Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11435645-B2
Application number	US-202016872805-A
Country	US
Kind code	B2
Filing date	May 12, 2020
Priority date	Jun 25, 2019
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A semiconductor device has a first semiconducting layer including an optical waveguide, a dielectric layer formed on the optical waveguide, and a conductive layer formed on the dielectric layer. A refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a first insulating layer formed on the substrate;
a first semiconductor layer formed on the first insulating layer, wherein the first semiconductor layer includes i) an optical waveguide and ii) a slab portion such that the optical waveguide and the slab portion are formed contiguously without an interface therebetween;
a dielectric layer made of silicon oxide and formed on the optical waveguide;
a conductive layer formed on the dielectric layer;
a second semiconductor layer formed on the conductive layer, wherein the second semiconductor layer includes i) a first portion and ii) a second portion integrally formed with the first portion, wherein the first portion overlaps i) the conductive layer, ii) the dielectric layer, and iii) the optical waveguide of the first semiconductor layer in a top-down view, and wherein the second portion does not overlap i) the conductive layer, ii) the dielectric layer, and iii) the optical waveguide of the first semiconductor layer in the top-down view;
a first plug connected to the slab portion of the first semiconductor layer such that the first plug is electrically connected with the first semiconductor layer;
a second plug connected to the second portion of the second semiconductor layer such that the second plug is electrically connected with the second semiconductor layer; and
a second insulating layer formed on the first insulating layer so that the second insulating layer contacts i) the first semiconductor layer, ii) the dielectric layer, and iii) the conductive layer,
wherein a refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.

2. The semiconductor device according to claim 1 , wherein the refractive index of the material of the conductive layer is 1.5 or more and 2.0 or less.

3. The semiconductor device according to claim 1 , wherein the conductive layer has a transmittance of 60% or more with respect to light having a wavelength of 1.1 μm or more and 1.6 μm or less.

4. The semiconductor device according to claim 1 , wherein the material of the conductive layer is selected from the group consisting of indium tin oxide, titanium oxide, gallium-doped zinc oxide, and indium-gallium-doped zinc oxide.

5. The semiconductor device according to claim 1 , wherein the second semiconductor layer is made of polycrystalline silicon.

6. The semiconductor device according to claim 1 , wherein a conductivity type of the first semiconductor layer and a conductivity type of the second semiconductor layer are n-type.

7. The semiconductor device according to claim 1 , wherein a thickness of the conductive layer is 350 nm or more and 400 nm or less.

8. The semiconductor device according to claim 1 , further comprising a third insulating layer formed on the second insulating layer so that the third insulating layer contacts the second semiconductor layer.

9. The semiconductor device according to claim 8 , wherein a refractive index of a material of each of the first insulating layer, the second insulating layer, and the third insulating layer is smaller than the refractive index of the material of the conductive layer.

10. The semiconductor device according to claim 1 , wherein a refractive index of a material of each of the first insulating layer and the second insulating layer is smaller than the refractive index of the material of the conductive layer.

Assignees

• Renesas Electronics Corp

Inventors

• Iida Tetsuya
• Nakashiba Yasutaka

Classifications

• G02F1/2257 Primary

  the optical waveguides being made of semiconducting material · CPC title

• G02F1/212

  Mach-Zehnder type · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title