Silicon wafer forming method

Patent metadata

Field	Value
Publication number	US-11511374-B2
Application number	US-201816046477-A
Country	US
Kind code	B2
Filing date	Jul 26, 2018
Priority date	Aug 4, 2017
Publication date	Nov 29, 2022
Grant date	Nov 29, 2022

Abstract

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

First claim

What is claimed is:

1. A silicon wafer forming method for forming a silicon wafer from a silicon ingot, the method comprising:
a block ingot forming step of cutting the silicon ingot to form a block ingot having a first end face and a second end face;
a resin layer coating step of coating the second end face of the block ingot with a resin to form a resin layer on the second end face;
a planarizing step of grinding the first end face of the block ingot to planarize the first end face;
a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned inside of the block ingot at a depth from the first end face of the block ingot that is between the first end face and the second end face coated with resin to form a separation layer, the depth corresponding to the thickness of the wafer to be formed; and
a wafer forming step of separating the silicon wafer to be formed from the separation layer, after the separation layer forming step is performed, by immersing the block ingot in a liquid and generating an ultrasonic vibration.

2. The silicon wafer forming method according to claim 1 , further comprising:
a crystal orientation forming step of forming the silicon ingot with an orientation flat or a notch indicative of crystal orientation, before the block ingot forming step.

3. The silicon wafer forming method according to claim 1 , further comprising:
a production history forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the silicon wafer to be formed, with a focal point of the laser beam positioned in the inside of the silicon wafer to be formed in a region not to be formed with devices, to form a production history.

4. The silicon wafer forming method according to claim 3 , wherein the production history formed in the production history forming step includes one of lot number of the block ingot, order of the wafer to be formed, date of production, production facility, and machine model contributing to the forming.

5. The silicon wafer forming method according to claim 1 , wherein the resin layer coating step includes applying a resin to a base member and placing the base member against the second end face of the block ingot so that a solid resin layer is formed between the base member and the second end face of the block ingot, and removing the base member so that the solid resin layer remains on the second end face of the block ingot.

6. The silicon wafer forming method according to claim 5 , further comprising a peeling step of peeling the base member from the resin layer.

7. A silicon wafer forming method for forming a silicon wafer from a silicon ingot, the method comprising:
a block ingot forming step of cutting the silicon ingot to form a block ingot having a first end face and a second end face;
a fixing step of fixing the second face of the block ingot to a chuck table using an adhesive and transporting the block ingot on the chuck table between different processes;
a planarizing step of grinding the first end face of the block ingot to planarize the first end face;
a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned inside of the block ingot at a depth from the first end face of the block ingot that is between the first end face and the second end face to form a separation layer, the depth corresponding to the thickness of the wafer to be formed; and
a wafer forming step of separating the silicon wafer to be formed from the separation layer, after the separation layer forming step is performed, by immersing the block ingot in a liquid, applying ultrasonic vibration to the block ingot and applying suction to remove each wafer from the block ingot.

8. The silicon wafer forming method according to claim 7 , wherein the fixing step includes fixing the second end face of the block ingot to different chuck tables using an adhesive, a different one of the chuck tables being used in the planarizing step, the separation layer forming step and the wafer forming step.

Assignees

• Disco Corp

Inventors

• Sekiya Kazuma

Classifications

• H10W46/401

  for identification or tracking · CPC title

• H10W46/00

  Marks applied to devices, e.g. for alignment or identification · CPC title

• B23K26/0006

  taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence) · CPC title

• C30B29/06

  Silicon · CPC title

• B23K2103/50

  Inorganic materials other than metals or composite materials · CPC title