METHOD FOR PRODUCING InP QUANTUM DOT PRECURSOR AND METHOD FOR PRODUCING InP-BASED QUANTUM DOT
US-2022195299-A1 · Jun 23, 2022 · US
Process for producing silyl phosphine compound and silyl phosphine compound
US11512103B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11512103-B2 |
| Application number | US-202117161032-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2021 |
| Priority date | Sep 29, 2016 |
| Publication date | Nov 29, 2022 |
| Grant date | Nov 29, 2022 |
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Abstract
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The silyl phosphine compound is represented by the following general formula (1). A content of a compound represented by the following general formula (2) is not more than 0.3 mol %. In the general formula (1), each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. In the general formula (2), R is the same as in the general formula (1).
First claim
Opening claim text (preview).
The invention claimed is: 1. A tris(trimethylsilyl)phosphine compound represented by the following general formula (1), wherein a content of a compound represented by the following general formula (2) is from 0.15 mol % to 0.3 mol %, wherein each R is methyl group, wherein R is the same as in the general formula (1). 2. The tris(trimethylsilyl)phosphine compound according to claim 1 , wherein a content of a compound represented by the following general formula (3) is more than 0.05 mol % and not more than 0.1 mol %, wherein R is the same as in the general formula (1). 3. The tris(trimethylsilyl)phosphine compound according to claim 1 , wherein a content of a compound represented by the following general formula (4) is 0.08 mol % to 0.5 mol %, wherein R is the same as in the general formula (1). 4. The tris(trimethylsilyl)phosphine compound according to claim 1 , wherein a content of a compound represented by the following general formula (5) is not more than 0.05 mol %, wherein R is the same as in the general formula (1). 5. The tris(trimethylsilyl)phosphine compound according to claim 1 , wherein a content of a compound represented by the following general formula (6) is not more than 0.05 mol %, wherein R is the same as in the general formula (1). 6. The tris(trimethylsilyl)phosphine compound according to claim 1 , wherein a content of a compound represented by the following general formula (7) is from 0.10 mol % to 0.2 mol %, wherein R is the same as in the general formula (1). 7. The tris(trimethylsilyl)phosphine compound according to claim 1 , being present in a state of being dispersed in an organic solvent. 8. The tris(trimethylsilyl)phosphine compound according to claim 1 for preparing indium phosphide.
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- What does patent US11512103B2 cover?
- The silyl phosphine compound is represented by the following general formula (1). A content of a compound represented by the following general formula (2) is not more than 0.3 mol %. In the general formula (1), each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. In the general f…
- Who is the assignee on this patent?
- Nippon Chemical Ind
- What technology area does this patent fall under?
- Primary CPC classification C07F9/062. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 29 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).