Transistor and electronic device

Patent metadata

Field	Value
Publication number	US-11476281-B2
Application number	US-201916521906-A
Country	US
Kind code	B2
Filing date	Jul 25, 2019
Priority date	Oct 25, 2018
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

First claim

What is claimed is:

1. An electronic device, comprising:
a panel;
a driving circuit configured to drive the panel; and
a transistor disposed in the panel, the transistor including:
a first insulation film on a substrate;
an active layer disposed on the first insulation film;
a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film;
a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer; and
a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer,
wherein the transistor includes a contact region,
wherein the contact region includes a region in which:
a portion of an upper surface of the active layer, a portion of a side surface of the active layer, the second insulation film, and the source electrode overlap each other, and
another portion of the upper surface of the active layer, a portion of a side surface of the active layer, the second insulation film, and the drain electrode overlap each other,

wherein the contact region is a region in which carriers are to be transferred between the active layer and the source electrode and between the active layer and the drain electrode, and
wherein the thickness of the second insulation film is 10 Å or less.

2. The electronic device of claim 1 , wherein a gate electrode is disposed between the substrate and the first insulation film.

3. The electronic device of claim 2 , wherein:
the transistor is disposed in an active area of the panel;
a passivation layer is disposed to cover the source electrode and the drain electrode;
a pixel electrode is disposed on the passivation layer; and
the pixel electrode is electrically connected to the source electrode or the drain electrode through a hole in the passivation layer.

4. The electronic device of claim 3 , wherein a data voltage is applied to the gate electrode.

5. The electronic device of claim 3 , wherein a data voltage is applied to the pixel electrode.

6. The electronic device of claim 1 , wherein the active layer is composed of an amorphous silicon semiconductor.

7. The electronic device of claim 1 , wherein the active layer is composed of a poly-silicon semiconductor.

8. The electronic device of claim 1 , wherein the active layer is composed of an oxide semiconductor.

9. The electronic device of claim 1 , wherein the first insulation film and the second insulation film are made of a same material.

10. The electronic device of claim 1 , wherein the first insulation film and the second insulation film are made of different materials.

11. The electronic device of claim 1 , wherein:
the first insulation film and the second insulation film are formed of an oxide insulation film; and
an oxygen content of the second insulation film is higher than an oxygen content of the first insulation film.

12. The electronic device of claim 1 , wherein the second insulation film has a smaller thickness deviation than the first insulation film.

13. The electronic device of claim 1 , wherein the second insulation film has a higher density than the first insulation film.

14. The electronic device of claim 1 , wherein the second insulation film extends to a non-active area outside of an active area of the panel.

15. The electronic device of claim 1 , wherein the transistor is disposed in an area of each of a plurality of subpixels in an active area of the panel.

16. The electronic device of claim 1 , wherein the transistor is disposed in a non-active area outside of an active area of the panel.

17. The electronic device of claim 1 , wherein:
a third insulation film is disposed to cover the source electrode and the drain electrode; and
a gate electrode is disposed on the third insulation film.

18. The electronic device of claim 17 , wherein:
the transistor is disposed in an active area of the panel;
a passivation layer is disposed to cover the gate electrode;
a pixel electrode is disposed on the passivation layer; and
the pixel electrode is electrically connected to the source electrode or the drain electrode through a hole in the passivation layer and the third insulation film.

19. The electronic device of claim 1 , wherein when the second insulation film is formed by a MOCVD (Metal-Organic Chemical Vapor Deposition) method or a ALD (Atomic Layer Deposition) method.

20. A transistor, comprising:
a first insulation film on a substrate;
an active layer disposed on the first insulation film;
a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film;
a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer; and
a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer,
wherein the transistor includes a contact region,
wherein the contact region includes a region in which:
a portion of an upper surface of the active layer, a portion of a side surface of the active layer, the second insulation film, and the source electrode overlap each other, and
another portion of the upper surface of the active layer, a portion of a side surface of the active layer, the second insulation film, and the drain electrode overlap each other,

wherein the contact region is a region in which carriers are to be transferred between the active layer and the source electrode, and between the active layer and the drain electrode, and
wherein the thickness of the second insulation film is 10 Å or less.

21. The transistor of claim 20 , wherein:
the first insulation film and the second insulation film include a common material; and
the second insulation film is made of a material having more common material content than the first insulation film.

22. An electronic device, comprising:
a panel;
a driving circuit configured to drive the panel; and
a transistor disposed in the panel, the transistor including:
a first insulation film on a substrate;
an active layer disposed on the first insulation film;
a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film;
a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer;
a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer; and
a pixel electrode directly contacting one of the source electrode and the drain electrode,
wherein the transistor includes a contact region,
wherein the contact region includes a region in which:
a portion of an upper surface of the active layer, a portion of a s

Assignees

• Lg Display Co Ltd

Inventors

• Park Sehee
• Seo Jungseok
• Park Jaeyoon
• Yun Pilsang
• Noh Jiyong

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H01L27/1229

  Electricity · mapped topic

• H01L27/1225 Primary

  Electricity · mapped topic

• H01L29/2206

  Electricity · mapped topic

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title