Control of trion density in carbon nanotubes for electro-optical and opto-electric devices

Patent metadata

Field	Value
Publication number	US-11508462-B2
Application number	US-201816222704-A
Country	US
Kind code	B2
Filing date	Dec 17, 2018
Priority date	Dec 15, 2017
Publication date	Nov 22, 2022
Grant date	Nov 22, 2022

Abstract

An optoelectronic system can include a single walled carbon nanotube (SWNT) device. The SWNT can include a carrier-doping density with optical conditions that control trion formation that respond via optical, electrical, or magnetic stimuli. The carrier-doping density can include a hole-polaron or electron-polaron concentration.

First claim

What is claimed is:

1. An optoelectronic system comprising:
a single walled carbon nanotube (SWNT) device, the SWNT device comprising a SWNT with a carrier-doping density; and
a stimuli generator capable of generating an optical, electrical, or magnetic stimuli, wherein the stimuli is capable of control of trion formation.

2. The optoelectronic system of claim 1 wherein the carrier-doping density comprises a hole-polaron or electron-polaron concentration.

3. The optoelectronic system of claim 2 , wherein the hole-polaron or electron-polaron concentration is in a range of about 6.1 to about 14.3 (100 nm) −1 .

4. The optoelectronic system of claim 1 , wherein the trion formation is characterized by a trion response to a magnetic field.

5. The optoelectronic system of claim 1 , wherein the trion formation is characterized by a trion response to an electrical input.

6. The optoelectronic system of claim 1 , wherein the trion formation is characterized by a trion response to an optical input.

7. The optoelectronic system of claim 1 , wherein the trion formation is characterized by a trion migration rate to an electrode.

8. The optoelectronic system of claim 1 , wherein the trion formation is characterized by a SWNT trion transient absorptive signature (Tr + 11 →Tr + nm or Tr − 11 →Tr − nm ).

9. The optoelectronic system of claim 1 , wherein the SWNT device includes photogenerated free-carriers, wherein the photogenerated free-carriers are quantified according to

N

Tr
+

/

-
11

2
⁢

N
Ex

,

where N Ex is an exciton density (per 100 nm) produced following E 00 →E nm excitation, and N Tr+/−11 represents a maximum trion density following optical excitation, reflecting a combined N Tr+11 and N Tr−11 positive and negative trion densities.

10. The optoelectronic system of claim 9 , wherein N Tr+/−11 is calculated using A=σ Tr lC SWNT N A L SWNT N Tr+/−11 , where A is the absorbance corresponding to the Tr +/−11 →Tr +/−nm transition, σTr is the absorption cross section associated with the Tr +/−11 →Tr +i−nm transition, l is an optical path length of a spectral cuvette, C SWNT is a SWNT molar concentration, NA is the Avogadro constant, and L SWNT is an average length of the SWNTs used for the SWNT device.

Assignees

• Univ Duke

Inventors

• Therien Michael
• Bai Yusong
• Olivier Jean-Hubert
• Bullard George

Classifications

• C01B2202/30

  Purity · CPC title

• C01B2202/02

  Single-walled nanotubes · CPC title

• C01B32/17

  Purification · CPC title

• G06F17/13

  Differential equations (using digital differential analysers G06F7/64) · CPC title

• G16C10/00 Primary

  Computational theoretical chemistry, i.e. ICT specially adapted for theoretical aspects of quantum chemistry, molecular mechanics, molecular dynamics or the like · CPC title