Enhanced performance metallic based optical mirror substrates
US-2015293275-A1 · Oct 15, 2015 · US
US11466356B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11466356-B2 |
| Application number | US-202016994526-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 14, 2020 |
| Priority date | Aug 16, 2019 |
| Publication date | Oct 11, 2022 |
| Grant date | Oct 11, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method for producing an aluminum layer is provided. The method includes depositing a metallic seed layer on a substrate, the seed layer having a thickness of not more than 5 nm, and also includes applying the aluminum layer to the seed layer, wherein the aluminum layer has a thickness of more than 30 nm. Further, an optical element, which can be a mirror layer, is provided including the metallic seed layer and the aluminum layer.
Opening claim text (preview).
The invention claimed is: 1. A method for producing an optical element including a substrate, a metallic seed layer on the substrate and an aluminum layer deposited on a side of the metallic seed layer that faces away from the substrate, wherein the aluminum layer directly adjoins the metallic seed layer and the aluminum layer has a root mean square roughness of less than 0.7 nm, the method comprising: depositing the metallic seed layer on the substrate, the metallic seed layer having a thickness of not more than 5 nm; and applying the aluminum layer directly to the metallic seed layer, wherein the aluminum layer has a thickness of 30 nm to 100 nm inclusive. 2. The method according to claim 1 , wherein the metallic seed layer comprises Cu, Ti, Fe, Zn or Cr. 3. The method according to claim 1 , wherein the metallic seed layer is between 2 nm and 5 nm thick. 4. The method according to claim 1 , wherein the metallic seed layer is between 2.5 nm and 3.5 nm thick. 5. The method according to claim 1 , wherein the aluminum layer has a root mean square surface roughness of less than 0.4 nm. 6. The method according to claim 1 , further comprising applying a protective layer to the aluminum layer, wherein the protective layer has a thickness of not more than 5 nm. 7. An optical element comprising: a substrate; a metallic seed layer on the substrate, the metallic seed layer having a thickness of not more than 5 nm; and an aluminum layer disposed on a side of the metallic seed layer that faces away from the substrate, wherein the aluminum layer directly adjoins the metallic seed layer, wherein the aluminum layer has a thickness of 30 nm to 100 nm inclusive, and wherein the aluminum layer has a root mean square roughness of less than 0.7 nm. 8. The optical element according to claim 7 , wherein the metallic seed layer comprises Cu, Ti, Fe, Zn or Cr. 9. The optical element according to claim 7 , wherein the optical element is a mirror, and wherein the aluminum layer is a mirror layer. 10. The optical element according to claim 7 , wherein the metallic seed layer is between 2 nm and 5 nm thick. 11. The optical element according to claim 7 , wherein the metallic seed layer is between 2.5 nm and 3.5 nm thick. 12. The optical element according to claim 7 , wherein the aluminum layer has a root mean square surface roughness of less than 0.4 nm. 13. The optical element according to claim 7 , further comprising a protective layer disposed on the aluminum layer, wherein the protective layer has a thickness of not more than 5 nm. 14. An optical element comprising: a substrate; a metallic seed layer on the substrate, the metallic seed layer having a thickness of not more than 5 nm; and an aluminum layer disposed on a side of the metallic seed layer that faces away from the substrate, wherein the aluminum layer directly adjoins the metallic seed layer, wherein the aluminum layer has a thickness of more than 30 nm, wherein the metallic seed layer is between 2.5 nm and 3.5 nm thick, and wherein all layers of the optical element are arranged on a same side of the substrate. 15. The optical element of claim 14 , wherein the metallic seed layer comprises Cu, Ti, Fe, Zn or Cr. 16. The optical element of claim 14 , wherein the optical element is a mirror, and wherein the aluminum layer is a mirror layer. 17. The optical element of claim 14 , further comprising a protective layer disposed on the aluminum layer, wherein the protective layer has a thickness of not more than 5 nm. 18. The optical element of claim 14 , wherein the aluminum layer has a root mean square surface roughness of less than 0.4 nm.
having a single reflecting layer (G02B5/0883, G02B5/0891 take precedence) · CPC title
Metallic sublayers · CPC title
Ultraviolet [UV] mirrors (apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06) · CPC title
Metallic material, boron or silicon · CPC title
Cleaning or etching treatments · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.