Cleaning solution and method of cleaning wafer

Patent metadata

Field	Value
Publication number	US-11456170-B2
Application number	US-202016780791-A
Country	US
Kind code	B2
Filing date	Feb 3, 2020
Priority date	Apr 15, 2019
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

A cleaning solution includes a first solvent having Hansen solubility parameters 25>δd>13, 25>δp>3, and 30>δh>4; an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.

First claim

What is claimed is:

1. A method of cleaning a semiconductor substrate, comprising:
applying a first cleaning solution to a semiconductor substrate,
wherein the first cleaning solution, comprises:
a first solvent having Hansen solubility parameters of 25>δ d >13, 25>δ p >3, and 30>δ h >4;
an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40> pKa>9.5; and
a surfactant,
wherein the surfactant is one or more of an ionic surfactant, a non-ionic surfactant, and combinations thereof,
wherein the ionic surfactant is one or more selected from the group consisting of

wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and
the non-ionic surfactant has an A-X or A-X-A-X structure,
wherein when the non-ionic surfactant has the A-X-A-X structure, A is a unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
X includes one or more polar functional groups selected from the group consisting of —OH, ═O, —S—, —P—, —P(O 2 ), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO 2 OH, —SO 2 SH, —SOH, —SO 2 —, —CO—, —CN—, —SO—, —CON—, —NH—, —SO 3 NH—, and SO 2 NH, and
wherein when the non-ionic surfactant has the A-X structure, A is a unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
X includes one or more polar functional groups selected from the group consisting of —S—, —P—, —P(O 2 ), —C(═O)SH, —C(═O)OH, —N—, —C(═O)NH, —SO 2 OH, —SO 2 SH, —SOH, —SO 2 —, —CN—, —SO—, —CON—, —NH—, —SO 3 NH—, and SO 2 NH.

2. The method according to claim 1 , wherein the first cleaning solution is applied to a first main side of the semiconductor substrate.

3. The method according to claim 2 , further comprising applying the first cleaning solution to edges of the semiconductor substrate, wherein the edges extend between the first main side and a second main side of the semiconductor substrate.

4. The method according to claim 2 , further comprising applying a second cleaning solution to the first main side of the semiconductor substrate, wherein the second cleaning solution has a different composition than the first cleaning solution.

5. The method according to claim 4 , wherein the second cleaning solution comprises a solvent having Hansen solubility parameters of 25>δ d >13, 25>δ p >3, and 30>δ h >4.

6. The method according to claim 1 , further comprising applying a photoresist to a second main side of the semiconductor substrate to form a photoresist layer on the second main side of the semiconductor substrate, wherein the second main side opposes the first main side.

7. The method according to claim 6 , wherein the first cleaning solution is applied to the semiconductor substrate simultaneously with the applying the photoresist to the semiconductor substrate.

8. The method according claim 6 , wherein the first cleaning solution is applied to the semiconductor substrate after the applying the photoresist to the semiconductor substrate.

9. A method of manufacturing a semiconductor device, comprising:
applying a photoresist layer to a first main side of a semiconductor substrate;
applying a first cleaning solution to a second main side of the semiconductor substrate opposing the first main side;
selectively exposing the photoresist layer to actinic radiation,
wherein the first cleaning solution, comprises:
a first solvent having Hansen solubility parameters of 25>δ d >13, 25>δ p >3, and 30>δ h >4;
an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40> pKa>9.5; and
a surfactant,
wherein the surfactant is one or more of an ionic surfactant, a non-ionic surfactant, and combinations thereof,
wherein the ionic surfactant is one or more selected from the group consisting of

wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and
the non-ionic surfactant has an A-X or A-X-A-X structure,
wherein when the non-ionic surfactant has the A-X-A-X structure, A is an unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
X includes one or more polar functional groups selected from the group consisting of —OH, ═O, —S—, —P—, —P(O 2 ), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO 2 OH, —SO 2 SH, —SOH, —SO 2 —, —CO—, —CN—, —SO—, —CON—, —NH—, —SO 3 NH—, and SO 2 NH, and

wherein when the non-ionic surfactant has the A-X structure, A is a unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
X includes one or more polar functional groups selected from the group consisting of —S—, —P—, —P(O 2 ), —C(═O)SH, —C(═O)OH, —N—, —C(═O)NH, —SO 2 OH, —SO 2 SH, —SOH, —SO 2 —, —CN—, —SO—, —CON—, —NH—, —SO 3 NH—, and SO 2 NH.

10. The method according to claim 9 , further comprising developing the selectively exposed photoresist layer, thereby forming a pattern in the photoresist layer that exposes a portion of the semiconductor substrate.

11. The method according to claim 10 , further comprising etching exposed portions of the semiconductor substrate, thereby extending the pattern in the photoresist layer into the semiconductor substrate.

12. A method of manufacturing a semiconductor device, comprising:
applying a photoresist to a first main side of a semiconductor substrate to form a photoresist layer on the first main side of the semiconductor substrate;
applying a first cleaning solution to a second main side of the semiconductor substrate opposing the first main side of the semiconductor substrate or an edge of the semiconductor substrate extending between the first main side and the second main side;
applying a second cleaning solution to the second main side of the semiconductor substrate or the sidewall extending between the first main side and the second main side;
selectively exposing the photoresist layer to actinic radiation,
wherein the first cleaning solution, comprises:
a first solvent having Hansen solubility parameters of 25>δ d >13, 25>δ p >3, and 30>δ h >4;
an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40> pKa>9.5; and
a surfactant,

wherein the surfactant is one or more of an ionic surfactant, a non-ionic surfactant, and combinations thereof,
wherein the ionic surfactant is one or more selected from the group consisting of

wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and
the non-ionic surfactant has an A-X or A-X-A-X structure,
wherein when the non-ionic surfactant has the A-X-A-X structure, A is an unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
X includes one or more polar functional groups selected from the group consisting of —OH, ═O, —S—, —P—, —P(O 2 ), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO 2 OH, —SO 2 SH, —SOH, —SO 2 —, —CO—, —CN—, —SO—, —CON—, —NH—, —SO 3 NH—, and SO 2 NH, and
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Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Zi An-Ren
• Chang Ching-Yu

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P70/00

  Cleaning of wafers, substrates or parts of devices · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title