Copper wire bond solution for reducing thermal stress on an intermittently operable chipset controlling RF application for cooking

Patent metadata

Field	Value
Publication number	US-11444588-B2
Application number	US-201916686471-A
Country	US
Kind code	B2
Filing date	Nov 18, 2019
Priority date	Nov 19, 2018
Publication date	Sep 13, 2022
Grant date	Sep 13, 2022

Abstract

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.

First claim

That which is claimed:

1. An oven comprising:
a cooking chamber configured to receive a food product; and
a radio frequency (RF) heating system configured to provide RF energy into the cooking chamber using solid state electronic components to heat the food product,
wherein the solid state electronic components include power amplifier electronics configured to provide a signal into the cooking chamber via a launcher assembly operably coupled to the cooking chamber via a waveguide assembly,
wherein the power amplifier electronics are configured to control application of RF energy into the cooking chamber at least in part based on a learning procedure that generates a power cycling between high and low powers when the learning procedure is executed,
wherein the power amplifier electronics include:
a semiconductor die on which one or more RF power transistors are fabricated,
an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and
bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network, and

wherein the bonding wires comprise copper bonding wires having a diameter of between about 10 microns and about 100 microns.

2. The oven of claim 1 , wherein the copper bonding wires are formed to include an arcuate section extending out of a plane forming a top surface of both the semiconductor die and the output matching network.

3. The oven of claim 2 , wherein the terminal ends of the copper bonding wires are bent from the arcuate section to be substantially parallel to the top surface of each of the semiconductor die and the output matching network.

4. The oven of claim 3 , wherein the terminal ends of the copper bonding wires are bonded to a pad surface of an output rail of the semiconductor die and a pad surface of a die on which the output matching network is fabricated by wedge bonding.

5. The oven of claim 2 , wherein the terminal ends of the copper bonding wires extend from the arcuate section to be substantially perpendicular to the top surface of each of the semiconductor die and the output matching network.

6. The oven of claim 5 , wherein the terminal ends of the copper bonding wires are bonded to a pad surface of an output rail of the semiconductor die and a pad surface of a die on which the output matching network is fabricated by ball bonding.

7. The oven of claim 1 , wherein the power amplifier electronics further comprise an input matching network, and
wherein an additional instance of the copper bonding wires is provided between an input rail of the semiconductor die and a pad surface of a die on which the input matching network is fabricated.

8. The oven of claim 7 , wherein additional respective instances of the copper bonding wires are provided between an input tab of a package in which the semiconductor die is disposed and the die on which the input matching network is fabricated and between the output tab and a die on which the output matching network is fabricated.

9. The oven of claim 1 , wherein the output matching network is configured to provide impedance matching between a drain/collector impedance of the semiconductor die to about a 50Ω to about 75Ω at the output tab.

10. Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components, the power amplifier electronics being configured to control application of RF energy in cycles between high and low powers, the power amplifier electronics comprising:
a semiconductor die on which one or more RF power transistors are fabricated;
an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab; and
bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network;
wherein the bonding wires comprise copper bonding wires having a diameter of between about 10 microns and about 100 microns.

11. The power amplifier electronics of claim 10 , wherein the copper bonding wires are formed to include an arcuate section extending out of a plane forming a top surface of both the semiconductor die and the output matching network.

12. The power amplifier electronics of claim 11 , wherein the terminal ends of the copper bonding wires are bent from the arcuate section to be substantially parallel to the top surface of each of the semiconductor die and the output matching network.

13. The power amplifier electronics of claim 12 , wherein the terminal ends of the copper bonding wires are bonded to a pad surface of an output rail of the semiconductor die and a pad surface of a die on which the output matching network is fabricated by wedge bonding.

14. The power amplifier electronics of claim 11 , wherein the terminal ends of the copper bonding wires extend from the arcuate section to be substantially perpendicular to the top surface of each of the semiconductor die and the output matching network.

15. The power amplifier electronics of claim 14 , wherein the terminal ends of the copper bonding wires are bonded to a pad surface of an output rail of the semiconductor die and a pad surface of a die on which the output matching network is fabricated by ball bonding.

16. The power amplifier electronics of claim 10 , wherein the power amplifier electronics further comprise an input matching network, and
wherein an additional instance of the copper bonding wires is provided between an input rail of the semiconductor die and a pad surface of a die on which the input matching network is fabricated.

17. The power amplifier electronics of claim 16 , wherein additional respective instances of the copper bonding wires are provided between an input tab of a package in which the semiconductor die is disposed and the die on which the input matching network is fabricated and between the output tab and the die on which the output matching network is fabricated.

18. The power amplifier electronics of claim 10 , wherein the output matching network is configured to provide impedance matching between a drain/collector impedance of the semiconductor die to about a 50Ω to about 75Ω at the output tab.

19. A method of coupling components in power amplifier electronics, the method comprising:
providing a semiconductor die on which one or more RF power transistors are fabricated within a package of power amplifier electronics configured to control application of radio frequency (RF) energy generated using solid state electronic components, the power amplifier electronics being configured to control application of RF energy in cycles between high and low powers;
providing an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab of the package proximate to the semiconductor die; and
operably coupling the one or more RF power transistors of the semiconductor die to the output matching network via copper bonding wires, the copper bonding wires having terminal ends thereof bonded to a respective one of the one or more RF power transistors of the semiconductor die and the output matching network,
wherein the bonding wires comprise copper bonding wires having a diameter of between about 10 microns and about 100 microns.

20. The method of clai

Assignees

• Illinois Tool Works

Inventors

• Carcano Marco
• Chirico Daniele
• Sclocchi Michele

Classifications

• H10W72/552

  comprising metals or metalloids, e.g. silver · CPC title

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W72/534

  being rectangular · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/4421

  the principal metal being copper · CPC title