Substrate processing method

Patent metadata

Field	Value
Publication number	US-11437229-B2
Application number	US-201816960106-A
Country	US
Kind code	B2
Filing date	Nov 19, 2018
Priority date	Jan 9, 2018
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A substrate processing method and a substrate processing apparatus are provided, which solve problems of pattern collapse and particles. The substrate processing method includes: a surface modification step of modifying a surface of a substrate having an oxide thereon to improve or reduce roughness of the surface; a surface cleaning step of supplying a treatment liquid to the modified surface of the substrate to clean the surface of the substrate with the treatment liquid; and a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate.

First claim

The invention claimed is:

1. A substrate processing method comprising:
a surface modification step of modifying a surface of a substrate having an oxide thereon to reduce a roughness of the surface attributable to the oxide;
a surface cleaning step of supplying a treatment liquid to the modified surface of the substrate to clean the surface of the substrate with the treatment liquid; and
a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate,
wherein the surface modification step comprises a thermal modification step of heating the substrate to modify the surface, the thermal modification step including a thermal treatment that supplies thermal energy to the substrate that is effective to brake bonds between a material of the substrate and oxygen so that the oxide on the surface is decomposed and recombined in a manner that is effective to thereby reduce the roughness attributable to the oxide.

2. The substrate processing method according to claim 1 , wherein the thermal modification step comprises a thermal removal step of removing at least a portion of the oxide from the surface of the substrate by the heating.

3. The substrate processing method according to claim 1 , further comprising a cooling step of cooling the substrate after the thermal modification step,
wherein the surface cleaning step is performed on the substrate after the cooling step.

4. The substrate processing method according to claim 1 , further comprising an atmosphere control step of controlling an atmosphere around the substrate to a low-oxygen atmosphere having a lower oxygen concentration than atmospheric air during a period from the surface cleaning step to the hydrophobization step.

5. The substrate processing method according to claim 4 , wherein the low-oxygen atmosphere is an atmosphere having an oxygen concentration that does not permit dissolution of oxygen in the treatment liquid.

6. The substrate processing method according to claim 4 , wherein the atmosphere control step comprises a shield placement step of placing a shield in a position close to the surface of the substrate in opposed relation to the surface of the substrate, and an inert gas supply step of supplying an inert gas between the shield and the surface of the substrate.

7. The substrate processing method according to claim 6 ,
wherein the shield comprises an opposing portion to be opposed to the surface of the substrate, and an annular extension portion connected to a peripheral portion of the opposing portion to surround a periphery of the substrate,
wherein the extension portion is opposed to the periphery of the substrate in the atmosphere control step.

8. The substrate processing method according to claim 1 ,
wherein the surface modification step comprises an oxide removal step of removing the oxide from the surface of the substrate,
wherein the surface cleaning step comprises the step of supplying the treatment liquid to the oxide-removed surface of the substrate to clean the surface of the substrate with the treatment liquid,
the substrate processing method further comprising an atmosphere control step of controlling an atmosphere around the substrate to a low-oxygen atmosphere having a lower oxygen concentration than atmospheric air during a period from the surface cleaning step to the hydrophobization step.

9. The substrate processing method according to claim 8 , wherein the oxide removal step comprises a chemical removal step of supplying a chemical liquid to the surface of the substrate to remove the oxide.

10. The substrate processing method according to claim 9 , wherein the chemical liquid has a dissolved oxygen concentration of not higher than 100 ppb.

11. The substrate processing method according to claim 8 , wherein the oxide removal step comprises a thermal removal step of removing at least a portion of the oxide from the surface of the substrate by heating.

12. The substrate processing method according to claim 1 , wherein the surface cleaning step comprises a chemical liquid cleaning step of supplying a cleaning chemical liquid to the surface of the substrate, and a rinsing step of supplying a rinse liquid to the surface of the substrate to replace the chemical liquid with the rinse liquid.

13. The substrate processing method according to claim 1 , wherein the treatment liquid has a dissolved oxygen concentration of not higher than 100 ppb.

14. The substrate processing method according to claim 1 , further comprising a degassing step of degassing the treatment liquid to be supplied to the surface of the substrate to remove oxygen from the treatment liquid,
wherein the treatment liquid subjected to the degassing step is supplied to the surface of the substrate in the surface cleaning step.

15. The substrate processing method according to claim 1 ,
wherein the hydrophobization step comprises a hydrophobizing agent supply step of supplying a liquid hydrophobizing agent comprising a solvent and a hydrophobizing substance dissolved in the solvent,
the substrate processing method further comprising a precedent organic solvent supply step of supplying an organic solvent miscible with the solvent of the hydrophobizing agent to the surface of the substrate before the hydrophobization step after the surface cleaning step.

16. The substrate processing method according to claim 15 , wherein the organic solvent has a dissolved oxygen concentration of not higher than 100 ppb.

17. The substrate processing method according to claim 1 , further comprising a subsequent organic solvent supply step of supplying an organic solvent to the surface of the substrate to wash away an excess amount of the hydrophobizing agent on the substrate after the hydrophobization step.

18. The substrate processing method according to claim 1 , wherein the hydrophobizing agent has a dissolved oxygen concentration of not higher than 100 ppb.

19. The substrate processing method according to claim 1 , further comprising a thermal dehydration step of heating and dehydrating the hydrophobizing agent on the surface of the substrate after the hydrophobization step.

20. A substrate processing method comprising:
a thermal removal step of removing at least a portion of an oxide present on a surface of a substrate by heating so as to reduce roughness of the surface, the thermal removal step including a thermal treatment that supplies thermal energy to the substrate that brakes bonds between a material of the substrate and oxygen;
an oxide film forming step of, after the thermal removal step, forming a new oxide film on the surface of the substrate by introducing an oxygen-containing atmosphere around the substrate;
an atmosphere control step of controlling an atmosphere around the substrate during the oxide film forming step such that the atmosphere contains oxygen higher in concentration than an atmosphere around the substrate during the thermal removal step;
a surface cleaning step of supplying a treatment liquid to the oxide-removed surface of the substrate to clean the surface of the substrate with the treatment liquid; and
a hydrophobization step of supplying a hydrophobizing agent to the cleaned surface of the substrate to hydrophobize the surface of the substrate.

Assignees

• Screen Holdings Co Ltd

Inventors

• Then Pohling
• Kobayashi Kenji
• Fujii Sadamu
• Hinode Taiki

Classifications

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P72/0468

  comprising a chamber adapted to a particular process · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title