Method of fabricating a variable resistance memory device

Patent metadata

Field	Value
Publication number	US-11482670-B2
Application number	US-202016909218-A
Country	US
Kind code	B2
Filing date	Jun 23, 2020
Priority date	Oct 4, 2019
Publication date	Oct 25, 2022
Grant date	Oct 25, 2022

Abstract

A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.

First claim

What is claimed is:

1. A method of fabricating a variable resistance memory device, the method comprising:
forming a bottom electrode on a substrate;
forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode;
forming a variable resistance layer in the first trench; and
irradiating the variable resistance layer with a laser,
wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.

2. The method of claim 1 , wherein the variable resistance layer has a void,
wherein the void is removed when the variable resistance layer is irradiated by the laser.

3. The method of claim 1 , wherein the variable resistance layer includes a phase change material.

4. The method of claim 3 , wherein the phase change material includes a compound including of Te or Se combined with Ge, Sb, Bi, Pb, Sn, Ag, As, S, Si, In, Ti, Ga, P, O, or C.

5. The method of claim 1 , wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 18 μs.

6. The method of claim 1 , wherein the laser is a solid laser.

7. The method of claim 6 , Wherein the solid laser is an yttrium-aluminum-garnet (YAG) laser.

8. The method of claim 1 , wherein an energy density of the laser is about 0.1 J/cm 2 to about 4 J/cm 2 .

9. The method of claim 1 , wherein a wavelength of the laser is about 250 nm to about 1000 nm.

10. The method of claim 1 , wherein a frequency of the laser is about 5 Hz to about 10,000 Hz.

11. The method of claim 1 , wherein a power of the laser is about 0.1 kW to about 4,000 kW.

12. The method of claim 1 , wherein the laser radiated to the variable resistance layer has a radiation span having a width of about 30 μm to about 20,000 μm and a length of about 2,400 μm to about 20,000 μm.

13. The method of claim 1 , wherein a scan speed of the laser is about 5 mm/s to about 300 mm/s.

14. The method of claim 1 , wherein irradiating the variable resistance layer with the laser is performed under an inert gas environment at a pressure of about 1 Torr to about 10 Torr.

15. A method of fabricating a variable resistance memory device, the method comprising:
forming a plurality of first conductive lines on a substrate, wherein the plurality of first conductive lines extend in a first direction;
forming a first interlayer dielectric layer on the first conductive lines;
performing an etching process on a portion of the first interlayer dielectric layer to form a plurality of first trenches that expose the first conductive lines;
forming a second interlayer dielectric layer and a plurality of bottom electrodes in the first trenches;
performing an etching process on portions of the first and second interlayer dielectric layers to form a plurality of second trenches that expose the bottom electrodes;
forming a variable resistance layer in the second trenches;
irradiating the variable resistance layer with a laser; and
forming a plurality of second conductive lines on the variable resistance layer, wherein the second conductive lines extend in a second direction intersecting the first direction,
wherein the variable resistance layer is irradiated with the laser for a time of about 1.8 μs to about 54 μs.

16. The method of claim 15 , wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 18 μs.

17. The method of claim 15 , wherein an energy density of the laser is about 0.1 J/cm 2 to about 4 J/cm 2 .

18. The method of claim 15 , wherein a wavelength of the laser is about 250 nm to about 1,000 nm.

19. The method of claim 15 , wherein the laser radiated to the variable resistance layer has a radiation span having a width of about 30 μm to about 20,000 μm and a length of about 2,400 μm to about 20,000 μm.

20. The method of claim 15 , wherein a scan speed of the laser is about 5 mm/s to about 300 mm/s.

21. The method of claim 15 , wherein each of the plurality of second trenches partially overlaps a corresponding first trench of the plurality of first trenches.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jiho
• Park Kwangmin
• Park Jeonghee
• Park Changyup
• Chung Sukhwan

Classifications

• H01L45/06

  Electricity · mapped topic

• H01L45/143

  Electricity · mapped topic

• H01L45/1641 Primary

  Electricity · mapped topic

• H01L45/144

  Electricity · mapped topic

• H01L45/126

  Electricity · mapped topic