Light emitting device, method of manufacturing same and display device including same

Patent metadata

Field	Value
Publication number	US-11450826-B2
Application number	US-202017083832-A
Country	US
Kind code	B2
Filing date	Oct 29, 2020
Priority date	Aug 3, 2018
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

First claim

What is claimed is:

1. A method of manufacturing a light emitting device, the method comprising:
providing a stack structure comprising
a first electrode and a second electrode facing each other,
an emissive layer disposed between the first electrode and the second electrode and comprising a quantum dot, and
an electron auxiliary layer disposed between the emissive layer and the second electrode,

providing a polymer precursor mixture comprising a thiol compound having at least one thiol group and an unsaturated compound having at least two carbon-carbon unsaturated bonds;
applying the polymer precursor mixture on the second electrode and on the electron auxiliary layer to form a polymer precursor layer; and
polymerizing the thiol compound and the unsaturated compound in the polymer precursor layer to form the light emitting device.

2. The method of claim 1 , wherein the electron auxiliary layer comprises a plurality of nanoparticles.

3. The method of claim 2 , wherein the plurality of nanoparticles comprises a metal oxide having a composition represented by Zn 1-x M x O (wherein, M is Mg, Ca, Zr, W, Li, Ti or a combination thereof and 0≤x≤0.5).

4. The method of claim 1 , wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and wherein the polymer precursor mixture is applied on at least a portion of the second surface of the second electrode and on at least a portion of the surface of the electron auxiliary layer.

5. The method of claim 1 , wherein the quantum dot comprises a Group III-V compound comprising indium and phosphorous, a Group II-VI compound comprising zinc and a chalgen, or a combination thereof.

6. The method of claim 1 , wherein the quantum dot does not comprise cadmium.

7. The method of claim 1 , wherein the polymer precursor mixture further comprises a photo initiator.

8. The method of claim 1 , wherein the polymer precursor mixture does not comprises a (meth)acrylic acid, benzoic acid, 3-butenoic acid, crotonic acid, butyric acid, isobutyric acid, acetic acid, propionic acid, or a combination thereof.

9. The method of claim 1 , wherein the polymerizing of the polymer precursor layer comprises photopolymerization.

10. The method of claim 9 , wherein the photopolymerization comprises irradiating the polymer precursor layer with UV light.

11. The method of claim 1 , wherein the polymerizing of the polymer precursor layer is performed at a temperature of greater than or equal to about 30° C.

12. The method of claim 1 , wherein the polymerizing is performed in an atmosphere without oxygen.

13. The method of claim 2 , wherein the polymer precursor mixture penetrates and diffuses between nanoparticles of the plurality of nanoparticles in the electron auxiliary layer before the polymerizing, during the polymerizing, or a combination thereof.

14. The method of claim 1 , further comprising allowing the stack structure on which the polymer precursor layer is formed to stand for at least 1 minute between the forming of the polymer precursor layer on the stack structure and the polymerizing of the thiol compound and the unsaturated compound in the polymer precursor layer.

15. A method of manufacturing a light emitting device, the method comprising:
providing a stack structure comprising
a first electrode and a second electrode facing each other,
an emissive layer disposed between the first electrode and the second electrode and comprising a quantum dot, and
an electron auxiliary layer disposed between the emissive layer and the second electrode,
providing a polymer precursor mixture comprising a thiol compound having at least one thiol group, an unsaturated compound having at least two carbon-carbon unsaturated bonds, and a photoinitiator;
applying the polymer precursor mixture on the stacked structure to form a polymer precursor layer;
irradiating the polymer precursor layer with UV light, and
polymerizing the thiol compound and the unsaturated compound in the polymer precursor layer to form the light emitting device.

16. The method of claim 15 , wherein the electron auxiliary layer comprises a plurality of nanoparticles.

17. The method of claim 16 , wherein the plurality of nanoparticles comprises a metal oxide having a composition represented by Zn 1-x M x O (wherein, M is Mg, Ca, Zr, W, Li, Ti or a combination thereof and 0≤x≤0.5).

18. The method of claim 15 , wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and wherein the polymer precursor mixture is applied on at least a portion of the second surface of the second electrode or on at least a portion of the surface of the electron auxiliary layer.

19. The method of claim 15 , wherein the polymer precursor mixture does not comprises a (meth)acrylic acid, benzoic acid, 3-butenoic acid, crotonic acid, butyric acid, isobutyric acid, acetic acid, propionic acid, or a combination thereof.

20. The method of claim 15 , wherein the polymerizing of the polymer precursor layer comprises photopolymerization.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Tae Ho
• Yoon Won Sik
• Lee Jeong Hee
• Jang Eun Joo
• Cho Oul

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C09K11/0811

  with zinc or cadmium · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• C09K11/70

  containing phosphorus · CPC title

• H10K50/844

  Encapsulations · CPC title