Method of addressing an LED array with light intensity adaptive LED sidewalls

US11489095B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11489095-B2
Application numberUS-202016912496-A
CountryUS
Kind codeB2
Filing dateJun 25, 2020
Priority dateDec 21, 2017
Publication dateNov 1, 2022
Grant dateNov 1, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A first pixel with a first pixel sidewall is disclosed. A second pixel with a second pixel sidewall facing the first pixel sidewall is also disclosed. A first dynamic optical isolation material between the first pixel sidewall and the second pixel sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first pixel sidewall for a light emitted by one of the first pixel and the second pixel is determined by the optical state, is also disclosed.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method comprising: addressing a first contiguous group of pixels in an array of pixels causing pixels in the first group of pixels to emit light, each pixel in the array of pixels comprising a semiconductor light emitting structure and dynamic optical isolation material attached to sidewalls of each pixel, the dynamic optical isolation material switchable between a plurality of optical states based on a state trigger; and sending a state trigger to the dynamic optical isolation material located between two pixels in the first group of pixels causing the dynamic optical isolation material located between pixels in the first group of pixels to switch from a state that hinders transmission of light to a transparent state while dynamic optical isolation material located between two pixels of the array of pixels not in the first group of pixels remains in a state that hinders transmission of light. 2. The method of claim 1 comprising addressing a second contiguous group of pixels in the array of pixels causing the semiconductor light emitting structures of the pixels in the second group of pixels to emit light; and sending a state trigger to the dynamic optical isolation material located between two pixels in the second group of pixels causing the dynamic optical isolation material located between pixels in the second group of pixels to switch from a state that hinders transmission of light to a transparent state. 3. The method of claim 1 , wherein the dynamic optical isolation material is a thermochromic material and the state trigger is a change in a temperature of the dynamic optical isolation material. 4. The method of claim 3 , wherein the change in the temperature of the dynamic isolation material is caused by heat dissipated by a pixel adjacent to the dynamic optical isolation material. 5. The method of claim 1 , wherein the dynamic optical isolation material is a thermochromic material and the state trigger is heating the optical dynamic isolation material to a threshold temperature. 6. The method of claim 5 , wherein heating the dynamic isolation material to a threshold temperature is caused by a pixel adjacent to the dynamic optical isolation material. 7. The method of claim 5 , wherein heating the dynamic optical isolation material to a threshold temperature is caused by pixel to which the dynamic optical isolation material is attached. 8. The method of claim 5 , wherein heating the dynamic optical isolation material to a threshold temperature is caused by a pixel adjacent to the dynamic optical isolation material and a pixel to which the dynamic optical isolation material is attached. 9. The method of claim 1 , wherein the dynamic optical isolation material is a photochromic material and the state trigger a light-based trigger. 10. The method of claim 9 , wherein the light-based trigger is UV light. 11. The method of claim 1 , wherein the transparent state is at least 95% transparent. 12. A method comprising: addressing a first contiguous group of pixels in an array of pixels causing pixels in the first group of pixels to not emit light, each pixel in the array of pixels comprising a semiconductor light emitting structure and dynamic optical isolation material attached to sidewalls of each pixel, the dynamic optical isolation material switchable between a plurality of optical states based on a state trigger; and sending a state trigger to the dynamic optical isolation material located between two pixels in the first group of pixels causing the dynamic optical isolation material located between pixels in the first group of pixels to switch from a transparent state to a state that hinders transmission of light while dynamic optical isolation material located between two pixels of the array of pixels not in the first group of pixels remains in a transparent state. 13. The method of claim 12 , wherein the dynamic optical isolation material is a thermochromic material and the state trigger is a change in a temperature of the dynamic optical isolation material. 14. The method of claim 12 , wherein the dynamic optical isolation material is a thermochromic material and the state trigger is cooling the optical isolation material to a threshold temperature. 15. The method of claim 14 , wherein cooling the dynamic optical isolation material to a threshold temperature is caused by a pixel adjacent to the dynamic optical isolation material. 16. The method of claim 15 , wherein cooling the dynamic optical isolation material to a threshold temperature is caused by pixel to which the dynamic optical isolation material is attached. 17. The method of claim 15 , wherein cooling the dynamic optical isolation material to a threshold temperature is caused by a pixel adjacent to the dynamic optical isolation material and a pixel to which the dynamic optical isolation material is attached. 18. The method of claim 15 , wherein the dynamic optical isolation material is a photochromic material and the state trigger a light-based trigger. 19. The method of claim 18 , wherein the light-based trigger is UV light. 20. The method of claim 12 , wherein the transparent state is at least 95% transparent.

Assignees

Inventors

Classifications

  • H10W90/00Primary

    Package configurations · CPC title

  • transmissive · CPC title

  • Automatic dimming circuits, i.e. switching between high beam and low beam due to change of ambient light or light level in road traffic · CPC title

  • based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

  • the substrate is supporting also the light source · CPC title

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What does patent US11489095B2 cover?
A first pixel with a first pixel sidewall is disclosed. A second pixel with a second pixel sidewall facing the first pixel sidewall is also disclosed. A first dynamic optical isolation material between the first pixel sidewall and the second pixel sidewall and configured to change an optical state based on a state trigger such that a light behavior at the first pixel sidewall for a light emitte…
Who is the assignee on this patent?
Lumileds Llc
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 01 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).