Light-emitting device, light-emitting apparatus, electronic device, and lighting device

Patent metadata

Field	Value
Publication number	US-11489133-B2
Application number	US-202016897709-A
Country	US
Kind code	B2
Filing date	Jun 10, 2020
Priority date	Jun 14, 2019
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with along lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

First claim

What is claimed is:

1. A light-emitting device comprising:
an anode;
a cathode; and
an EL layer between the anode and the cathode,
wherein the EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer,
wherein the hole-injection layer is positioned between the anode and the light-emitting layer,
wherein the electron-transport layer is positioned between the light-emitting layer and the cathode,
wherein the hole-injection layer contains a first substance and a second substance,
wherein the first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV,
wherein the second substance exhibits an electron-accepting property with respect to the first substance, and
wherein the electron-transport layer contains a material whose resistance decreases with current flowing therethrough.

2. The light-emitting device according to claim 1 ,
wherein the material whose resistance decreases with current flowing therethrough contains an organometallic complex of an alkali metal or an alkaline earth metal.

3. The light-emitting device according to claim 1 ,
wherein the material whose resistance decreases with current flowing therethrough contains an organic compound having an electron-transport property and an organometallic complex of an alkali metal or an alkaline earth metal.

4. The light-emitting device according to claim 2 ,
wherein the organometallic complex of an alkali metal or an alkaline earth metal forms a cluster.

5. The light-emitting device according to claim 2 ,
wherein the organometallic complex of an alkali metal or an alkaline earth metal is a metal complex including a ligand containing nitrogen and oxygen and an alkali metal or an alkaline earth metal.

6. The light-emitting device according to claim 2 ,
wherein the organometallic complex of an alkali metal or an alkaline earth metal is a metal complex including a monovalent metal ion and a ligand having an 8-hydroxyquinolinato structure.

7. The light-emitting device according to claim 2 ,
wherein the organometallic complex of an alkali metal or an alkaline earth metal is a lithium complex including a ligand having an 8-hydroxyquinolinato structure.

8. The light-emitting device according to claim 2 ,
wherein the electron-transport layer includes a first layer and a second layer,
wherein the first layer is positioned between the light-emitting layer and the second layer,
wherein the second layer is positioned between the first layer and the cathode, and
wherein a concentration of the organometallic complex of an alkali metal or an alkaline earth metal in the first layer is different from that in the second layer.

9. The light-emitting device according to claim 8 ,
wherein the concentration of the organometallic complex of an alkali metal or an alkaline earth metal in the first layer is higher than that in the second layer.

10. The light-emitting device according to claim 1 ,
wherein the second substance is an organic compound.

11. The light-emitting device according to claim 1 ,
wherein the light-emitting layer contains a host material and a light-emitting substance, and
wherein the light-emitting substance emits blue fluorescence.

12. An electronic device comprising:
the light-emitting device according to claim 1 ; and
a sensor, an operation button, a speaker, or a microphone.

13. A light-emitting apparatus comprising:
the light-emitting device according to claim 1 ; and
a transistor or a substrate.

14. A lighting device comprising:
the light-emitting device according to claim 1 ; and
a housing.

Assignees

• Semiconductor Energy Lab

Inventors

• Seo Satoshi
• Seo Hiromi
• Suzuki Kunihiko
• Abe Kanta
• Iwaki Yuji
• Hashimoto Naoaki
• Suzuki Tsunenori

Classifications

• H01L51/5206

  Electricity · mapped topic

• H01L51/5221

  Electricity · mapped topic

• H01L51/5092

  Electricity · mapped topic

• H01L51/0079

  Electricity · mapped topic

• H01L51/5056

  Electricity · mapped topic