Photodiode, method for preparing the same, and electronic device

Patent metadata

Field	Value
Publication number	US-11469336-B2
Application number	US-202016958120-A
Country	US
Kind code	B2
Filing date	Jan 17, 2020
Priority date	Feb 2, 2019
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.

First claim

The invention claimed is:

1. A photodiode, comprising:
a first electrode layer and a semiconductor structure that are stacked, wherein a surface of the semiconductor structure away from the first electrode layer has a first concave-convex structure, wherein the first concave-convex structure is crystallized; and
a second electrode layer arranged on the surface of the semiconductor structure away from the first electrode layer, wherein a surface of the second electrode layer away from the first electrode layer has a second concave-convex structure,
wherein the semiconductor structure comprises:
a first semiconductor layer arranged on a surface of the first electrode layer; and
a second semiconductor layer arranged on a face of the first semiconductor layer away from the first electrode layer, wherein a surface of the second semiconductor layer away from the first electrode layer has the first concave-convex structure,

wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer; wherein the first semiconductor layer comprises a P-type amorphous silicon layer, the intrinsic amorphous silicon layer is located on a surface of the P-type amorphous silicon layer away from the first electrode layer, and a surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; and wherein the second semiconductor layer comprises an N-type metal oxide semiconductor layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the N-type metal oxide semiconductor layer away from the first electrode layer has the first concave-convex structure,
or
wherein the semiconductor structure further comprises an intrinsic amorphous silicon layer; wherein the first semiconductor layer comprises an N-type metal oxide semiconductor layer, the intrinsic amorphous silicon layer is located on a surface of the N-type metal oxide semiconductor layer away from the first electrode layer, and the surface of the intrinsic amorphous silicon layer away from the first electrode layer has a third concave-convex structure formed by crystallizing amorphous silicon in its surface; and wherein the second semiconductor layer comprises a P-type amorphous silicon layer arranged on a surface of the intrinsic amorphous silicon layer away from the first electrode layer, and a surface of the P-type amorphous silicon layer away from the first electrode layer has the first concave-convex structure.

2. The photodiode of claim 1 , wherein the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have substantially the same profile.

3. The photodiode of claim 1 , wherein the convexes in the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have a height in a direction perpendicular to a surface of the first electrode layer in contact with the semiconductor structure in a range from 30 nm to 80 nm, a maximum width in the direction parallel to the surface of the first electrode layer in contact with the semiconductor structure in a range from 0.1 μm to 0.5 μm, and a pitch between adjacent convexes in a range from 0.1 μm to 0.4 μm.

4. The photodiode of claim 1 , wherein the second electrode layer is a transparent electrode layer.

5. An electronic device comprising the photodiode of claim 1 .

6. The electronic device of claim 5 , wherein the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have substantially the same profile.

7. The electronic device of claim 5 , wherein the convexes in the first concave-convex structure, the second concave-convex structure, and the third concave-convex structure have a height in a direction perpendicular to a surface of the first electrode layer in contact with the semiconductor structure in a range from 30 nm to 80 nm, a maximum width in the direction parallel to the surface of the first electrode layer in contact with the semiconductor structure in a range from 0.1 μm to 0.5 μm, and a pitch between adjacent convexes in a range from 0.1 μm to 0.4 μm.

8. The electronic device of claim 5 , wherein the second electrode layer is a transparent electrode layer.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Technology Dev Co Ltd

Inventors

• Du Jianhua
• Li Chao
• Qiang Zhaohui
• Gao Yupeng
• Guan Feng
• Huang Rui
• Wang Zhi
• Lv Yang
• Luo Chao

Classifications

• Y02E10/548

  Amorphous silicon PV cells · CPC title

• H01L31/1884

  Electricity · mapped topic

• H01L31/022466 Primary

  Electricity · mapped topic

• H01L31/03762

  Electricity · mapped topic

• H01L31/202

  Electricity · mapped topic