Magnetoresistive effect element and magnetic memory

Patent metadata

Field	Value
Publication number	US-11489109-B2
Application number	US-202016952274-A
Country	US
Kind code	B2
Filing date	Nov 19, 2020
Priority date	Feb 28, 2017
Publication date	Nov 1, 2022
Grant date	Nov 1, 2022

Abstract

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

First claim

The invention claimed is:

1. A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first free layer and the second free layer,
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other, and
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co, and Ni.

2. The magnetoresistive effect element according to claim 1 ,
wherein an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first free layer or the second free layer is less than or equal to 7%.

3. The magnetoresistive effect element according to claim 1 ,
wherein the magnetic coupling layer has an fcc structure or an hcp structure, and
each of the first free layer and the second free layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure.

4. A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first free layer and the second free layer,
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other, and
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
the magnetization free layer further includes a first interposed layer and a second interposed layer stacked between the first free layer and the magnetic coupling layer,
the first interposed layer is in contact with the first free layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

5. The magnetoresistive effect element according to claim 1 ,
wherein a thickness of the magnetic coupling layer is less than or equal to 1 nm.

6. A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first free layer and the second free layer,
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other, and
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
the magnetic coupling layer includes a first non-magnetic layer and a second non-magnetic layer that include Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni, and an intermediate non-magnetic layer formed of Ir or Ru and stacked between the first non-magnetic layer and the second non-magnetic layer.

7. The magnetoresistive effect element according to claim 1 ,
wherein at least one of the first free layer and the second free layer has a stack structure represented by [Co/Pt]n, [Co/Pd]n, or [Co/Ni]n.

8. The magnetoresistive effect element according to claim 1 , further comprising:
a spin orbit torque interconnect layer disposed such that a spin orbit torque is applied to the magnetization free layer.

9. A magnetic memory comprising:
the magnetoresistive effect element according to claim 1 as a storage element.

10. The magnetoresistive effect element according to claim 2 ,
wherein the magnetic coupling layer has an fcc structure or an hcp structure, and
each of the first free layer and the second free layer includes Co, Ni, or an alloy thereof, and has the fcc structure or the hcp structure.

11. A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first free layer and the second free layer,
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other, and
the magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co, and Ni,
an absolute value of a lattice mismatch ratio between the magnetic coupling layer and the first free layer or the second free layer is less than or equal to 7%,
the magnetization free layer further includes a first interposed layer and a second interposed layer stacked between the first free layer and the magnetic coupling layer,
the first interposed layer is in contact with the first free layer, and the second interposed layer is in contact with the first interposed layer and the magnetic coupling layer,
a main element of the magnetic coupling layer and the first interposed layer is Ir,
a main element of the second interposed layer is an element other than Ir,
a thickness of the first interposed layer is greater than or equal to 1.5 times and less than or equal to 3.2 times an atomic radius of Ir, and
a thickness of the second interposed layer is less than or equal to 1.5 times an atomic radius of the main element of the second interposed layer.

12. A magnetoresistive effect element comprising:
a magnetization fixed layer;
a magnetization free layer; and
a non-magnetic spacer layer stacked between the magnetization fixed layer and the magnetization free layer,
wherein the magnetization free layer includes a first free layer and a second free layer formed of a ferromagnetic material, and a magnetic coupling layer stacked between the first free layer and the second free layer,
the first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other, and
the magnetic coupling layer is a non-magn

Assignees

• Tdk Corp

Inventors

• SHIOKAWA Yohei
• Ota Minoru
• Sasaki Tomoyuki
• Tanaka Yoshitomo

Classifications

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G01R33/098

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title