Semicrystalline polyphenylsulfone and associated method of making and method of additive manufacturing

US11512169B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11512169-B2
Application numberUS-201916973893-A
CountryUS
Kind codeB2
Filing dateJun 26, 2019
Priority dateJun 27, 2018
Publication dateNov 29, 2022
Grant dateNov 29, 2022

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Abstract

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A semicrystalline polyphenylsulfone, has the structure Formula (I) wherein n and R are defined herein. The semicrystalline polyphenylsulfone, which exhibits a crystalline melting point in a range of 215 to 270° C., can be prepared from amorphous polyphenylsulfone using a solvent-induced crystallization method. An additive manufacturing method utilizing particles of the semicrystalline polyphenylsulfone is described.

First claim

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The invention claimed is: 1. A semicrystalline polyphenylsulfone, wherein the semicrystalline polyphenylsulfone has the structure wherein n is, on average, 30 to 200, and each occurrence of R is independently C 1 -C 18 alkyl or C 6 -C 18 aryl; and wherein the semicrystalline polyphenylsulfone exhibits a crystalline melting point in a range of 215 to 270° C., determined according to ASTM D3418-15 by differential scanning calorimetry using a heating rate of 20° C./minute, wherein the semicrystalline polyphenylsulfone is produced by a method comprising: combining a solvent mixture with an amorphous polyphenylsulfone powder in a weight ratio of 1:1 to 100:1, respectively, to form a mixture; wherein the solvent mixture comprises a solvent for the polyphenylsulfone and a non-solvent for the polyphenylsulfone in a weight ratio of 0.5:1 to 10:1, respectively; agitating the mixture for a time of 5 to 500 minutes and at a temperature of 10 to 50° C. to form a dispersion of semicrystalline polyphenylsulfone particles; and isolating the semicrystalline polyphenylsulfone particles from the dispersion. 2. The semicrystalline polyphenylsulfone of claim 1 , wherein a molten polyphenylsulfone obtained on melting the semicrystalline polyphenylsulfone exhibits a zero-shear viscosity in a range of 10 to 10 4 Pascal-second determined according to ASTM D4440-15 at a temperature of 380° C. 3. Particles comprising the semicrystalline polyphenylsulfone of claim 1 , wherein the particles have a volume-based equivalent spherical diameter (Dv50) of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1, or the particles have a Dv50 value of 45 to 80 micrometers and a Dv10 value of 1 to 45 micrometers and a Dv90 value of 80 to 125 micrometers determined by laser diffraction according to ISO 13320-1. 4. The semicrystalline polyphenylsulfone of claim 1 , exhibiting two crystalline melting points in the range of 215 to 270° C. 5. The semicrystalline polyphenylsulfone of claim 1 , wherein each occurrence of R is methyl; a molten polyphenylsulfone obtained on melting the semicrystalline polyphenylsulfone exhibits a zero-shear viscosity of 10 to 10 4 Pascal-second determined according to ASTM D4440-15 at a temperature of 380° C.; the semicrystalline polyphenylsulfone is in the form of particles having a volume-based equivalent spherical diameter of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1; and the semicrystalline polyphenylsulfone has a hydroxyl end group content greater than 0 and less than 50 parts per million by weight, based on the weight of the semicrystalline polyphenylsulfone. 6. A method of forming a semicrystalline polyphenylsulfone, the method comprising: combining a solvent mixture with an amorphous polyphenylsulfone powder in a weight ratio of 1:1 to 100:1, respectively, to form a mixture; wherein the solvent mixture comprises a solvent for the polyphenylsulfone and a non-solvent for the polyphenylsulfone in a weight ratio of 0.5:1 to 10:1, respectively; agitating the mixture for a time of 5 to 500 minutes and at a temperature of 10 to 50° C. to form a dispersion of semicrystalline polyphenylsulfone particles; and isolating the semicrystalline polyphenylsulfone particles from the dispersion. 7. The method of claim 6 , wherein the amorphous polyphenylsulfone powder has a volume-based equivalent spherical diameter of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1. 8. The method of claim 6 , wherein the isolated semicrystalline polyphenylsulfone particles have a volume-based equivalent spherical diameter of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1. 9. The method of claim 6 , wherein the solvent for the polyphenylsulfone is characterized by a polarity of 4 to 8, and a boiling point at atmospheric pressure of 60 to 190° C.; and the non-solvent for the polyphenylsulfone is selected from the group consisting of C 1 -C 6 alcohols, C 3 -C 6 ketones, and combinations thereof. 10. The method of claim 6 , wherein the solvent for the polyphenylsulfone is selected from the group consisting of dimethylacetamide, dimethylformamide, tetrahydrofuran, pyridine, N-methyl-2-pyrrolidone, and combinations thereof. 11. The method of claim 6 , wherein the non-solvent for the polyphenylsulfone is selected from the group consisting of C 1 -C 6 alcohols and combinations thereof. 12. The method of claim 6 , wherein the amorphous polyphenylsulfone powder has a volume-based equivalent spherical diameter of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1; wherein the solvent mixture and the amorphous polyphenylsulfone powder are combined in a weight ratio of 2:1 to 40:1; wherein the solvent mixture comprises the solvent for the polyphenylsulfone and the non-solvent for the polyphenylsulfone in a weight ratio of 0.7:1 to 3:1, respectively; wherein the solvent for the polyphenylsulfone is selected from the group consisting of dimethylacetamide, dimethylformamide, tetrahydrofuran, pyridine, N-methyl-2-pyrrolidone, and combinations thereof; wherein the non-solvent for the polyphenylsulfone comprises methanol; and wherein the isolated semicrystalline polyphenylsulfone particles have a volume-based equivalent spherical diameter of 10 to 400 micrometers, determined by laser diffraction according to ISO 13320-1. 13. A method of additive manufacturing, the method comprising: depositing a first layer comprising the semicrystalline polyphenylsulfone particles of claim 3 at a working area; irradiating the working area with first radiation effective to heat the first layer to a temperature below and within 10° C. of a crystalline melting onset temperature of the semicrystalline polyphenylsulfone particles; and selectively irradiating a portion of the working area with second radiation effective to heat the first layer to a temperature above a crystalline melting point of the semicrystalline polyphenylsulfone particles. 14. The method of claim 13 , wherein the second radiation comprises laser radiation at a wavelength of 10.6 micrometers. 15. The method of claim 13 , wherein each occurrence of R is methyl; and the irradiating the working area with second radiation produces molten polyphenylsulfone exhibiting a zero-shear viscosity of 10 to 10 4 Pascal-second determined according to ASTM D4440-15 at a temperature of 380° C.

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Inventors

Classifications

  • Polysulfones; Polyethersulfones · CPC title

  • from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group · CPC title

  • Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule · CPC title

  • PSU, i.e. polysulfones; PES, i.e. polyethersulfones or derivatives thereof · CPC title

  • C08G75/23Primary

    Polyethersulfones · CPC title

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What does patent US11512169B2 cover?
A semicrystalline polyphenylsulfone, has the structure Formula (I) wherein n and R are defined herein. The semicrystalline polyphenylsulfone, which exhibits a crystalline melting point in a range of 215 to 270° C., can be prepared from amorphous polyphenylsulfone using a solvent-induced crystallization method. An additive manufacturing method utilizing particles of the semicrystalline polypheny…
Who is the assignee on this patent?
Shpp Global Tech Bv
What technology area does this patent fall under?
Primary CPC classification C08G75/23. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 29 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).