Organic light emitting diode display device and method of manufacturing organic light emitting diode display device

Patent metadata

Field	Value
Publication number	US-11495652-B2
Application number	US-201916722632-A
Country	US
Kind code	B2
Filing date	Dec 20, 2019
Priority date	Jan 28, 2019
Publication date	Nov 8, 2022
Grant date	Nov 8, 2022

Abstract

An organic light emitting diode display device includes a substrate, a driving transistor, a switching transistor, a first light absorbing layer, an organic insulating layer, and a sub-pixel structure. The substrate includes a first region and a second region. The driving transistor is disposed in the first region on the substrate. The switching transistor is disposed in the second region on the substrate, and includes a metal-oxide-based semiconductor. The first light absorbing layer is disposed on the driving and switching transistors. The organic insulating layer is disposed directly on the first light absorbing layer. The sub-pixel structure is disposed on the organic insulating layer.

First claim

What is claimed is:

1. An organic light emitting diode display device comprising:
a substrate, a first region and a second region;
a driving transistor disposed in the first region on the substrate and including:
a first active layer including a first channel region;
a first gate electrode overlapping the first channel region and on the first active layer;
a first source or drain electrode disposed on the first gate electrode;

a switching transistor disposed in the second region on the substrate and including:
a second active layer including a second channel region;
a second gate electrode overlapping the second channel region and on the second active layer;
a second source or drain electrode disposed on the second gate electrode;

a continuous planarization layer disposed on and covering a top surface of each of the first source or drain electrode and the second source or drain electrode facing away from the substrate;
a first light absorbing layer disposed on the planarization layer;
an organic insulating layer disposed directly on the first light absorbing layer;
a sub-pixel structure disposed on the organic insulating layer and including:
a lower electrode;
a light emitting layer disposed on the lower electrode; and
an upper electrode disposed on the light emitting layer;

a pixel defining layer disposed between the organic insulating layer and the upper electrode and covering both lateral portions of the lower electrode;
a connection pattern disposed between the planarization layer and the first light absorbing layer,
wherein the organic insulating layer transmit light incident thereon therethrough the organic insulating layer,
wherein the first active layer includes a silicon-based semiconductor, and the second active layer includes a metal-oxide-based semiconductor, and
wherein the first active layer, the second active layer, the first gate electrode, and the second gate electrode are disposed on different layers to each other, and the first source or drain electrode and the second source or drain electrode are disposed on a same layer.

2. The organic light emitting diode display device of claim 1 , wherein each of the driving and switching transistors has a top gate structure.

3. The organic light emitting diode display device of claim 1 , further comprising:
an insulating pattern disposed between the second active layer and the second gate electrode.

4. The organic light emitting diode display device of claim 1 , further comprising:
a first gate insulating layer disposed on the substrate to cover the first active layer in the first region; and
a second gate insulating layer disposed on the first gate insulating layer to cover the first gate electrode in the first region.

5. The organic light emitting diode display device of claim 4 , wherein the driving transistor further includes a gate electrode pattern overlapping the first gate electrode on the second gate insulating layer.

6. The organic light emitting diode display device of claim 5 , further comprising:
a first insulating interlayer disposed on the second gate insulating layer to cover the gate electrode pattern in the first region; and
a second insulating interlayer disposed on the first insulating interlayer to cover the second active layer and the second gate electrode in the second region.

7. The organic light emitting diode display device of claim 6 , wherein the first source or drain electrode and the second source or drain electrode are disposed on the second insulating interlayer.

8. The organic light emitting diode display device of claim 1 , further comprising:
a protective insulating layer disposed on the first source or drain electrode and the second source or drain electrode and disposed under the planarization layer; and
a second light absorbing layer disposed between the protective insulating layer and the planarization layer.

9. The organic light emitting diode display device of claim 1 , wherein the substrate includes:
a first organic layer;
a barrier layer disposed on the first organic layer; and
a second organic layer disposed on the barrier layer.

10. The organic light emitting diode display device of claim 9 , further comprising:
a buffer layer disposed on the substrate between the substrate and the driving and switching transistors.

11. The organic light emitting diode display device of claim 1 , further comprising:
a thin film encapsulation structure disposed on the sub-pixel structure,
wherein the thin film encapsulation structure includes:
a first thin film encapsulation layer including a flexible inorganic material;
a second thin film encapsulation layer disposed on the first thin film encapsulation layer and including a flexible organic material; and
a third thin film encapsulation layer disposed on the second thin film encapsulation layer and including a flexible inorganic material.

Assignees

• Samsung Display Co Ltd

Inventors

• Lee Junhee
• Kim Dongwon
• Kim Deokhoi
• Bae Injun
• Lee Hyemin
• Kim Jihee

Classifications

• G09G2300/0426

  Layout of electrodes and connections · CPC title

• G09G3/3266

  Details of drivers for scan electrodes · CPC title

• G09G2300/0439

  Pixel structures · CPC title

• G09G3/3233

  with pixel circuitry controlling the current through the light-emitting element · CPC title

• H01L2227/323

  Electricity · mapped topic