Light-emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11437427-B2
Application number	US-202016750227-A
Country	US
Kind code	B2
Filing date	Jan 23, 2020
Priority date	Jan 24, 2019
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate, comprising an upper surface;
a first light-emitting unit and a second light-emitting unit, formed on the upper surface, wherein each of the first light-emitting unit and the second light-emitting unit comprises a lower semiconductor portion and an upper semiconductor portion; and
a conductive structure electrically connecting the first light-emitting unit and the second light-emitting unit;
wherein the lower semiconductor portion of the first light-emitting unit comprises a first side wall and a first upper surface; and
wherein the first side wall comprises a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

2. The light-emitting device according to claim 1 , wherein the first sub-side wall and the second sub-side wall are connected.

3. The light-emitting device according to claim 1 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a second side wall facing the second light-emitting unit, and the conductive structure is formed on the second side wall and the second light-emitting unit; and wherein an acute angle is formed between the second side wall and the upper surface.

4. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises a lower edge; and
the lower edge of the second side wall is closer to the second light-emitting unit than the lower edge of the first side wall.

5. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises an upper edge; and
the upper edge of the second side wall is closer to the second light-emitting unit than the upper edge of the first side wall.

6. The light-emitting device according to claim 3 , wherein:
the first light-emitting unit and the second light-emitting unit are adjacent;
the first side wall faces the second light-emitting unit;
each of the first side wall and the second side wall comprises an upper edge; and
the upper edge of the first side wall and the upper edge of the second side wall are aligned.

7. The light-emitting device according to claim 3 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a clamped surface between the first side wall and the second side wall, and the clamped surface substantially has a triangular shape with an edge connecting the upper surface.

8. The light-emitting device according to claim 3 , further comprising an insulator under the conductive structure.

9. The light-emitting device according to claim 8 , wherein the substrate comprises a plurality of patterned structures on the upper surface; and the patterned structures under the insulator and the patterned structures not under the insulator have different sizes and/or different shapes.

10. The light-emitting device according to claim 8 , wherein the insulator comprises middle portion on the second side wall and an extending portion on the upper semiconductor portion of the first light-emitting unit, and a width of the middle portion is greater than that of the extending portion.

11. The light-emitting device according to claim 3 , wherein in a top view, a length of the second side wall extending on an edge of the first light-emitting unit is equal to a length of the edge.

12. The light-emitting device according to claim 3 , wherein the conductive structure comprises a connection electrode on the second side wall and an extending electrode on the upper semiconductor portion of the first light-emitting unit.

13. The light-emitting device according to claim 1 , wherein the second sub-side wall is between the first sub-side wall and the substrate, and the second sub-side wall comprises a rugged surface with concaves and convexes.

14. The light-emitting device according to claim 13 , wherein the first sub-side wall is even.

15. A light-emitting device, comprising:
a substrate, comprising an upper surface;
a first light-emitting unit and a second light-emitting unit, formed on the upper surface, wherein each of the first light-emitting unit and the second light-emitting unit comprises a lower semiconductor portion and an upper semiconductor portion; and
a conductive structure, electrically connecting the first light-emitting unit and the second light-emitting unit;
wherein the lower semiconductor portion of the first light-emitting unit comprises a first side wall, adjacent to a periphery of the light-emitting device;
wherein an included angle between the first side wall and the upper surface is an obtuse angle; and
wherein in a side view, the first side wall has a parallelogram-like shape or a parallelogram shape with a pair of diagonal angles having a first acute angle and a second acute angle.

16. The light-emitting device of claim 15 , wherein the lower semiconductor portion of the first light-emitting unit further comprises a second side wall facing the second light-emitting unit; and an included angle between the second side wall and the upper surface is an acute angle.

17. The light-emitting device of claim 16 , wherein the conductive structure is formed on the second side wall.

18. The light-emitting device of claim 15 , wherein a difference between the first acute angle and the second acute angle is smaller than 40 degrees.

19. The light-emitting device of claim 15 , wherein the lower semiconductor portion of the second light-emitting unit comprises a third side wall adjacent to the periphery of the light-emitting device; wherein an obtuse angle is between the third side wall and the upper surface; and in a side view, the third side wall is a trapezoid.

20. The light-emitting device of claim 15 , wherein the first side wall comprises a first sub-side wall and a second sub-side wall connected to the first sub-side wall.

Assignees

• Epistar Corp

Inventors

• Chiu Po-Shun
• Chiang Tsung-Hsun
• Chi Liang-Sheng
• Jiang Jing
• Chen Jie
• Yeh Tzung-Shiun
• Wang Hsin-Ying
• Yeh Hui-Chun
• Shen Chien-Fu

Classifications

• F21K9/00

  Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers · CPC title

• H01L33/36

  Electricity · mapped topic

• H01L27/153 Primary

  Electricity · mapped topic

• H01L33/62

  Electricity · mapped topic

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title