Method of forming a porous multilayer material

US11466358B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11466358-B2
Application numberUS-202017120576-A
CountryUS
Kind codeB2
Filing dateDec 14, 2020
Priority dateDec 13, 2019
Publication dateOct 11, 2022
Grant dateOct 11, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a porous multilayer material, the method comprising: forming a multilayer material on a substrate, wherein forming the multilayer material comprises alternately forming a sacrificial layer and a semi-sacrificial layer, wherein the sacrificial layer comprises a first metal and the semi-sacrificial layer comprises the first metal and a second metal or metallic alloy; separating the multilayer material from the substrate; and removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. 2. The method of claim 1 , further comprising sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer. 3. The method of claim 1 , further comprising, after removing at least the portion of the first metal, sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer. 4. The method of claim 3 , further comprising crushing the porous multilayer material. 5. The method of claim 1 , wherein forming the sacrificial layer comprises electron beam evaporation of the first metal. 6. The method of claim 1 , wherein forming the semi-sacrificial layer comprises sputtering. 7. The method of claim 1 , wherein removing at least the portion of the first metal comprises dissolving at least the portion of the first metal. 8. The method of claim 1 , wherein removing at least the portion of the first metal comprises boiling off at least the portion of the first metal. 9. The method of claim 1 , wherein removing at least the portion of the first metal comprises removing substantially all of the first metal. 10. The method of claim 1 , wherein removing at least the portion of the first metal defines voids between the semi-sacrificial layers. 11. The method of claim 1 , wherein a thickness of each sacrificial layer is in a range of about 0.2 μm to about 2 μm. 12. The method of claim 1 , wherein a thickness of each semi-sacrificial layer is in range of about 5 nm to about 100 nm. 13. The method of claim 1 , wherein a thickness of the porous multilayer material is in a range of about 100 μm to about 500 μm. 14. The method of claim 1 , wherein the first metal comprises one or both of copper and magnesium. 15. The method of claim 1 , wherein the second metal or metallic alloy comprises one or more of chromium, niobium, tantalum, vanadium, molybdenum, and tungsten. 16. The method of claim 1 , wherein each semi-sacrificial layer comprises 70-85 atomic percent of the first metal.

Assignees

Inventors

Classifications

  • only coatings {only including layers} of metallic material · CPC title

  • Removal of material · CPC title

  • C23C14/14Primary

    Metallic material, boron or silicon · CPC title

  • Materials specially adapted for additive manufacturing · CPC title

  • characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness · CPC title

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What does patent US11466358B2 cover?
Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further in…
Who is the assignee on this patent?
Rajagopalan Jagannathan, Univ Arizona State
What technology area does this patent fall under?
Primary CPC classification C23C14/14. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 11 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).