Plasma generating device, substrate processing apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11469081-B2
Application number	US-201916250673-A
Country	US
Kind code	B2
Filing date	Jan 17, 2019
Priority date	Jul 21, 2016
Publication date	Oct 11, 2022
Grant date	Oct 11, 2022

Abstract

There is provided a plasma generating device that includes a first electrode connected to a high-frequency power supply, and a second electrode to be grounded, wherein the first electrode and the second electrode are alternately arranged such that a number of electrodes of the first electrode and the second electrode are in an odd number of three or more in total, and wherein the second electrode is used in common for two of the first electrode being respectively adjacent to the second electrode used in common.

First claim

What is claimed is:

1. A plasma generating device, comprising:
a first rod-shaped electrode and a second rod-shaped electrode connected to a high-frequency power supply;
a third rod-shaped electrode installed between the first rod-shaped electrode and the second rod-shaped electrode, and that is grounded;
a gas supplier configured to supply gas; and
at least one buffer structure that forms a buffer chamber configured to accommodate the first rod-shaped electrode, the second rod-shaped electrode, the third rod-shaped electrode, and the gas supplier,
wherein high-frequency power is applied to the first rod-shaped electrode from the high-frequency power supply to convert gas into plasma in a plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, and high-frequency power is applied to the second rod-shaped electrode from the high-frequency power supply to convert gas into plasma in a plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, and
wherein gas supply ports that supply gas into a process chamber are located between the first rod-shaped electrode and the third rod-shaped electrode and between the second rod-shaped electrode and the third rod-shaped electrode, on a side wall surface of the buffer structure.

2. The device of claim 1 , wherein the side wall surface of the buffer structure is formed to face a side surface of a substrate.

3. The device of claim 1 , wherein the gas supply ports are opened to face a center of a substrate.

4. A substrate processing apparatus, comprising:
a process chamber in which a substrate is processed;
a gas supplier configured to supply gas into the process chamber; and
a plasma generating device configured to activate the gas by converting the gas into plasma; and
an exhaust system configured to evacuate an interior of the process chamber,
wherein the plasma generating device includes:
a first rod-shaped electrode and a second rod-shaped electrode connected to a high-frequency power supply;
a third rod-shaped electrode installed between the first rod-shaped electrode and the second rod-shaped electrode, and that is grounded; and
at least one buffer structure that forms a buffer chamber configured to accommodate the first rod-shaped electrode, the second rod-shaped electrode, the third rod-shaped electrode, and the gas supplier,

wherein high-frequency power is applied to the first rod-shaped electrode from the high-frequency power supply to convert the gas into plasma in a plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, and high-frequency power is applied to the second rod-shaped electrode from the high-frequency power supply to convert the gas into plasma in a plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, and
wherein gas supply ports that supply gas into the process chamber are located between the first rod-shaped electrode and the third rod-shaped electrode and between the second rod-shaped electrode and the third rod-shaped electrode, on a side wall surface of the buffer structure.

5. The apparatus of claim 4 , wherein the side wall surface of the buffer structure is formed to face a side surface of the substrate.

6. The apparatus of claim 4 , wherein the gas supply ports are opened to face a center of the substrate.

7. The apparatus of claim 4 , further comprising:
a controller configured to control the high-frequency power supply,
wherein the controller controls the high-frequency power supply by monitoring an impedance of the plasma generating device.

8. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and different reaction gases are supplied to the plurality of buffer structures respectively.

9. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and the same reaction gas is supplied to the plurality of buffer structures.

10. The apparatus of claim 4 , wherein the at least one buffer structure includes a plurality of buffer structures, and the plurality of buffer structures are installed, with the exhaust system interposed between the plurality of buffer structures, in a line-symmetrical manner with respect to a line passing through the exhaust system and a center of the process chamber.

11. The apparatus of claim 4 , wherein the gas supplier includes a gas supply hole that supplies gas into the buffer chamber, and
wherein the buffer structure includes a wall surface formed of an arc-shape and a wall surface formed in a radial direction, and the gas supply hole is opened to face the wall surface of the buffer structure that is formed in the radial direction.

12. The apparatus of claim 11 , wherein the first rod-shaped electrode or the second rod-shaped electrode is installed adjacent to the wall surface formed in the radial direction.

13. The apparatus of claim 4 , wherein the gas supply ports include:
a first gas supply port that supplies the plasma-converted gas, which is generated in the plasma generation region between the first rod-shaped electrode and the third rod-shaped electrode, to the process chamber; and
a second gas supply port that supplies the plasma-converted gas, which is generated in the plasma generation region between the second rod-shaped electrode and the third rod-shaped electrode, to the process chamber.

14. The apparatus of claim 4 , wherein the buffer structure is made of insulating material.

Assignees

• Kokusai Electric Corp

Inventors

• Sato Akihiro
• Takeda Tsuyoshi
• Hirochi Yukitomo

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H01J37/32568 Primary

  Relative arrangement or disposition of electrodes; moving means · CPC title