Method for tuning an antenna with a DVC

Patent metadata

Field	Value
Publication number	US-11462835-B2
Application number	US-201716316311-A
Country	US
Kind code	B2
Filing date	Jul 19, 2017
Priority date	Jul 20, 2016
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

The present disclosure generally relates to any device capable of wireless communication, such as a mobile telephone or wearable device, having one or more antennas. After measuring reflection coefficients of a device at three different DVC states, the reflection coefficient for all other DVC states can be calculated. Thus, based solely upon three reflection coefficient measurements, the antenna can be tuned to adjust for any changes in impedance at the antenna.

First claim

What is claimed is:

1. A method, comprising:
measuring a reflection coefficient of a device at a first DVC state;
changing the first DVC state to a second DVC state;
measuring the reflection coefficient of the device at the second DVC state;
determining whether a slope look-up table is available;
either
a) reviewing the slope look-up table for a third DVC state to measure or
b) changing the second DVC state to the third DVC state;
measuring the reflection coefficient of the device at the third DVC state;
calculating reflection coefficients for all unmeasured DVC states based on the measured reflection coefficients of the first, second, and third DVC states; and
selecting a desired DVC state.

2. The method of claim 1 , further comprising detecting an increase in the reflection coefficient.

3. The method of claim 1 , wherein further comprising detecting a decrease in the reflection coefficient.

4. The method of claim 1 , wherein the determining comprises determining that a slope look-up table is available.

5. The method of claim 4 , further comprising reviewing the slope look-up table for the third DVC state to measure.

6. The method of claim 1 , wherein the determining comprises determining that a slope look-up table is not available.

7. The method of claim 6 , further comprising changing the second DVC state to the third DVC state.

8. The method of claim 7 , wherein changing the second DVC state comprises increasing the capacitance.

9. The method of claim 8 , wherein changing the first DVC state to the second DVC state comprises increasing the capacitance.

10. The method of claim 7 , wherein changing the second DVC state comprises decreasing the capacitance.

11. The method of claim 10 , wherein changing the first DVC state to the second DVC state comprises decreasing the capacitance.

12. A method, comprising:
measuring a reflection coefficient of a device at a first DVC state;
measuring the reflection coefficient of the device at a second DVC state;
reviewing a slope look-up table for a third DVC state to measure;
measuring the reflection coefficient of the device at the third DVC state;
calculating reflection coefficients for all unmeasured DVC states based on the measured reflection coefficients of the first, second, and third DVC states; and
selecting a desired DVC state.

13. The method of claim 12 , wherein no change in the reflection coefficient is detected between the reflection coefficient at the first DVC state and the reflection coefficient at the second DVC state.

14. The method of claim 12 , further comprising determining that a slope look-up table is available.

15. The method of claim 14 , further comprising reviewing the slope look-up table for the third DVC state to measure.

16. A method, comprising:
measuring a reflection coefficient of a device at a first DVC state;
measuring the reflection coefficient of the device at a second DVC state;
changing the second DVC state to a third DVC state;
measuring the reflection coefficient of the device at the third DVC state;
calculating reflection coefficients for all unmeasured DVC states based on the measured reflection coefficients of the first, second, and third DVC states; and
selecting a desired DVC state.

17. The method of claim 16 , wherein no change in capacitance is detected between measuring the capacitance to obtain the first DVC state and measuring the capacitance in the second DVC state.

18. The method of claim 16 , further comprising determining that a slope look-up table is not available.

19. The method of claim 18 , further comprising changing the second DVC state to the third DVC state.

20. The method of claim 19 , wherein changing the second DVC state comprises increasing the capacitance.

21. The method of claim 19 , wherein changing the second DVC state comprises decreasing the capacitance.

Assignees

• Cavendish Kinetics Inc
• Qorvo Us Inc

Inventors

• Niu Chenhui
• Parkhurst Ray
• Tornatta Jr Paul Anthony
• Johnsson Lars Ernst

Classifications

• H03J2200/39

  Variable capacitors implemented using microelectro-mechanical systems [MEMS] · CPC title

• H04B1/0458 Primary

  Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H) · CPC title

• H01Q15/148 Primary

  with means for varying the reflecting properties (H01Q15/147 takes precedence) · CPC title

• G01R27/2605

  Measuring capacitance (capacitive sensors G01D5/24) · CPC title

• G01R27/02

  Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant (by measuring phase angle only G01R25/00) · CPC title