Oscillator

Patent metadata

Field	Value
Publication number	US-11496095-B2
Application number	US-202117510152-A
Country	US
Kind code	B2
Filing date	Oct 25, 2021
Priority date	Oct 29, 2020
Publication date	Nov 8, 2022
Grant date	Nov 8, 2022

Abstract

An oscillator oscillating a tera hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

First claim

What is claimed is:

1. An oscillator oscillating a tera hertz wave, the oscillator comprising: a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and a resonator including a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor, wherein the negative resistive element is disposed between the first conductor and the second conductor, a layer is disposed between the negative resistive element and the dielectric, the layer is a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, the first semiconductor layer, the active layer, and the second semiconductor layer are laminated in a first direction, and the layer has a film thickness of 1 nm or more and 500 nm or less in a second direction orthogonal to the first direction.

2. The oscillator according to claim 1 , wherein the layer is an amorphous layer.

3. The oscillator according to claim 1 , wherein the layer contains an element forming the negative resistive element.

4. The oscillator according to claim 1 , wherein the negative resistive element is surrounded by the dielectric.

5. The oscillator according to claim 1 , wherein the negative resistive element has a mesa structure, and the layer is disposed on a side wall of the mesa structure.

6. The oscillator according to claim 1 , wherein the layer includes a first layer disposed between the first semiconductor layer and the dielectric or between the second semiconductor layer and the dielectric, and a second layer disposed between the active layer and the dielectric.

7. The oscillator according to claim 1 , wherein an element contained in the layer is one of In, Ga, As, and P.

8. The oscillator according to claim 1 , wherein the resonator is a microstrip resonator including a patch antenna.

9. An oscillator oscillating a tera hertz wave, the oscillator comprising: a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and a resonator including a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor, wherein the negative resistive element is disposed between the first conductor and the second conductor, a layer is disposed between the negative resistive element and the dielectric, the layer is an amorphous layer the first semiconductor layer, the active layer, and the second semiconductor layer are laminated in a first direction, and the layer has a film thickness of 1 nm or more and 500 nm or less in a second direction orthogonal to the first direction.

10. The oscillator according to claim 9 , wherein the layer has a higher resistivity than the first semiconductor layer or the second semiconductor layer.

11. The oscillator according to claim 9 , wherein the layer contains an element forming the negative resistive element.

12. The oscillator according to claim 9 , wherein the negative resistive element is surrounded by the dielectric.

13. The oscillator according to claim 9 , wherein the negative resistive element has a mesa structure, and the layer is disposed on a side wall of the mesa structure.

14. The oscillator according to claim 1 , wherein the layer has a film thickness of 5 nm or more and 200 nm or less in the second direction.

15. The oscillator according to claim 9 , wherein the layer has a film thickness of 5 nm or more and 200 nm or less in the second direction.

16. The oscillator according to claim 6 , wherein the first layer has a lower impedance than the second layer at an oscillation frequency of the oscillator.

17. The oscillator according to claim 14 , wherein the layer contains an element forming the negative resistive element.

18. The oscillator according to claim 9 , wherein an element contained in the layer is one of In, Ga, As, and P.

Assignees

• Canon Kk

Inventors

• Yoshioka Toshifumi
• Koyama Yasushi

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H03B7/08

  being a tunnel diode · CPC title

• H03B7/14 Primary

  active element being semiconductor device · CPC title

• H03B2200/0084

  dedicated to Terahertz frequencies · CPC title

• H01L29/205

  Electricity · mapped topic