Composition for film formation, film-forming method and directed self-assembly lithography process

Patent metadata

Field	Value
Publication number	US-11460767-B2
Application number	US-201916239592-A
Country	US
Kind code	B2
Filing date	Jan 4, 2019
Priority date	Jul 6, 2016
Publication date	Oct 4, 2022
Grant date	Oct 4, 2022

Abstract

A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.

First claim

The invention claimed is:

1. A composition for film formation comprising a polymer component and a solvent,
wherein the polymer component consists of a polymer which comprises:
a main chain which comprises:
a first repeating unit that comprises a crosslinkable group, and is derived from at least one first monomer selected from the group consisting of 2-(2-vinyloxyethoxy)ethyl (meth)acrylate, allyl (meth)acrylate, 4-vinylbenzocyclobutene, and t-butoxystyrene;
a second repeating unit that differs from the first repeating unit, and is derived from a second monomer which is an unsubstituted styrene; and
a third repeating unit that differs from the first repeating unit, has higher polarity than polarity of the second repeating unit, and is derived from at least one third monomer selected from the group consisting of an (meth)acrylic acid alkyl ester and an alkylene carbonate;

a structural unit comprising a group in which a bromine atom is removed from a 2-hydroxyalkyl 2-bromoisobutyrate, the hydroxy group in the 2-hydroxyalkyl 2-bromoisobutyrate being an interacting group which is capable of interacting with Si—OH, Si—H or Si—N, the structural unit being positioned on one end of the main chain of the polymer; and
a bromine atom which is positioned on the other end of the main chain of the polymer on which the structural unit is not positioned,

wherein the polymer is produced by polymerizing the first monomer, the second monomer, and the third monomer in a presence of the 2-hydroxyalkyl 2-bromoisobutyrate.

2. The composition according to claim 1 , which is suitable for a base of a directed self-assembled film in a directed self-assembly lithography process.

3. The composition according to claim 1 , which is suitable for formation of a base of a directed self-assembled film,
wherein
the directed self-assembled film is to be formed directly or indirectly on at least an upper face side of a substrate comprising Si—OH, Si—H or Si—N at least on a surface layer thereof, and
the directed self-assembled film comprises a block copolymer comprising: a block comprising the second repeating unit; and a block comprising the third repeating unit.

4. A film-forming method comprising:
applying the composition according to claim 1 directly or indirectly on at least an upper face side of a substrate to form a coating film; and
heating the coating film.

5. The film-forming method according to claim 4 , wherein the substrate comprises Si—OH, Si—H or Si—N at least on a surface layer thereof.

6. A directed self-assembly lithography process comprising:
applying the composition according to claim 1 directly or indirectly on at least an upper face side of a substrate to form a coating film;
heating the coating film to form a base;
applying a composition comprising a block copolymer and a solvent, directly or indirectly on an upper face side of the base to form a block copolymer film;
allowing phase separation in the block copolymer film to form a plurality of phases;
removing one phase of the plurality of phases from the block polymer film to form a resist pattern; and
etching the substrate using directly or indirectly the resist pattern as a mask.

7. The directed self-assembly lithography process according to claim 6 , wherein the substrate comprises Si—OH, Si—H or Si—N at least on a surface layer thereof.

8. The directed self-assembly lithography process according to claim 6 , wherein the block copolymer comprises: a block comprising the second repeating unit; and a block comprising the third repeating unit.

9. The composition according to claim 1 , wherein a proportion of the second repeating unit with respect to all repeating units constituting the polymer is 60 mol % or more.

10. The composition according to claim 1 , wherein a proportion of the third repeating unit with respect to all repeating units constituting the polymer is 50 mol % or less.

11. The composition according to claim 1 , wherein the 2-hydroxyalkyl 2-bromoisobutyrate is 2-hydroxyethyl 2-bromoisobutyrate.

12. The composition according to claim 1 , wherein the polymer is synthesized through atom transfer radical polymerization.

13. The composition according to claim 1 , wherein the main chain of the polymer consists of the first repeating unit, the second repeating unit, and the third repeating unit.

14. The composition according to claim 1 , wherein the main chain of the polymer is a random copolymer.

15. The composition according to claim 1 , wherein a proportion of the first repeating unit is from 1 to 15 mol % with respect to total repeating units of the polymer, a proportion of the second repeating unit is from 20 to 90 mol % with respect to the total repeating units of the polymer, and a proportion of the third repeating unit is from 5 to 70 mol % with respect to the total repeating units of the polymer.

16. The composition according to claim 1 , wherein a proportion of the first repeating unit is from 3 to 10 mol % with respect to total repeating units of the polymer, a proportion of the second repeating unit is from 40 to 80 mol % with respect to the total repeating units of the polymer, and a proportion of the third repeating unit is from 10 to 50 mol % with respect to the total repeating units of the polymer.

17. The composition according to claim 1 , wherein a proportion of the first repeating unit is from 4 to 8 mol % with respect to total repeating units of the polymer, a proportion of the second repeating unit is from 60 to 75 mol % with respect to the total repeating units of the polymer, and a proportion of the third repeating unit is from 20 to 30 mol % with respect to the total repeating units of the polymer.

Assignees

• Jsr Corp

Inventors

• Komatsu Hiroyuki
• Oda Tomohiro
• Osaki Hitoshi
• Hori Masafumi
• Naruoka Takehiko

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title