Photoelectric conversion device and photoelectric conversion module
US-2018019360-A1 · Jan 18, 2018 · US
US11489014B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11489014-B2 |
| Application number | US-201716320932-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 27, 2017 |
| Priority date | Nov 22, 2017 |
| Publication date | Nov 1, 2022 |
| Grant date | Nov 1, 2022 |
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A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.
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What is claimed is: 1. A monolithic solar cell, comprising: a first solar cell that is a sequential stack, in the order recited, of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that comprises a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the p-type hole selective layer contacting and being integrated onto the interfacial layer in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer; and wherein the second solar cell is a sequential stack, in the order recited, of the p-type hole selective layer, the perovskite layer, an n-type electron selective layer, a transparent electrode layer, and a metal grid electrode layer; and wherein the second solar cell further comprises a protective oxide layer that is disposed between the n-type electron selective layer and the transparent electrode layer and is composed of zinc oxide, titanium dioxide, zirconium oxide, aluminum-doped zinc oxide, tin oxide, indium oxide, zinc tin oxide, niobium oxide, barium titanate, strontium titanate, tungsten oxide-titanium dioxide, or a mixture of two or more thereof. 2. The monolithic solar cell according to claim 1 , wherein the perovskite layer is a composite material comprising groups selected from the group consisting of a group of carbon compounds comprising a methylammonium ion (CH 3 NH 3 + , MA ion) and a formamidinium ion (HC(NH 2 ) 2 + , FA ion), a group of metals comprising cesium, rubidium, lead, and tin, an iodine group, a chloride group, a halide group, and combinations thereof, and is manufactured by a solution process, a vacuum process, or a combined process. 3. The monolithic solar cell according to claim 1 , wherein the p-type hole selective layer comprises NiO x , MoO x , V 2 O 5 , WO 3 , CuSCN or an oxide doped with at least one of Cu, Li, Mg, and Co. 4. The monolithic solar cell according to claim 1 , wherein the n-type electron selective layer comprises PCBM, C 60 , or a combination thereof and comprises an organic layer composed of BCP, PFN, LiF, or PEIE. 5. The monolithic solar cell according to claim 1 , wherein each of the recombination layer and the transparent electrode layer is a single layer comprising a material that is an oxide of indium, tin, zinc, and combinations thereof, aluminum zinc oxide, boron zinc oxide, or hydrogenated indium oxide, or that is selected from the group consisting of oxide-based nanoparticles, silver nanowires, carbon nanotubes, graphene, and PEDOT, or wherein each of the recombination layer and the transparent electrode layer is a composite layer wherein two or more materials of the materials form each layer of a double layer. 6. The monolithic solar cell according to claim 1 , wherein the metal grid electrode layer comprises a metal selected from the group consisting of silver, gold, aluminum, and nickel or an alloy of two or more thereof.
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