Cerium oxide coating, its preparation and use

Patent metadata

Field	Value
Publication number	US-11453941-B2
Application number	US-201715444494-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Feb 28, 2017
Publication date	Sep 27, 2022
Grant date	Sep 27, 2022

Abstract

A method for preparing a CeOx coating on a surface of a substrate includes depositing a CeOx coating on the surface by means of a reactive magnetron sputtering from a pure cerium target. The CeOx coating can be transparent for visible light. A method for reducing the adhesion of a tissue material such as from a human to a surface of a medical instrument, for reducing the water condensation and improving the heat transfer performance of a heat exchanger surface of a substrate, and for reducing corrosion of a surface of a substrate includes depositing a CeOx coating on the substrate by means of a reactive magnetron sputtering from a pure cerium target. This provides an environmentally friendly preparation of the CeOx coating with no need for organic solvents or volatile organic compounds. The CeOx coating has good hydrophobicity, enhanced hardness, exceptionally high wear resistance, and superior thermal stability.

First claim

The invention claimed is:

1. A method for preparing a crystallized CeO x coating having a cubic fluorite structure and a thickness of about 10 nm to about 100 nm on a surface of a substrate in an unbalanced magnetron sputtering system comprising a step of depositing the crystallized CeO x coating essentially consisting of Ce 2 O 3 and/or CeO 2 on the surface by means of a reactive magnetron sputtering from a cerium target having a purity of at least about 99.9%, wherein the reactive magnetron sputtering is carried out, in a closed magnetic field coupling arrangement, with a pulsed sputtering voltage applied to the cerium target of about −200 V to about −500 V pulsed in a frequency range of about 100 kHz to about 350 kHz, a pulsed substrate bias voltage of between about −60 V and −100 V, at a temperature between about 20° C. and about 30° C., and with a bias ion current density of between about 1 mA/cm 2 and about 5 mA/cm 2 , wherein the reactive magnetron sputtering is carried out in a deposition chamber filled with a gas mixture of a working gas comprising argon for sputtering the cerium target and a reactive gas comprising oxygen arranged to react with atoms sputtered from the cerium target during the step of depositing of the crystallized CeO x coating on the substrate, and wherein the gas mixture includes an oxygen to argon flow ratio in a range of about 20% to about 100%.

2. The method of claim 1 , wherein the pulsed substrate bias voltage applied to the substrate is pulsed at a frequency of about 250 kHz.

3. The method of claim 1 further comprising a step of cleaning the substrate comprising a step of plasma cleaning before the step of depositing in vacuum.

4. The CeO x coating of claim 1 , wherein the coating is hydrophobic.

5. The CeO x coating of claim 4 , wherein the contact angle for water is about 110° .

6. The CeO x coating of claim 1 , wherein the coating has a hardness of about 18 GPa.

7. The CeO x coating of claim 1 , wherein the coating is transparent for visible light.

8. The CeO x coating of claim 7 , wherein the total transmittance is at least about 90% at 550 nm.

9. The CeO x coating of claim 1 , wherein the coating has a thermal stability up to temperatures of about 900° C. in air.

10. A method for reducing the adhesion of a tissue material to a surface of a medical instrument in an unbalanced magnetron sputtering system comprising depositing a crystallized CeO x coating having a cubic fluorite structure and a thickness of about 10 nm to about 100 nm, said crystallized CeO x coating essentially consisting of Ce 2 O 3 and/or CeO 2 on the surface by means of a reactive magnetron sputtering from a cerium target having a purity of at least about 99.9%, wherein the reactive magnetron sputtering is carried out, in a closed magnetic field coupling arrangement, with a pulsed sputtering voltage applied to the cerium target of about −200 V to about −500 V pulsed in a frequency range of about 100 kHz to about 350 kHz, a pulsed substrate bias voltage of between about −60 V and −100 V, at a temperature between about 20° C. and about 30° C., and with a bias ion current density of between about 1 mA/cm 2 and about 5 mA/cm 2 , wherein the reactive magnetron sputtering is carried out in a deposition chamber filled with a gas mixture of a working gas comprising argon for sputtering the cerium target and a reactive gas comprising oxygen arranged to react with atoms sputtered from the cerium target during the depositing of the crystallized CeO x coating on the substrate, and wherein the gas mixture includes an oxygen to argon flow ratio in a range of about 20% to about 100%.

11. The method of claim 10 , wherein the surface contains a metal or a metal alloy or both of them.

12. The method of claim 10 , wherein the surface is of steel.

13. A method for reducing water condensation and improving heat transfer performance of a heat exchanger surface of a substrate in an unbalanced magnetron sputtering system comprising depositing a crystallized CeO x coating having a cubic fluorite structure and a thickness of about 10 nm to about 100 nm, said crystallized CeO x coating essentially consisting of Ce 2 O 3 and/or CeO 2 on the heat exchanger surface by means of a reactive magnetron sputtering from a cerium target having a purity of at least about 99.9%, wherein the reactive magnetron sputtering is carried out, in a closed magnetic field coupling arrangement, with a pulsed sputtering voltage applied to the cerium target of about −200 V to about −500 V pulsed in a frequency range of about 100 kHz to about 350 kHz, a pulsed substrate bias voltage of between about −60 V and −100 V, at a temperature between about 20° C. and about 30° C., and with a bias ion current density of between about 1 mA/cm 2 and about 5 mA/cm 2 , wherein the reactive magnetron sputtering is carried out in a deposition chamber filled with a gas mixture of a working gas comprising argon for sputtering the cerium target and a reactive gas comprising oxygen arranged to react with atoms sputtered from the cerium target during the deposition of the crystallized CeO x coating on the substrate, and wherein the gas mixture includes an oxygen to argon flow ratio in a range of about 20% to about 100%.

14. A method for reducing corrosion of a surface of a substrate in an unbalanced magnetron sputtering system comprising depositing a crystallized CeO x coating having a cubic fluorite structure and a thickness of about 10 nm to about 100 nm, said crystallized CeO x coating essentially consisting of Ce 2 O 3 and/or CeO 2 on the surface by means of a reactive magnetron sputtering from a cerium target having a purity of at least about 99.9%, wherein the reactive magnetron sputtering is carried out, in a closed magnetic field coupling arrangement, with a pulsed sputtering voltage applied to the cerium target of about −200 V to about −500 V pulsed in a frequency range of about 100 kHz to about 350 kHz, a pulsed substrate bias voltage of between about −60 V and −100 V, at a temperature between about 20° C. and about 30° C., and with a bias ion current density of between about 1 mA/cm 2 and about 5 mA/cm 2 , wherein the reactive magnetron sputtering is carried out in a deposition chamber filled with a gas mixture of a working gas comprising argon for sputtering the cerium target and a reactive gas comprising oxygen arranged to react with atoms sputtered from the cerium target during the depositing of the crystallized CeO x coating on the substrate, and wherein the gas mixture includes an oxygen to argon flow ratio in a range of about 20% to about 100%.

15. The method of claim 14 , wherein reducing corrosion includes increasing hardness, wear resistance, and endurance of the surface.

16. The method of claim 1 , wherein the substrate comprises metal, metal alloy, silicon, or glass.

17. The method of claim 1 , wherein the crystallized CeO x coating essentially consisting of Ce 2 O 3 and/or CeO 2 is deposited with a deposition rate of up to 30 nm/min.

18. The method of claim 3 , wherein the step of plasma cleaning is carried out at a bias voltage from about −300 V to about −600 V for at least 20 minutes.

Assignees

• Univ City Hong Kong

Inventors

• Li Kwok Yan
• Shi Zhen
• Shum Po Wan
• Zhou Zhifeng

Classifications

• C23C14/08 Primary

  Oxides (C23C14/10 takes precedence) · CPC title

• C23C14/021

  Cleaning or etching treatments · CPC title

• C23C14/3485

  using pulsed power to the target · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C23C14/0036

  Reactive sputtering · CPC title