Electronic switch

Patent metadata

Field	Value
Publication number	US-11437807-B2
Application number	US-201917427466-A
Country	US
Kind code	B2
Filing date	Dec 20, 2019
Priority date	Jan 31, 2019
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

An electronic switch has a first semiconductor switch arranged between a first source-side terminal and a first consumer-side terminal first, and a switch embodied as a thyristor and arranged between the first consumer-side terminal and a second source-side terminal. The switch is configured to generate a thermal overload from a short-circuit current produced when the switch closes. The thermal overload causes the first semiconductor switch to irreversibly transition into an open state due to a modification inside the first semiconductor switch caused by the thermal overload. This improves the switching behavior of the electronic switch in the event of a fault. Furthermore, an electrical network with at least one electronic switch connected to an energy source and a method for operating such an electronic switch or such an electrical network is also described.

First claim

What is claimed is:

1. An electronic switch, comprising:
a first consumer-side terminal;
a first source-side terminal and a second source-side terminal;
a first semiconductor switch arranged between the first source-side terminal and the first consumer-side terminal;
a second semiconductor switch and a second consumer-side terminal, wherein the second semiconductor switch is arranged between the second source-side terminal and the second consumer-side terminal; and
a switch embodied as a thyristor and arranged between the first consumer-side terminal and the second consumer-side terminal, with the switch being configured to generate a thermal overload from a short-circuit current produced when the switch closes,
wherein the thermal overload causes at least one of the first and the second semiconductor switches to irreversibly transition into an open state due to a modification inside the at least one first and second semiconductor switch caused by the thermal overload.

2. The electronic switch of claim 1 , wherein the at least one first and second semiconductor switch has a modular construction and comprises bonding wires, with the irreversible transition into the open state taking place by melting the bonding wires.

3. The electronic switch of claim 1 , wherein the first semiconductor switch comprises bonding wires.

4. The electronic switch of claim 1 , wherein the second semiconductor switch comprises bonding wires.

5. An electrical network, comprising:
an energy source, and
at least one electronic switch having
a first source-side terminal and a second source-side terminal connected to the energy source, and a first consumer-side terminal,
a first semiconductor switch being arranged between the first source-side terminal and the first consumer-side terminal,
a second semiconductor switch and a second consumer-side terminal, wherein the second semiconductor switch is arranged between the second source-side terminal and the second consumer-side terminal, and
a switch embodied as a thyristor and arranged between the first consumer-side terminal and the second consumer side terminal, with the switch being configured to generate a thermal overload from a short-circuit current produced when the switch closes,
wherein the thermal overload causes at least one of the first and the second semiconductor switches to irreversibly transition into an open state due a modification inside the at least one first and second semiconductor switch caused by the thermal overload.

6. The electrical network of claim 5 , wherein the electrical network is embodied as a DC voltage network or AC voltage network, in particular as a three-phase network.

7. The electrical network of claim 5 , comprising at least one electrical consumer.

8. A method for operating at least one electronic switch or an electrical network comprising the at least one electronic switch, the method comprising:
connecting a first semiconductor switch between a first source-side terminal connected to an energy source and a first consumer-side terminal;
connecting a second semiconductor switch between a second source-side terminal connected to the energy source and a second consumer-side terminal;
connecting a switch embodied as a thyristor between the first consumer-side terminal and the second consumer-side terminal; and
generating with the switch a thermal overload from a short-circuit current produced when the switch closes, with the thermal overload causing at least one, of the first and the second semiconductor switches to irreversibly transition into an open state due to a modification of the at least one first and second semiconductor switch.

Assignees

• Siemens Ag

Inventors

• Schierling Hubert

Classifications

• H03K17/0828 Primary

  in composite switches · CPC title

• H03K2217/0054

  Gating switches, e.g. pass gates · CPC title

• H02H3/023

  by short-circuiting · CPC title

• H02H5/047 Primary

  using a temperature responsive switch · CPC title

• H03K2217/0009

  AC switches, i.e. delivering AC power to a load · CPC title