Acidic aqueous composition for electrolytic copper plating
US-2019203369-A1 · Jul 4, 2019 · US
US11453953B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11453953-B2 |
| Application number | US-201816613209-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 1, 2018 |
| Priority date | Jun 1, 2017 |
| Publication date | Sep 27, 2022 |
| Grant date | Sep 27, 2022 |
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The present invention provides a high-purity electrolytic copper 10 having a Cu purity excluding gas components (O, F, S, C, and Cl) is 99.9999 mass % or more, a content of S is 0.1 mass ppm or less, and an area ratio of crystals having a (101)±10° orientation is less than 40%, when crystal orientation is measured by electron backscatter diffraction in a cross section along a thickness direction.
Opening claim text (preview).
The invention claimed is: 1. A high-purity electrolytic copper, wherein a Cu purity excluding gas components (O, F, S, C, and Cl) is 99.9999 mass % or more, a content of S is 0.1 mass ppm or less, a content of Ag is 0.001 mass ppm or more and 0.1 mass ppm or less, an area ratio of crystals having a (101)±10° orientation is less than 40%, when crystal orientation is measured by electron backscatter diffraction in a cross section along a thickness direction, and a glossiness of a surface of the high-purity electrolytic copper is 2 or more and 4.5 or less. 2. The high-purity electrolytic copper according to claim 1 , wherein an area ratio of crystals having a (111)±10° orientation is less than 15%, when crystal orientation is measured by electron backscatter diffraction in the cross section along the thickness direction. 3. The high-purity electrolytic copper according to claim 1 , wherein an area ratio of crystal grains, in which an aspect ratio b/a represented by a major axis a of the crystal grain and a minor axis b orthogonal to the major axis a is less than 0.33, is less than 40% in the cross section along the thickness direction. 4. The high-purity electrolytic copper according to claim 1 , wherein the Cu purity excluding gas components (O, F, S, C, and Cl) is 99.99999 mass % or more and the content of S is 0.02 mass ppm or less. 5. The high-purity electrolytic copper according to claim 2 , wherein an area ratio of crystal grains, in which an aspect ratio b/a represented by a major axis a of the crystal grain and a minor axis b orthogonal to the major axis a is less than 0.33, is less than 40% in the cross section along the thickness direction. 6. The high-purity electrolytic copper according to claim 2 , wherein the Cu purity excluding gas components (O, F, S, C, and Cl) is 99.99999 mass % or more and the content of S is 0.02 mass ppm or less. 7. The high-purity electrolytic copper according to claim 3 , wherein the Cu purity excluding gas components (O, F, S, C, and Cl) is 99.99999 mass % or more and the content of S is 0.02 mass ppm or less. 8. The high-purity electrolytic copper according to claim 5 , wherein the Cu purity excluding gas components (O, F, S, C, and Cl) is 99.99999 mass % or more and the content of S is 0.02 mass ppm or less.
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