Resistive switching memory device based on multi-inputs

Patent metadata

Field	Value
Publication number	US-11437570-B2
Application number	US-202016932029-A
Country	US
Kind code	B2
Filing date	Jul 17, 2020
Priority date	Aug 16, 2019
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.

First claim

What is claimed is:

1. A resistive switching memory device comprising:
a first electrode;
a second electrode formed to be separated from the first electrode; and
an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode,
wherein when the external humidity becomes equal to or greater than a predetermined write humidity value, the insulating layer is changed to the low resistance state as the conductive filament is formed by allowing hydrogen ions that increase corresponding to conductivity of hydrogen ions increasing on the insulating layer to lower an oxidization/reduction potential of metal ions.

2. The resistive switching memory device of claim 1 , wherein
in the low resistance state, the insulating layer maintains the low resistance state when the external humidity changes to one humidity value in a range of a predetermined erase humidity value to the write humidity value.

3. The resistive switching memory device of claim 2 , wherein
when the external humidity becomes equal to or less than the erase humidity value, the conductive filament becomes disconnected and the insulating layer is changed to the high resistance state.

4. The resistive switching memory device of claim 1 , wherein
when a positive voltage that is equal to or greater than a predetermined write voltage level is applied to the first electrode, the conductive filament is formed, and the insulating layer is changed to the low resistance state.

5. The resistive switching memory device of claim 1 , wherein
when a negative voltage that is equal to or less than a predetermined erase voltage level is applied to the first electrode, the conductive filament becomes disconnected and the insulating layer is changed to a high resistance state.

6. The resistive switching memory device of claim 1 , wherein
the first electrode is formed on an upper side of the insulating layer, and the second electrode is formed on a lower side of the insulating layer.

7. The resistive switching memory device of claim 1 , wherein
the first electrode and the second electrode are formed on an upper side or a lower side of the insulating layer.

8. A resistive switching memory device comprising:
a first electrode;
a second electrode formed to be separated from the first electrode; and
an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity.

9. The resistive switching memory device of claim 8 , wherein
when the external humidity becomes equal to or greater than a predetermined write humidity value, the insulating layer is changed to the low resistance state as the conductive filament is formed by allowing hydrogen ions that increase corresponding to conductivity of hydrogen ions increasing on the insulating layer to lower an oxidization/reduction potential of metal ions.

10. The resistive switching memory device of claim 9 , wherein
in the low resistance state, the insulating layer maintains the low resistance state when the external humidity is changed to one humidity value in a range of a predetermined erase humidity value to the write humidity value.

11. The resistive switching memory device of claim 10 , wherein
the conductive filament becomes disconnected and the insulating layer is changed to the high resistance state when the external humidity becomes equal to or less than the erase humidity value.

12. The resistive switching memory device of claim 8 , wherein
the insulating layer includes a tyrosine-based peptide material with at least one peptide bond.

Assignees

• Yonsei Univ Univ Industry Foundation Uif
• Seoul Nat Univ R&Db Foundation
• Yonsei Univ Univ—Industry Foundation Uif

Inventors

• Nam Ki Tae
• Cho Ouk Hyun
• Kwon Jang-Yeon
• Song Min-Kyu
• Namgung Seok
• Kim Hyeohn
• Lee Yoon Ho

Classifications

• G11C13/0069

  Writing or programming circuits or methods · CPC title

• G11C13/0009 Primary

  RRAM elements whose operation depends upon chemical change · CPC title

• G11C13/0019

  comprising bio-molecules · CPC title

• H01L45/1266

  Electricity · mapped topic

• H01L45/085 Primary

  Electricity · mapped topic