External-cavity semiconductor laser

Patent metadata

Field	Value
Publication number	US-11456574-B2
Application number	US-202016849307-A
Country	US
Kind code	B2
Filing date	Apr 15, 2020
Priority date	Apr 16, 2019
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

An external-cavity semiconductor laser includes a semiconductor laser element containing a gallium nitride material, a first lens disposed in an optical path of light emitted from the semiconductor laser element, a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength, a second lens disposed in an optical path of light transmitted through the wavelength selective element, an output coupler disposed in an optical path of light condensed through the second lens, and a light-transmissive protective member bonded to at least one surface of the output coupler. The second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a surface of the output coupler. The protective member covers the surface of the output coupler on which the image is formed.

First claim

What is claimed is:

1. An external-cavity semiconductor laser comprising:
a semiconductor laser element containing a gallium nitride material;
a first lens disposed in an optical path of light emitted from the semiconductor laser element;
a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength;
a second lens disposed in an optical path of light transmitted through the wavelength selective element;
an output coupler disposed in an optical path of light condensed through the second lens, the output coupler having a reflection surface, and a transmission surface opposite the reflection surface; and
a light-transmissive protective member bonded to and facing the reflection surface of the output coupler,
wherein a cavity is located between the semiconductor laser element and the output coupler,
wherein the second lens is configured to cause light transmitted through the second lens and incident on the output coupler to form an image on a portion of the reflection surface of the output coupler, and
wherein the protective member covers the portion of the reflection surface of the output coupler on which the image is formed.

2. The external-cavity semiconductor laser according to claim 1 , wherein the protective member is directly bonded to the output coupler.

3. The external-cavity semiconductor laser according to claim 1 , wherein the second lens comprises an aspheric lens configured to reduce spherical aberration due to refraction when light is incident on the protective member.

4. The external-cavity semiconductor laser according to claim 1 , wherein the at least one surface of the output coupler bonded to the protective member is coated with a multilayer film.

5. The external-cavity semiconductor laser according to claim 1 , wherein the protective member is provided with a configuration that allows the protective member to have a reflectance lower than a reflectance determined from a refractive index of a material constituting the protective member.

6. The external-cavity semiconductor laser according to claim 1 , wherein the protective member has a thickness in a range of 0.3 mm to 3.5 mm.

7. The external-cavity semiconductor laser according to claim 1 , further comprising an actuator disposed in the cavity.

8. The external-cavity semiconductor laser according to claim 1 , wherein the semiconductor laser has a peak emission wavelength in a range of 360 nm to 520 nm.

9. The external-cavity semiconductor laser according to claim 1 , wherein the wavelength selective element comprises an interference filter.

10. The external-cavity semiconductor laser according to claim 1 , wherein the semiconductor laser element comprises a nitride semiconductor represented as In X Al Y Ga 1-X-Y N, where 0≤X, 0≤Y, and X+Y<1.

11. The external-cavity semiconductor laser according to claim claim 10 , wherein an anti-reflection coating is disclosed on an end surface of the semiconductor laser element.

12. The external-cavity semiconductor laser according to claim 1 , wherein the protective member has a disc shape.

13. An external-cavity semiconductor laser comprising:
a semiconductor laser element containing a gallium nitride material;
a first lens disposed in an optical path of light emitted from the semiconductor laser element;
a wavelength selective element disposed in an optical path of light transmitted through the first lens and configured to selectively transmit light having a predetermined wavelength;
a second lens disposed in an optical path of light transmitted through the wavelength selective element;
an output coupler disposed in an optical path of light condensed through the second lens, the output coupler having a reflection surface, and a transmission surface opposite the reflection surface; and
a light-transmissive protective member having a first surface in which a recess is located, wherein a portion of the first surface that surrounds the recess is bonded to and faces the reflection surface of the output coupler such that the recess is sealed in a dust-free manner,
wherein a cavity is located between the semiconductor laser element and the output coupler,
wherein the second lens is configured to cause light to form an image on the output coupler, and
wherein at least the output coupler is disposed in the cavity.

14. The external-cavity semiconductor laser according to claim 13 , further comprising an actuator disposed in the cavity.

15. The external-cavity semiconductor laser according to claim 13 , wherein the semiconductor laser has a peak emission wavelength in a range of 360 nm to 520 nm.

16. The external-cavity semiconductor laser according to claim 13 , wherein the wavelength selective element comprises an interference filter.

17. The external-cavity semiconductor laser according to claim 13 , wherein the semiconductor laser element comprises a nitride semiconductor represented as In X Al Y Ga 1-X-Y N, where 0≤X, 0≤Y, and X+Y<1.

18. The external-cavity semiconductor laser according to claim 17 , wherein an anti-reflection coating is disposed on an end surface of the semiconductor laser element.

19. The external-cavity semiconductor laser according to claim 13 , wherein the protective member has a thickness in a range of 0.3 mm to 3.5 mm.

Assignees

• Nichia Corp

Inventors

• Takano Tetsushi
• Ogawa Hisashi
• Katori Hidetoshi
• Takamoto Masao

Classifications

• H01S5/32341

  blue laser based on GaN or GaP · CPC title

• H01S3/08027

  by a filter, e.g. a Fabry-Perot filter is used for wavelength setting · CPC title

• H01S5/02208

  characterised by the shape of the housings · CPC title

• H01S5/028

  Coatings {; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers} · CPC title

• G02B5/285

  comprising deposited thin solid films (G02B5/281 - G02B5/289 take precedence; multilayered film filters for fibre optic multiplexing G02B6/29361) · CPC title