Semiconductor optical amplifier, semiconductor optical amplification device, optical output device, and distance measuring device

US11444436B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11444436-B2
Application numberUS-202016804819-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2020
Priority dateMar 1, 2019
Publication dateSep 13, 2022
Grant dateSep 13, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor optical amplifier comprising: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region, the optical amplification unit amplifying propagation light that propagates, from the light source unit, in the predetermined direction as slow light, the optical amplification unit emitting the propagation light that is amplified in an emission direction that intersects with the surface, wherein maximum optical power of the propagation light is larger than maximum optical power in a vertical oscillation mode. 2. A semiconductor optical amplification device comprising: the semiconductor optical amplifier according to claim 1 ; and a drive unit that drives the semiconductor optical amplifier with driving current such that optical power in a slow light mode becomes larger than optical power in a vertical oscillation mode. 3. An optical output device comprising: the semiconductor optical amplification device according to claim 2 ; and a light condensing unit that condenses light emitted from the semiconductor optical amplification device. 4. A distance measuring device comprising: the semiconductor optical amplification device according to claim 2 ; a light receiving unit that receives light that is emitted from the semiconductor optical amplification device and is reflected from an object to be measured; and a measuring unit that measures the distance to the object based on the light received by the light receiving unit. 5. The semiconductor optical amplification device according to claim 2 , further comprising a temperature control unit that controls temperature of the semiconductor optical amplifier such that the optical power in the slow light mode becomes larger than the optical power in the vertical oscillation mode while the semiconductor optical amplifier being driven. 6. An optical output device comprising: the semiconductor optical amplification device according to claim 5 ; and a light condensing unit that condenses light emitted from the semiconductor optical amplification device. 7. A distance measuring device comprising: the semiconductor optical amplification device according to claim 5 ; a light receiving unit that receives light that is emitted from the semiconductor optical amplification device and is reflected from an object to be measured; and a measuring unit that measures the distance to the object based on the light received by the light receiving unit. 8. The semiconductor optical amplification device according to claim 5 , wherein the temperature control unit controls temperature of the optical amplification unit to prevent oscillation in the vertical oscillation mode. 9. An optical output device comprising: the semiconductor optical amplification device according to claim 8 ; and a light condensing unit that condenses light emitted from the semiconductor optical amplification device. 10. A distance measuring device comprising: the semiconductor optical amplification device according to claim 8 ; a light receiving unit that receives light that is emitted from the semiconductor optical amplification device and is reflected from an object to be measured; and a measuring unit that measures the distance to the object based on the light received by the light receiving unit. 11. The semiconductor optical amplifier according to claim 1 , wherein oscillation in a vertical oscillation mode is prevented. 12. A semiconductor optical amplification device comprising: a substrate; a light source unit that is formed on the substrate; an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region, the optical amplification unit amplifying propagation light that propagates, from the light source unit, in the predetermined direction as slow light, the optical amplification unit emitting the propagation light that is amplified in an emission direction that intersects with the surface; and a drive unit that drives the optical amplification unit with driving current such that optical power in a slow light mode becomes larger than optical power in a vertical oscillation mode. 13. An optical output device comprising: the semiconductor optical amplification device according to claim 12 ; and a light condensing unit that condenses light emitted from the semiconductor optical amplification device. 14. A distance measuring device comprising: the semiconductor optical amplification device according to claim 12 ; a light receiving unit that receives light that is emitted from the semiconductor optical amplification device and is reflected from an object to be measured; and a measuring unit that measures the distance to the object based on the light received by the light receiving unit. 15. A semiconductor optical amplification device comprising: a light source unit that is formed on a substrate; an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region, the optical amplification unit amplifying propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emitting the propagation light that is amplified in an emission direction that intersects with the surface; and a temperature control unit that controls temperature of the optical amplification unit such that optical power in a slow light mode becomes larger than optical power in a vertical oscillation mode while the optical amplification unit being driven. 16. An optical output device comprising: the semiconductor optical amplification device according to claim 15 ; and a light condensing unit that condenses light emitted from the semiconductor optical amplification device. 17. A distance measuring device comprising: the semiconductor optical amplification device according to claim 15 ; a light receiving unit that receives light that is emitted from the semiconductor optical amplification device and is reflected from an object to be measured; and a measuring unit that measures the distance to the object based on the light received by the light receiving unit.

Assignees

Inventors

Classifications

  • Mode suppression, e.g. specific multimode · CPC title

  • for modulating the output, i.e. the laser beam is modulated outside the laser cavity · CPC title

  • H01S5/50Primary

    Amplifier structures not provided for in groups H01S5/02 - H01S5/30 · CPC title

  • Distributed Bragg reflector [DBR] lasers · CPC title

  • H01S5/5018Primary

    using two or more amplifiers or multiple passes through the same amplifier · CPC title

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What does patent US11444436B2 cover?
A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light t…
Who is the assignee on this patent?
Fujifilm Business Innovation Corp, Tokyo Inst Tech
What technology area does this patent fall under?
Primary CPC classification H01S5/50. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 13 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).