Wearable brain interface systems including a headgear and a plurality of photodetector units each housing a photodetector configured to be controlled by a master control unit

Patent metadata

Field	Value
Publication number	US-11437538-B2
Application number	US-202117213664-A
Country	US
Kind code	B2
Filing date	Mar 26, 2021
Priority date	May 17, 2018
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

An illustrative wearable brain interface system includes a headgear configured to be worn on a head of a user and a plurality of photodetector units configured to attach to the headgear, the photodetector units each housing a photodetector included in a plurality of photodetectors configured to be controlled by a master control unit to detect photons of light.

First claim

What is claimed is:

1. A wearable brain interface system comprising:
a headgear configured to be worn on a head of a user; and
a plurality of photodetector units configured to attach to the headgear, the photodetector units each housing a photodetector included in a plurality of photodetectors configured to be controlled by a master control unit to detect photons of light.

2. The wearable brain interface system of claim 1 , further comprising a light source configured to generate the light.

3. The wearable brain interface system of claim 2 , wherein the light source comprises an individual light source included in each of the photodetector units.

4. The wearable brain interface system of claim 2 , wherein the light source is included in the master control unit.

5. The wearable brain interface system of claim 1 , wherein:
the headgear comprises a plurality of cutouts; and
the photodetector units are configured to fit within the cutouts.

6. The wearable brain interface system of claim 5 , wherein each cutout included in the plurality of cutouts is surrounded by a rigid ring embedded within the headgear and configured to facilitate attachment of the photodetector units to the headgear.

7. The wearable brain interface system of claim 1 , wherein:
the headgear comprises a plurality of protrusions; and
the photodetector units are configured to attach to the protrusions.

8. The wearable brain interface system of claim 7 , wherein each protrusion comprises a rigid ring configured to facilitate attachment of the photodetector units to the headgear.

9. The wearable brain interface system of claim 1 , wherein the master control unit is coupled to each of the photodetector units by way of a plurality of wires, wherein the wires are at least partially tunneled from the photodetector units to the master control unit within a material of the headgear.

10. The wearable brain interface system of claim 1 , wherein the master control unit is located within the headgear.

11. The wearable brain interface system of claim 1 , wherein the master control unit is configured to be worn off the head of the user.

12. The wearable brain interface system of claim 1 , further comprising a power source configured to be worn off the head of the user, the power source configured to provide power for the master control unit and the photodetector units.

13. The wearable brain interface system of claim 1 , further comprising a power source configured to be worn on a shoulder of the user or on a waist of the user, the power source configured to provide power for the master control unit and the photodetector units.

14. The wearable brain interface system of claim 13 , further comprising a power cable that connects to an input power port of the master control unit and to the power source.

15. The wearable brain interface system of claim 1 , wherein the headgear is implemented by a cap, a beanie, a helmet, or a headband.

16. The wearable brain interface system of claim 1 , wherein the photodetector comprises:
a single photon avalanche diode (SPAD); and
a capacitor configured to
be charged, while the SPAD is in a disarmed state, with a bias voltage by a voltage source, and
supply, when the SPAD is put in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.

17. The wearable brain interface system of claim 16 , wherein the capacitor is configured to supply the bias voltage to the output node of the SPAD while the capacitor is disconnected from the voltage source.

18. The wearable brain interface system of claim 16 , wherein the photodetector further comprises:
an additional voltage source connected to an input node of the SPAD and configured to supply a reverse bias voltage at the input node, the reverse bias voltage having a magnitude that is equal to or less than the breakdown voltage of the SPAD, wherein the voltage source is configured to selectively connect to the capacitor to charge the capacitor with the bias voltage, the bias voltage being an excess bias voltage that has a magnitude that is less than the magnitude of the reverse bias voltage supplied by the additional voltage source; and
a switch configuration configured to put the SPAD into the armed state by connecting the capacitor to an output node of the SPAD while the capacitor is charged with the excess bias voltage and while the capacitor is disconnected from the voltage source;
wherein, when the capacitor is connected to the output node of the SPAD, the capacitor is configured to supply the excess bias voltage to the output node of the SPAD such that a voltage across the SPAD is greater than the breakdown voltage.

19. The wearable brain interface system of claim 16 , wherein:
the capacitor is connected to an output node of the SPAD;
the voltage source is configured to selectively connect to the capacitor to charge the capacitor with the bias voltage, the bias voltage having a magnitude that is equal to or less than a breakdown voltage of the SPAD; and
the photodetector further comprises:
an additional voltage source configured to supply a reverse excess bias voltage having a magnitude that is less than the magnitude of the bias voltage; and
a switch configuration configured to put the SPAD into the armed state by connecting the additional voltage source to an input node of the SPAD while the capacitor is both charged with the bias voltage and disconnected from the voltage source.

20. The wearable brain interface system of claim 1 , wherein the photodetector units are configured to removably attach to the headgear.

21. A wearable brain interface system comprising:
a plurality of photodetector units configured to attach to headgear wearable by a user, the photodetector units each including a photodetector that comprises
a single photon avalanche diode (SPAD); and
a capacitor configured to
be charged, while the SPAD is in a disarmed state, with a bias voltage by a voltage source, and
supply, when the SPAD is put in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.

22. The wearable brain interface system of claim 21 , further comprising a light source configured to generate light, wherein the photodetector is configured to detect photons of the light after the photons reflect from a target within the user.

23. The wearable brain interface system of claim 22 , wherein the light source comprises an individual light source included in each of the photodetector units.

24. The wearable brain interface system of claim 21 , further comprising a master control unit coupled to each of the photodetector units and configured to control the photodetector units.

25. The wearable brain interface system of claim 21 , wherein:
the headgear comprises a plurality of cutouts; and
the photodetector units are configured to fit within the cutouts.

26. The wearable brain interface system of claim 21 , wherein:
the headgear comprises a plurality of protrusions; and
the photodetector units are configured to attach to the protrusions.

27. The wearable brain interface system of claim 21 , wherein the capacitor is configured to supply the bias voltage to the output node of the SPAD while the capacitor is disconnected from the voltage source.

Assignees

• Hi Llc

Inventors

• Katnani Husam
• Field Ryan
• Do Valle Bruno
• Jin Rong
• Dahle Jacob

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N5/225

  Electricity · mapped topic

• H01L31/02027

  Electricity · mapped topic

• H01L31/035272

  Electricity · mapped topic