LED chip, LED light emitting substrate, display device and control method thereof

Patent metadata

Field	Value
Publication number	US-11430913-B2
Application number	US-201716063336-A
Country	US
Kind code	B2
Filing date	Dec 7, 2017
Priority date	Apr 12, 2017
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.

First claim

The invention claimed is:

1. A display device, comprising:
a LED light emitting substrate, and
an array of pixel units, each pixel unit comprising a plurality of sub-pixel units, wherein
the LED light emitting substrate comprises a plurality of LED chips and a circuit board, wherein the LED chips comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer, the quantum well layer is located between the N-type semiconductor layer and the P-type semiconductor layer, and the quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ration of greater than or equal to 0.3 in the indium gallium nitride, the LED chips are arranged on the circuit board, and the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips,
each LED chip of the LED light emitting substrate is located within a sub-pixel unit, and
the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength.

2. The display device according to claim 1 , wherein
each pixel unit at least comprises a blue sub-pixel unit, and
a blue filter layer is further arranged on a light exit side of the LED chip corresponding to each blue sub-pixel unit.

3. The display device according to claim 2 , wherein
each pixel unit further comprises a red sub-pixel unit and a green sub-pixel unit, and
a red filter layer is further arranged on a light exit side of the LED chip corresponding to each red sub-pixel unit, and a green filter layer is further arranged on a light exit side of the LED chip corresponding to each green sub-pixel unit.

4. The display device according to claim 2 , further comprises:
a lower polarizing unit, a liquid crystal layer and an upper polarizing unit arranged sequentially in a light exit direction of the LED light emitting substrate, wherein a transmission axis direction of the lower polarizing unit is perpendicular to or in parallel with a transmission axis direction of the upper polarizing unit.

5. The display device according to claim 4 , wherein
at least one of the lower polarizing unit and the upper polarizing unit comprises a metal wire grating.

6. The display device according to claim 5 , wherein
the lower polarizing unit comprises a metal wire grating, and
the metal wire grating is arranged on a light exit side of each LED chip.

7. A method for controlling a display device to achieve color display, wherein the display device comprises:
a LED light emitting substrate, and
an array of pixel units, each pixel unit comprising a blue sub-pixel unit, a green sub-pixel unit and a red sub-pixel unit, wherein
the LED light emitting substrate comprises a plurality of LED chips and a circuit board, wherein the LED chips comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer, the quantum well layer is located between the N-type semiconductor layer and the P-type semiconductor layer, and the quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride, the LED chips are arranged on the circuit board, and the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips,
each LED chip of the LED light emitting substrate is located within a corresponding sub-pixel unit, wherein the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength, and
the method comprising:
inputting a first current into the LED chip disposed within the red sub-pixel unit;
inputting a second current into the LED chip disposed within the green sub-pixel unit; and
inputting a third current into the LED chip disposed within the blue sub-pixel unit, wherein
a current value of the third current is larger than a current value of the first current, but smaller than a current value of the second current.

8. The method according to claim 7 , wherein
the current value of the first current is 0.1 mA,
the current value of the second current is 60 mA, and
the current value of the third current is 8 mA.

9. The method according to claim 8 , wherein
a ratio of duty cycles of the first current, the second current and the third current is 120:1:4.

10. The method according to claim 7 , wherein
the display device further comprises a blue filter layer, a red filter layer and a green filter layer arranged respectively on light exit sides of the LED chips corresponding to each blue sub-pixel unit, each green sub-pixel unit and each red sub-pixel unit.

11. The method according to claim 7 , wherein
the current value of the first current falls in a range of smaller than 0.1 mA
the current value of the second current falls in a range of 25 mA-100 mA; and
the current value of the third current falls in a range of greater than 0.5 mA.

12. The method according to claim 7 , wherein
a duty cycle of the third current is larger than a duty cycle of the second current, but smaller than a duty cycle of the first current.

13. A display device, comprising:
a LED light emitting substrate, and
an array of pixel units, each pixel unit comprising a plurality of sub-pixel units, wherein
the LED light emitting substrate comprises a plurality of LED chips and a circuit board, wherein the LED chips comprises an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer, the quantum well layer is located between the N-type semiconductor layer and the P-type semiconductor layer, and the quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride, the LED chips are arranged on the circuit board, the circuit board comprises a base substrate and a drive circuit arranged on the base substrate for driving the LED chips, and the circuit board comprises a CMOS substrate or a TFT substrate,
each LED chip of the LED light emitting substrate is located within a sub-pixel unit, and
the drive circuit of the LED light emitting substrate is configured to transfer current to each LED chip such that the LED chip emits light of a corresponding wavelength.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Display Tech Co

Inventors

• Wang Huijuan
• Wang Meili
• Lv Zhenhua
• Wang Fei
• Yang Zezhou

Classifications

• H10W90/00

  Package configurations · CPC title

• G09G2300/0426

  Layout of electrodes and connections · CPC title

• G02F1/133548

  Wire-grid polarisers · CPC title

• G09G3/3426

  the different display panel areas being distributed in two dimensions, e.g. matrix · CPC title

• G09G3/3413

  Details of control of colour illumination sources · CPC title