Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11469083-B2
Application number	US-202117200372-A
Country	US
Kind code	B2
Filing date	Mar 12, 2021
Priority date	Jul 21, 2016
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

There is provided a substrate processing apparatus that includes a substrate support configured to support one or more substrates, a process chamber in which the one or more substrates are processed, a gas supplier configured to supply gas, and a plasma generator including a plurality of first rod-shaped electrodes connected to a high-frequency power supply; and a second rod-shaped electrode installed between two first rod-shaped electrodes is grounded; and a buffer structure configured to accommodate the plurality of first rod-shaped electrodes and the second rod-shaped electrode, and having a first wall surface on which a gas supply port that supplies gas into the process chamber is installed. Wherein the plasma generator is configured to convert gas into plasma by the plurality of first rod-shaped electrodes and the second rod-shaped electrode to supply the plasma-converted gas to the process chamber from the gas supply port.

First claim

What is claimed is:

1. A substrate processing apparatus, comprising:
a substrate support configured to support one or more substrates;
a process chamber in which the one or more substrates are processed;
a gas supplier configured to supply gas;
two first rod-shaped electrodes connected to a high-frequency power supply;
a second rod-shaped electrode installed between the two first rod-shaped electrodes, and that is grounded; and
a buffer structure that forms a buffer chamber configured to:
convert gas into plasma in a plasma generation region between one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the one of the two first rod-shaped electrodes from the high-frequency power supply; and
convert gas into plasma in a plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the other one of the two first rod-shaped electrodes from the high-frequency power supply,

wherein the buffer structure includes:
a first gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the one of the two first rod-shaped electrodes and the second rod-shaped electrode, to the process chamber; and
a second gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode, to the process chamber.

2. The substrate processing apparatus of claim 1 , wherein the second rod-shaped electrode is used in common for the two first rod-shaped electrodes.

3. The substrate processing apparatus of claim 1 , wherein the two first rod-shaped electrodes and the second rod-shaped electrode are used in a capacitive-coupling manner to convert the gas into the plasma.

4. The substrate processing apparatus of claim 1 , wherein the substrate support supports a plurality of the substrates at multiple stages in a vertical direction, and
wherein the two first rod-shaped electrodes and the second rod-shaped electrode are arranged in the vertical direction from a lower portion of the process chamber to an upper portion of the process chamber.

5. The substrate processing apparatus of claim 1 , wherein the two first rod-shaped electrodes and the second rod-shaped electrode are covered with electrode protection tubes.

6. The substrate processing apparatus of claim 1 , wherein a number of the two first rod-shaped electrodes is larger than a number of the second rod-shaped electrode.

7. The substrate processing apparatus of claim 1 ,
wherein the buffer structure is installed along a stacking direction of the one or more substrates in a region extending from a lower portion of an inner wall of the process chamber to an upper portion of the inner wall of the process chamber.

8. The substrate processing apparatus of claim 7 , wherein the buffer structure is installed in the process chamber.

9. The substrate processing apparatus of claim 1 , wherein the gas supplier includes:
a precursor gas supplier configured to supply a precursor gas into the process chamber; and
a reaction gas supplier configured to supply a reaction gas to a plasma generator.

10. The substrate processing apparatus of claim 9 ,
wherein a gas supply hole of the reaction gas supplier is opened to face a wall surface of the buffer structure.

11. The substrate processing apparatus of claim 9 ,
wherein the precursor gas supplier and the buffer structure are installed at positions facing each other.

12. The substrate processing apparatus of claim 9 , wherein the precursor gas is a silicon-containing gas, and
wherein the reaction gas is a nitrogen-containing gas.

13. The substrate processing apparatus of claim 7 , wherein the gas supplier includes a gas supply hole that supplies gas into the buffer chamber, and
wherein the buffer structure includes a wall surface formed of an arc-shape and a wall surface formed in a radial direction, and the gas supply hole is opened to face the wall surface of the buffer structure that is formed in the radial direction.

14. The substrate processing apparatus of claim 13 , wherein the one of the two first rod-shaped electrodes is installed adjacent to the wall surface formed in the radial direction.

15. The substrate processing apparatus of claim 7 , wherein the buffer structure is made of insulating material.

16. A plasma generating device, comprising:
a gas supplier configured to supply gas;
two first rod-shaped electrodes connected to a high-frequency power supply;
a second rod-shaped electrode installed between the two first rod-shaped electrodes, and that is grounded; and
a buffer structure that forms a buffer chamber configured to:
convert gas into plasma in a plasma generation region between one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the one of the two first rod-shaped electrodes from the high-frequency power supply; and
convert gas into plasma in a plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the other one of the two first rod-shaped electrodes from the high-frequency power supply,

wherein the buffer structure includes:
a first gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the one of the two first rod-shaped electrodes and the second rod-shaped electrode, to a process chamber; and
a second gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode, to the process chamber.

17. A reaction tube, comprising:
two first rod-shaped electrodes connected to a high-frequency power supply;
a second rod-shaped electrode installed between the two first rod-shaped electrodes, and that is grounded; and
a buffer structure that forms a buffer chamber configured to:
convert gas into plasma in a plasma generation region between one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the one of the two first rod-shaped electrodes from the high-frequency power supply; and
convert gas into plasma in a plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode by applying high-frequency power to the other one of the two first rod-shaped electrodes from the high-frequency power supply,

wherein the buffer structure includes:
a first gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the one of the two first rod-shaped electrodes and the second rod-shaped electrode, to a process chamber; and
a second gas supply port configured to supply the gas, which is plasma-converted in the plasma generation region between the other one of the two first rod-shaped electrodes and the second rod-shaped electrode, to the process chamber.

Assignees

• Kokusai Electric Corp

Inventors

• Sato Akihiro
• Takeda Tsuyoshi
• Hirochi Yukitomo

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title