Radio frequency filtering circuitry on integrated passive die

Patent metadata

Field	Value
Publication number	US-11489506-B2
Application number	US-202017079240-A
Country	US
Kind code	B2
Filing date	Oct 23, 2020
Priority date	Oct 24, 2019
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

An integrated passive die includes a substrate, an input node, an output node, and RF filtering circuitry. The RF filtering circuitry includes a number of LC tank circuits coupled between the input node and the output node. Each one of the LC tank circuits include an inductor and a capacitor. The inductor is formed by a metal trace over the substrate. The capacitor is coupled in parallel with the inductor over the substrate. The inductor and the capacitor are provided such that a resonance frequency of the combination of the inductor and the capacitor is less than a self-resonance frequency of the inductor.

First claim

What is claimed is:

1. An integrated passive die comprising:
a substrate;
an input node and an output node; and
radio frequency (RF) filtering circuitry comprising a plurality of LC tank circuits coupled between the input node and the output node, each one of the plurality of LC tank circuits comprising:
an inductor comprising a metal trace over the substrate; and
a capacitor coupled in parallel with the inductor over the substrate, wherein a resonance frequency of the combination of the inductor and the capacitor is less than a self-resonance frequency of the inductor;

wherein a total area of the integrated passive die is less than 20 cm 2 .

2. The integrated passive die of claim 1 wherein:
the substrate is divided into a first portion and a second portion across a horizontal axis; and
a location of each one of the plurality of LC tank circuits is alternated between the first portion and the second portion of the substrate based on the order in which they are coupled between the input node and the output node.

3. The integrated passive die of claim 2 wherein an insertion loss of the RF filtering circuitry is less than 5 dB.

4. The integrated passive die of claim 1 wherein for each one of the plurality of LC tank circuits the inductor is an integrated passive device.

5. The integrated passive die of claim 1 wherein the integrated passive die comprises at least seven LC tank circuits.

6. The integrated passive die of claim 1 wherein for at least one of the plurality of LC tank circuits:
the metal trace of the inductor forms a loop between a first inductor node and a second inductor node; and
the capacitor is coupled across a gap between the first inductor node and the second inductor node such that the capacitor and the metal trace form a closed loop.

7. The integrated passive die of claim 6 wherein for the at least one of the plurality of LC tank circuits the gap is less than 0.5 cm.

8. The integrated passive die of claim 1 wherein for at least one of the plurality of LC tank circuits the inductor is an integrated passive device.

9. The integrated passive die of claim 1 wherein an insertion loss of the RF filtering circuitry is less than 5 dB.

10. The integrated passive die of claim 9 wherein the integrated passive die comprises at least seven LC tank circuits.

11. The integrated passive die of claim 10 wherein for at least one of the plurality of LC tank circuits:
the metal trace of the inductor forms a loop between a first inductor node and a second inductor node; and
the capacitor is coupled across a gap between the first inductor node and the second inductor node such that the capacitor and the metal trace form a closed loop.

12. The integrated passive die of claim 11 wherein for the at least one of the plurality of LC tank circuits the gap is less than 0.5 cm.

13. The integrated passive die of claim 1 wherein for at least one of the plurality of LC tank circuits:
the metal trace of the inductor forms a loop between a first inductor node and a second inductor node; and
the capacitor is coupled across a gap between the first inductor node and the second inductor node such that the capacitor and the metal trace form a closed loop.

14. The integrated passive die of claim 13 wherein for the at least one of the plurality of LC tank circuits the gap is less than 0.5 cm.

15. The integrated passive die of claim 1 wherein the substrate is one of silicon, sapphire, and glass.

Assignees

• Qorvo Us Inc

Inventors

• Wright Peter V

Classifications

• H03H7/1766

  Parallel LC in series path (H03H7/1783 takes precedence) · CPC title

• H03H2001/0085

  Multilayer, e.g. LTCC, HTCC, green sheets · CPC title

• H03H7/175

  Series LC in series path (H03H7/1783 takes precedence) · CPC title

• H03H7/1775

  Parallel LC in shunt or branch path (H03H7/1791 takes precedence) · CPC title

• H03H7/0115 Primary

  comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence) · CPC title