Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11435525-B2
Application number	US-202016874176-A
Country	US
Kind code	B2
Filing date	May 14, 2020
Priority date	May 14, 2020
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first insulating film having a first surface and a second surface opposite to the first surface;
a first optical waveguide formed on the first surface of the first insulating film; and
a second optical waveguide formed on the second surface of the first insulating film,
wherein the second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide,
wherein a thickness of the first optical waveguide is greater than a thickness of the second optical waveguide, and
wherein a width of the first optical waveguide is greater than a width of second optical waveguide.

2. The semiconductor device according to claim 1 , wherein a thickness of the first insulating film is equal to or less than a thickness of the second optical waveguide.

3. The semiconductor device according to claim 1 , wherein a thickness of the first insulating film is equal to or less than the thickness of the second optical waveguide.

4. The semiconductor device according to claim 1 ,
wherein the end portion of the first optical waveguide overlaps with an end portion of the second optical waveguide in plan view, and
wherein the other end portion of the first optical waveguide is located on an outer edge of the first insulating film.

5. The semiconductor device according to claim 1 ,
wherein the end portion of the first optical waveguide has a first width and a first thickness, and
wherein the other end portion of the first optical waveguide has a second width greater than the first width and a second thickness greater than the first thickness.

6. The semiconductor device according to claim 1 ,
wherein a first angle formed by a first edge of the second optical waveguide and the second surface of the first insulating film is smaller than a second angle formed by a side surface of the second optical waveguide and the second surface of the first insulating film, and
wherein a second edge of the first optical waveguide is inclined along the first edge of the second optical waveguide.

7. The semiconductor device according to claim 6 ,
wherein the first edge of the first optical waveguide, in plan view, overlaps with the second optical waveguide, and
wherein the second edge of the second optical waveguide, in a plan view, overlaps with the first optical waveguide.

8. The semiconductor device according to claim 7 , wherein the first angle is 35° or more and 55° or less.

9. The semiconductor device according to claim 7 ,
wherein a crystal plane of the first edge of the first optical waveguide is a (111) plane, and
wherein a crystal plane of the second edge of the second optical waveguide is a (111) plane.

10. The semiconductor device according to claim 7 ,
wherein a third edge of the first optical waveguide is located on an opposite side of the first edge in the first optical waveguide, and
wherein the third edge of the first optical waveguide, in plan view, is located on an outer edge of the first insulating film.

11. The semiconductor device according to claim 1 , comprising a third optical waveguide formed on the second surface of the first insulating film,
wherein the third optical waveguide, in plan view, overlaps with the other end portion of the first optical waveguide.

12. The semiconductor device according to claim 1 , comprising a second insulating film formed on the first surface of the first insulating film such that the second insulating film covers the first optical waveguide.

13. A method of manufacturing a semiconductor device, comprising:
(a) providing a semiconductor wafer comprising:
a first semiconductor layer;
a first insulating film formed on the first semiconductor layer; and
a second semiconductor layer formed on the first insulating film;
(b) patterning the first semiconductor layer to form a first optical waveguide; and
(c) patterning the second semiconductor layer to form a second optical waveguide,
wherein the second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide,
wherein a thickness of the first optical waveguide is greater than a thickness of the second optical waveguide, and
wherein a width of the first optical waveguide is greater than a width of second optical waveguide.

14. The method of manufacturing a semiconductor device according to claim 13 , comprising:
(d) forming a multilayer wiring layer on the first insulating film so as to cover the second optical waveguide; and
(e) disposing a support member on the multilayer wiring layer,
wherein the (b) is performed after the (e).

15. The method of manufacturing a semiconductor device according to claim 14 , wherein the first angle is 35° or more and 55° or less.

16. The method of manufacturing a semiconductor device according to claim 14 , wherein a thickness of the first insulating film is smaller than the thickness of the second optical waveguide.

17. The method of manufacturing a semiconductor device according to claim 15 , comprising:
(f) processing a first edge of the first optical waveguide by wet etching method; and
(g) In the step of processing a second edge of the second optical waveguide by wet etching.

18. The method of manufacturing a semiconductor device according to claim 17 ,
wherein a crystal plane of the first edge of the first optical waveguide is a (111) plane, and
wherein a crystal plane of the second edge of the second optical waveguide is a (111) plane.

19. The method of manufacturing a semiconductor device according to claim 15 , wherein the (c) is performed before the (b).

Assignees

• Renesas Electronics Corp

Inventors

• Iida Tetsuya
• Nakashiba Yasutaka

Classifications

• G02B6/4214

  the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device (G02B6/4246 takes precedence) · CPC title

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/241

  Light guide terminations · CPC title

• G02B6/305

  and having an integrated mode-size expanding section, e.g. tapered waveguide · CPC title

• H04B10/671

  for controlling the input optical signal · CPC title