Method for removing a sacrificial layer on semiconductor wafers
US-2020168464-A1 · May 28, 2020 · US
US11466358B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11466358-B2 |
| Application number | US-202017120576-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 14, 2020 |
| Priority date | Dec 13, 2019 |
| Publication date | Oct 11, 2022 |
| Grant date | Oct 11, 2022 |
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Forming a porous multilayer material includes forming a multilayer material on a substrate. Forming the multilayer material includes alternately forming a sacrificial layer and a semi-sacrificial layer, where the sacrificial layer includes a first metal and the semi-sacrificial layer includes the first metal and a second metal or metallic alloy. Forming the porous multilayer material further includes removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. The porous multilayer material includes a multiplicity of metal-containing layers, each layer having a thickness in a range between about 5 nm and about 100 nm and bonded to an adjacent layer. Each layer includes chromium, niobium, tantalum, vanadium, molybdenum, tungsten, or a combination thereof. A void is defined between each pair of layers, and a density of porous the multilayer material is <1% bulk density.
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What is claimed is: 1. A method of forming a porous multilayer material, the method comprising: forming a multilayer material on a substrate, wherein forming the multilayer material comprises alternately forming a sacrificial layer and a semi-sacrificial layer, wherein the sacrificial layer comprises a first metal and the semi-sacrificial layer comprises the first metal and a second metal or metallic alloy; separating the multilayer material from the substrate; and removing at least a portion of the first metal from each of the sacrificial and semi-sacrificial layers to yield the porous multilayer material. 2. The method of claim 1 , further comprising sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer. 3. The method of claim 1 , further comprising, after removing at least the portion of the first metal, sintering the porous multilayer material to bond each semi-sacrificial layer to an adjacent semi-sacrificial layer. 4. The method of claim 3 , further comprising crushing the porous multilayer material. 5. The method of claim 1 , wherein forming the sacrificial layer comprises electron beam evaporation of the first metal. 6. The method of claim 1 , wherein forming the semi-sacrificial layer comprises sputtering. 7. The method of claim 1 , wherein removing at least the portion of the first metal comprises dissolving at least the portion of the first metal. 8. The method of claim 1 , wherein removing at least the portion of the first metal comprises boiling off at least the portion of the first metal. 9. The method of claim 1 , wherein removing at least the portion of the first metal comprises removing substantially all of the first metal. 10. The method of claim 1 , wherein removing at least the portion of the first metal defines voids between the semi-sacrificial layers. 11. The method of claim 1 , wherein a thickness of each sacrificial layer is in a range of about 0.2 μm to about 2 μm. 12. The method of claim 1 , wherein a thickness of each semi-sacrificial layer is in range of about 5 nm to about 100 nm. 13. The method of claim 1 , wherein a thickness of the porous multilayer material is in a range of about 100 μm to about 500 μm. 14. The method of claim 1 , wherein the first metal comprises one or both of copper and magnesium. 15. The method of claim 1 , wherein the second metal or metallic alloy comprises one or more of chromium, niobium, tantalum, vanadium, molybdenum, and tungsten. 16. The method of claim 1 , wherein each semi-sacrificial layer comprises 70-85 atomic percent of the first metal.
only coatings {only including layers} of metallic material · CPC title
Removal of material · CPC title
Metallic material, boron or silicon · CPC title
Materials specially adapted for additive manufacturing · CPC title
characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness · CPC title
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