Light emitting device

Patent metadata

Field	Value
Publication number	US-11450790-B2
Application number	US-202016833552-A
Country	US
Kind code	B2
Filing date	Mar 28, 2020
Priority date	Mar 29, 2019
Publication date	Sep 20, 2022
Grant date	Sep 20, 2022

Abstract

The red light-emitting device includes a light source, a first layer covering at least a portion of the light source and containing a fluoride phosphor converting light emitted from the light source, and a second layer covering at least a portion of the first layer and containing a nitride phosphor converting light emitted from the light source and/or the first layer. An emission intensity ratio at an emission peak wavelength of the light source is greater than 0 and 0.1 or less, and the emission intensity ratio at the wavelength of the maximum emission peak in an emission spectrum of the light-emitting device is greater than 2.8, supposing the reference emission intensity that is the minimum emission intensity within the range of plus or minus 15 nm or 30 nm from the wavelength of the maximum emission peak in the emission spectrum of the light-emitting device is 1.

First claim

What is claimed is:

1. A red light-emitting device comprising:
a light source;
a first layer covering at least a portion of the light source and comprising a fluoride phosphor for wavelength conversion of light emitted from the light source, the fluoride phosphor comprising at least one of a manganese-activated fluoride complex phosphor and a manganese-activated fluorogermanate phosphor; and
a second layer covering at least a portion of the first layer and comprising a nitride phosphor for wavelength conversion of light emitted from the light source and/or the first layer,
wherein,
in a case in which the manganese-activated fluoride complex phosphor is contained and the manganese-activated fluorogermanate phosphor is not contained, a first reference emission intensity is regarded as a minimum emission intensity in a range of 15 nm on both of a long wavelength side and a short wavelength side from a first center that is a wavelength of a first maximum emission peak in an emission spectrum of the light-emitting device, in a case in which the manganese-activated fluorogermanate phosphor is comprised, a second reference emission intensity is regarded as a minimum emission intensity in a range of 30 nm on both of the long wavelength side and the short wavelength side from a second center that is a wavelength of a second maximum emission peak in the emission spectrum of the light-emitting device, and
supposing both the first reference emission intensity and the second reference emission intensity are 1, an emission intensity ratio at an emission peak wavelength of the light source is greater than 0 and 0.1 or less, and an emission intensity ratio at the wavelength of the first maximum emission peak and/or an emission intensity ratio at the wavelength of the second maximum emission peak in the emission spectrum of the light-emitting device is 3.0 or greater and 12.0 or less,
wherein the manganese-activated fluoride complex phosphor has a composition represented by Formula (I) below:
A 2 [M a 1-a Mn 4+ a F 6 ]  (I),

wherein A is at least one ion selected from the group consisting of alkali-metal ions and NH 4 + ,
wherein M a is at least one element selected from the group consisting of group IV elements and group XIV elements, and
wherein “a” satisfies 0<a<0.2,
wherein the manganese-activated fluorogermanate phosphor has a composition represented by any one of Formulae (II-I) and (II-II) below:
3.5MgO·0.5MgF 2 ·GeO 2 :Mn  (II-I)

( i−j )MgO·( j/ 2)M b 2 O 3 ·k MgF 2 ·m CaF 2 ·(1 −n )GeO 2 ·( n/ 2)M c 2 O 3 :z Mn 4+   (II-II)

wherein M b is at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu,
wherein MC is at least one element selected from the group consisting of Al, Ga, and In, and
wherein i, j, k, m, n, and z are numbers respectively satisfying 2≤i≤4, 0≤j<0.5, 0<k<1.5, 0≤m<1.5, 0<n<0.5, and 0<z<0.05,
wherein the nitride phosphor has a composition represented by Formula (III) below:
(Ca 1-s-t Sr s Eu t ) x Al u Si v N w   (III)

wherein s, t, u, v, w, and x are numbers respectively satisfying 0≤s<1, 0<t<1.0, 0<s+t<1.0, 0.8≤x≤1.0, 0.8≤u≤1.2, 0.8≤v≤1.2, 1.9≤u+v≤2.1, and 2.5≤w≤3.5,
wherein the first layer contains a resin or glass, and an amount of the fluoride phosphor in the first layer is in a range of 20 parts by mass or greater and 200 parts by mass or less relative to 100 parts by mass of the resin or glass in the first layer, and
wherein the second layer contains a resin or glass, and an amount of the nitride phosphor in the second layer is in a range of 20 parts by mass or greater and 200 parts by mass or less relative to 100 parts by mass of the resin or glass in the second layer.

2. The light-emitting device according to claim 1 , wherein the light source has an emission peak wavelength in a range of 400 nm or greater and 480 nm or less.

3. The light-emitting device according to claim 1 , wherein the light source comprises a GaN based semiconductor light-emitting element.

4. The light-emitting device according to claim 3 , wherein a total thickness of the first layer and the second layer is larger than a thickness of the light-emitting element.

5. The light-emitting device according to claim 1 , wherein the resin comprises at least one selected from the group consisting of a silicone resin, a modified silicone resin, an epoxy resin, and a modified epoxy resin.

6. The light-emitting device according to claim 1 ,
wherein the second layer is continuously disposed with the first layer, and
wherein a region between the first layer and the second layer is configured as an intermediate region comprising the fluoride phosphor, the nitride phosphor, and a resin or glass.

7. The light-emitting device according to claim 1 , wherein the second layer is in contact with at least a portion of the first layer, the light-emitting device further comprising a light-transmissive body on a surface of the second layer opposite to a surface in contact with the first layer.

8. The light-emitting device according to claim 7 , wherein the light-transmissive body comprises a glass material.

9. The light-emitting device according to claim 1 , further comprising a reflective member in contact with a portion of the light source and a portion of the first layer or a portion of the second layer.

10. The light-emitting device according to claim 1 , wherein a thickness of the first layer in a range of 1 . 1 times or greater and 5 times or less when a thickness of the second layer is 1.

11. The light-emitting device according to claim 10 ,
wherein the second layer is continuously disposed with the first layer, and
wherein a region between the first layer and the second layer is configured as an intermediate region comprising the fluoride phosphor, the nitride phosphor, and a resin or glass.

12. The light-emitting device according to claim 10 , wherein the second layer is in contact with at least a portion of the first layer, the light-emitting device further comprising a light-transmissive body on a surface of the second layer opposite to a surface in contact with the first layer.

13. The light-emitting device according to claim 10 , further comprising a reflective member in contact with a portion of the light source and a portion of the first layer or a portion of the second layer.

14. The light-emitting device according to claim 10 , wherein a total thickness of the first layer and the second layer is larger than a thickness of the light-emitting element.

15. The light-emitting device according to claim 1 , wherein a thickness of the first layer in a range of 0.1 times or greater and 1 times or less when a thickness of the second layer is 1.

16. The light-emitting device according to claim 15 ,
wherein the second layer is continuously disposed with the first layer, and
wherein a region between the first layer and the second layer is configured as an intermediate region comprising the fluoride phosphor, the nitride phosphor, and a resin or glass.

17. The light-emitting device according to claim 15 , wherein the second layer is in contact with at least a portion of the first layer, the light-emitting device further comprising a light-transmissive body on a surface of the second layer opposite to a surface in contact with the first layer.

18. The light-emitting device according to claim 15 , further comprising a reflective member in contact with a portion of the light source and a portion of the first layer or a portion of the second layer.

Assignees

• Nichia Corp

Inventors

• Yamada Chihiro
• Iwakura Daisuke

Classifications

• C09K11/77348

  Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides · CPC title

• C09K11/0883 Primary

  Arsenides; Nitrides; Phosphides · CPC title

• C09K11/665

  with alkali or alkaline earth metals · CPC title

• H01L33/486

  Electricity · mapped topic

• H01L33/505

  Electricity · mapped topic