Open-junction ionic transistor

Patent metadata

Field	Value
Publication number	US-11474069-B2
Application number	US-202016887895-A
Country	US
Kind code	B2
Filing date	May 29, 2020
Priority date	May 30, 2019
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.

First claim

What is claimed is:

1. An open-junction ionic transistor comprising:
a substrate;
a p type gel formed by a polyelectrolyte gel on the substrate;
an n type gel formed by the polyelectrolyte gel on the substrate and having one surface contacting one surface of the p type gel;
a first reservoir contacting the other surface of the p type gel;
a second reservoir contacting the other surface of the n type gel; and
an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir,
wherein on the encapsulation layer, an opening for injecting an ion input is formed at a location corresponding to a boundary region contacting the p type gel and the n type gel, and
wherein when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the opening is amplified and ionic current peak is generated.

2. The open-junction ionic transistor of claim 1 , wherein:
ions are added from the first reservoir and the second reservoir, respectively and the ion input is amplified.

3. The open-junction ionic transistor of claim 1 , wherein:
as the reverse bias voltage increases, the ionic current peak increases.

4. The open-junction ionic transistor of claim 1 , wherein:
the ionic current peak is changed according to a type of ion input.

5. The open-junction ionic transistor of claim 4 , wherein:
when cations of the ion input are hydrated, as a radius of the hydrated cation is smaller, the ionic current peak increases.

6. The open-junction ionic transistor of claim 1 , wherein:
the ionic current peak is changed according to ion concentrations of the first reservoir and the second reservoir.

7. An open-junction ionic transistor comprising:
a p type gel which is a polyelectrolyte;
an n type gel which contacts one side of the p type gel and which is the polyelectrolyte;
a first reservoir contacting the other side of the p type gel facing the one side of the p type gel; and
a second reservoir contacting the other side of the n type gel facing one side thereof contacting the p type gel,
wherein an opening for injecting an ion input is formed at a location corresponding to a boundary region contacting the p type and the n type gel, and
wherein a depletion region by reverse bias voltage is formed in the interface of the p type gel and the n type gel and ionic current peak is generated by additional ions introduced from the first reservoir and the second reservoir by the ion input injected into the depletion region through the opening.

8. The open-junction ionic transistor of claim 7 , wherein:
ions are added from the first reservoir and the second reservoir, respectively and the ion input is amplified.

9. The open-junction ionic transistor of claim 7 , wherein:
as the reverse bias voltage increases, the ionic current peak increases.

10. The open-junction ionic transistor of claim 7 , wherein:
the ionic current peak is changed according to a type of ion input.

11. The open-junction ionic transistor of claim 10 , wherein:
when cations of the ion input are hydrated, as a radius of the hydrated cation is smaller, the ionic current peak increases.

12. The open-junction ionic transistor of claim 7 , wherein:
the ionic current peak is changed according to ion concentrations of the first reservoir and the second reservoir.

13. The open-junction ionic transistor of claim 7 , wherein:
the ionic current peak is changed according to ion types of the first reservoir and the second reservoir.

14. The open-junction ionic transistor of claim 13 , wherein:
when the cations of the first reservoir and the second reservoir are hydrated, as the radius of the hydrated cation is smaller, the ionic current peak increases.

15. The open-junction ionic transistor of claim 7 , wherein:
as widths of the p type gel and the n type gel are smaller, the ionic current peak increases.

16. The open-junction ionic transistor of claim 7 , wherein:
as the widths of the p type gel and the n type gel are smaller, an operating speed increases.

17. The open-junction ionic transistor of claim 7 , further comprising:
an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir,
wherein the ion input is injected through an opening formed on the encapsulation layer.

18. The open-junction ionic transistor of claim 17 , wherein:
a location of the opening is positioned in a region corresponding to an interface contacting the p type gel and the n type gel.

19. An open-junction ionic transistor comprising:
a reservoir;
a p type gel which is a polyelectrolyte positioned in the reservoir; and
an n type gel which is positioned in the reservoir and which is a polymer electrolyte contacting one side of the p type gel,
wherein an opening for injecting an ion input is formed at a location corresponding to a boundary region contacting the p type and the n type gel,
wherein a depletion region by reverse bias voltage is formed in the p type gel and the n type gel and ionic current peak is generated by additional ions introduced from the reservoir by the ion input injected into the depletion region through the opening, and
the p type gel and the n type gel are polyanionic hydrogel or polymer backbones of the p type gel having fixed negative charges and the n type gel having fixed positive charges.

20. The open-junction ionic transistor of claim 19 , wherein:
the p type gel is composed by any one of poly 3-sulfopropyl acrylate potassium salt, poly vinylsulfonic acid (pVSA), poly styrene sulfonic acid (pSS), and poly 2-acrylamide-2-methyl-1-propanesulfonic acid (pAMPSA), and poly acrylic acid (pAAc), hyaluronic acid (HA), alginate, and
the n type gel is composed by any one of poly diallyl-dimethylammonium chloride, poly N-[3-(N,N-dimethylamino)propyl] acrylamide methyl chloride quarternary (pDMAPAA-Q), and poly(2-[acryloyloxy ethyl] trimethyl ammonium chloride (pAETMAC), chitosan.

Assignees

• Seoul Nat Univ R&Db Foundation

Inventors

• Sun Jeong-Yun
• Joo Young-Chang
• Chung Taek Dong
• Lee Hae-Ryung
• Lim Seung-Min
• Han Seok Hee
• Yoo Hyunjae

Classifications

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title

• G01N27/414 Primary

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title

• H10D8/045

  of PN junction diodes · CPC title

• H10D8/50 Primary

  PIN diodes · CPC title