Colored radiative cooler based on Tamm structure

Patent metadata

Field	Value
Publication number	US-11472935-B2
Application number	US-201916692925-A
Country	US
Kind code	B2
Filing date	Nov 22, 2019
Priority date	May 15, 2019
Publication date	Oct 18, 2022
Grant date	Oct 18, 2022

Abstract

The present invention provides a colored radiative cooler based on a Tamm structure, including a substrate on which metal film and dielectric layers A to G are sequentially provided from bottom to top, where the Tamm structure is formed from the metal film and the dielectric layers A to D; a distributed Bragg reflector is formed from the dielectric layers A to D; and a selective emitter is formed from the dielectric layers E to G. Compared to the conventional radiative cooler, the colored radiative cooler not only has better cooling performance, but it has a wide applications in many aspects such as aesthetics and decoration.

First claim

We claim:

1. A method for fabricating a yellow radiative cooler based on a Tamm structure, comprising:
S 1 ) selecting a SiO 2 glass substrate cleaned by an ion beam, and depositing, using electron beam evaporation, an Ag film with a thickness of 24 nm on the SiO 2 glass substrate;
S 2 ) performing pre-sputtering for the Ag film for 15 minutes; depositing a SiC dielectric layer A with a thickness of 30 nm on the Ag film under room temperature using RF magnetron reactive sputtering; and performing high-temperature annealing;
S 3 ) depositing a MgF 2 dielectric layer B with a thickness of 56 nm on the dielectric layer A using the electron beam evaporation, wherein a vacuum degree is 2×10 −4 Pa during the electron beam evaporation;
S 4 ) performing pre-sputtering for the dielectric layer B for 15 minutes; depositing a SiC dielectric layer C with a thickness of 30 nm on the dielectric layer B using the RF magnetron reactive sputtering under the room temperature; and performing high-temperature annealing;
S 5 ) depositing a MgF 2 dielectric layer D with a thickness of 56 nm on the dielectric layer C using the electron beam evaporation, wherein a vacuum degree is 2×10 −4 Pa during the electron beam evaporation;
S 6 ) performing pre-sputtering with Ar; depositing a SiO 2 dielectric layer E with a thickness of 52 nm on the dielectric layer D using the RF magnetron reactive sputtering, wherein Ar is a sputtering gas, and O 2 is a reaction gas;
S 7 ) performing pre-sputtering for 10 minutes with Ar to remove impurities on the target surface; depositing a SiN dielectric layer F with a thickness of 900 nm on the dielectric layer E using the RF magnetron reactive sputtering, wherein the sputtering gas and the reaction gas are high-purity Ar and high-purity N 2 , respectively; and
S 8 ) performing pre-sputtering with Ar; depositing a SiO 2 dielectric layer G with a thickness of 85 nm on the dielectric film layer F using the RF magnetron reactive sputtering, wherein Ar is the sputtering gas, and O 2 is the reaction gas.

Assignees

• Univ Suzhou
• Univ Soochow

Inventors

• Li Xiaofeng
• Sheng Chunxiang
• An Yidan
• Zhang Cheng
• Du Jun
• Ye Yan
• Chen Linsen

Classifications

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/024

  Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence) · CPC title

• F25B23/003

  using selective radiation effect · CPC title

• C23C28/341

  with at least one carbide layer · CPC title

• C23C14/022

  by means of bombardment with energetic particles or radiation · CPC title