Multi-piece mono-layer radiation detector

Patent metadata

Field	Value
Publication number	US-11506802-B2
Application number	US-201917274258-A
Country	US
Kind code	B2
Filing date	Sep 10, 2019
Priority date	Sep 10, 2018
Publication date	Nov 22, 2022
Grant date	Nov 22, 2022

Abstract

The present invention relates to a radiation detector ( 100 ) comprising: i) a substrate ( 110 ); ii) a sensor, which is coupled to the substrate, the sensor comprising a first array ( 120 ) of sensor pixels, a second array ( 130 ) of signal read-out elements, and an electronic circuitry which is configured to provide image data based on signals received from the signal read-out elements; iii) a transducer, which is coupled to the substrate and to the sensor, the transducer comprising a third array ( 140 ) of subpixels, wherein at least two subpixels are assigned to one sensor pixel; wherein the second array of signal read-out elements and the third array of subpixels correspond to each other; wherein each of the subpixels comprises a radiation conversion material.

First claim

The invention claimed is:

1. A radiation detector, comprising:
a substrate;
a sensor coupled to the substrate, the sensor comprising:
a first array of sensor pixels;
a second array of signal read-out elements; and
electronic circuitry configured to provide image data based on signals received from the signal read-out elements;

a transducer coupled to the substrate and to the sensor, the transducer comprising:
a third array of subpixels, wherein at least two subpixels of the third array of subpixels are assigned to one sensor pixel of the first array of the sensor pixels, and wherein each of the subpixels comprises a radiation conversion material,

wherein the radiation conversion material of each of the subpixels includes at least one photoconductor, and
wherein a composition of the at least one photoconductor of the subpixels is varied between the at least two subpixels assigned to the one sensor pixel of the first array of the sensor pixels in at least one of 1) a doping level of the at least one photoconductor, 2) a doping material of the at least one photoconductor, and 3) a combination of doping materials of the at least one photoconductor.

2. The radiation detector according to claim 1 , wherein at least one of the signal read-out elements is a photodiode and the radiation conversion material of each of the subpixels includes a scintillator; wherein a composition of the radiation conversion material and/or a thickness of the radiation conversion material is varied between the at least two subpixels assigned to one sensor pixel of the first array of the sensor pixels.

3. The radiation detector according to claim 2 , wherein the composition of the radiation conversion material to be varied between the at least two subpixels assigned to one sensor pixel is at least one of a doping level of the radiation conversion material, a doping material, and a combination of doping materials.

4. The radiation detector according to claim 2 , wherein the radiation conversion material is caesium iodide, optionally doped with thallium, lutetium iodide, optionally doped with cerium, gadolinium oxysulfide, optionally doped with terbium or optionally doped with praseodymium, calcium tungstate, lutetium-yttrium oxyorthosilicate, sodium iodide, zinc sulfide, lutetium gadolinium gallium garnet, yttrium aluminum garnet, or bismuth germanium oxide.

5. The radiation detector according to claim 1 , wherein at least one of the signal read-out elements is a conductive electrode, and wherein a thickness of the photoconductor is varied between the at least two subpixels assigned to one sensor pixel.

6. The radiation detector according to claim 5 , wherein the photoconductor is at least one of amorphous selenium, cadmium zinc telluride, cadmium telluride, perovskite, gallium arsenide, mercury(II)iodide, lead(II) oxide, thallium(I) bromide, and inorganic photoconductor nanoparticles embedded in an organic matrix.

7. The radiation detector according to claim 1 , wherein the at least two subpixels assigned to one sensor pixel are at least one of a different dimension, a different size, different distance gaps, a different radiation conversion materials, and a different material composition between the subpixels.

8. The radiation detector according to claim 1 , wherein the third array comprises a non-uniform distribution of at least one of the different dimension of the subpixels, the different size of the subpixels, the different distance gaps, the different radiation conversion materials of the subpixels, and the different material composition between the subpixels.

9. The radiation detector according to claim 1 , wherein at least one of the first array of sensor pixels, the second array of signal read-out elements, and the third array of subpixels is a two-dimensional array.

10. The radiation detector according to claim 1 , wherein at least one of the first array of sensor pixels, the second array of signal read-out elements, and the third array of subpixels is a one-dimensional array.

11. The radiation detector according to claim 1 , wherein at least one of the second array of signal read-out elements and the third array of subpixels define a subarray scheme of the first array of sensor pixels.

12. The radiation detector according to claim 1 , wherein at least one of the second array of signal read-out elements and the third array of subpixels are configured to provide at least one of a spatial resolution, a spectral energy resolution, a dynamic range, and a spectral energy range.

13. The radiation detector according to claim 1 , wherein the substrate comprises a substantially flat shape or a substantially curved shape.

14. The radiation detector according to claim 1 , wherein the substrate comprises at least one of silicon, glass, and a polymer foil.

Assignees

• Koninklijke Philips Nv

Inventors

• Jacobs Johannes Wilhelmus Maria
• Behling Rolf Karl Otto
• Steadman Booker Roger
• Vogtmeier Gereon
• Wimmers Onno Jan

Classifications

• G01T1/2985

  In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); (using external radiation sources A61B6/02) · CPC title

• G01T1/2928

  using solid state detectors · CPC title

• G01T1/24

  with semiconductor detectors · CPC title

• G01T1/242

  Stacked detectors, e.g. for depth information (constructional or manufacturing details H10W90/00) · CPC title

• G01T1/20184

  Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits · CPC title