Engineered substrate

Patent metadata

Field	Value
Publication number	US-11430910-B2
Application number	US-201716074348-A
Country	US
Kind code	B2
Filing date	Feb 1, 2017
Priority date	Feb 3, 2016
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

First claim

The invention claimed is:

1. An engineered substrate comprising:
a seed layer made of a first semiconductor material for growth of a solar cell;
a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material, wherein the second semiconductor material is primarily composed of doped or undoped Ge;
a direct bonding interface formed under partial vacuum between the seed layer and the surface layer, wherein the crystal lattice of the seed layer does not match the crystal lattice of the surface layer;
wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm 2 ; and
wherein a doping concentration of the base is below the predetermined value, and the doping concentration of the base and the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, and a total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm 2 .

2. The engineered substrate of claim 1 , further comprising a back side metal contact on a second side of the base opposite to the first side, the back side metal contact serving as a mirror.

3. The engineered substrate of claim 1 , wherein the predetermined value is 10 18 atoms/cm 3 .

4. The engineered substrate of claim 1 , wherein the seed layer has a doping concentration higher than the predetermined value.

5. The engineered substrate of claim 1 , wherein the thickness of the seed layer and/or the surface layer is in a range extending from 150 nm to 1 μm.

6. The engineered substrate of claim 1 , wherein the thickness of the base is in a range extending from 100 μm to 500 μm, and wherein the doping concentration of the base ranges from 1×10 14 -5×10 17 atoms/cm 3 .

7. The engineered substrate of claim 1 , wherein the first semiconductor material has a lattice constant in a range extending from 5.8 Å to 6 Å.

8. The engineered substrate of claim 1 , wherein the first semiconductor material is InP or the first semiconductor material is a ternary or quaternary or penternary III-V material.

9. A solar cell comprising an engineered substrate according to claim 1 .

10. A method of manufacturing an engineered substrate, comprising:
providing a first substrate;
providing a seed layer on the first substrate, the seed layer made of a first semiconductor material;
providing a base substrate;
forming, by epitaxial growth, a surface layer on a first side of the base substrate, the base substrate and the surface layer made of a second semiconductor material, wherein the second semiconductor material is primarily composed of doped or undoped Ge;
directly bonding the seed layer to the surface layer under partial vacuum, thereby providing a direct bonding interface, wherein the crystal lattice of the seed layer does not match the crystal lattice of the surface layer; and
removing the first substrate;
wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm 2 ; and
wherein doping concentration of the base substrate is below the predetermined value, and the doping concentration of the base and the thickness of the engineered substrate are such that both absorption of the engineered substrate is less than 20%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm 2 .

11. The method of claim 10 , further comprising a step of providing a back side metal contact on a second side of the base substrate, the back side metal contact serving as a mirror under the base substrate.

12. The method of claim 10 , further comprising:
an ion implantation step for creating an implantation layer in a part of the first substrate and/or the seed layer before directly bonding the seed layer to the surface layer.

13. The engineered substrate of claim 1 , wherein the electrical resistivity at the direct bonding interface is below 1 mOhm·cm 2 .

14. The engineered substrate of claim 1 , wherein absorption of the engineered substrate is less than 10%.

15. The engineered substrate of claim 1 , wherein the total area-normalized series resistance of the engineered substrate is less than 5 mOhm·cm 2 .

16. The engineered substrate of claim 8 , wherein the first semiconductor material is InGaAs or InGaAsP.

17. The method of claim 10 , wherein the electrical resistivity at the direct bonding interface is below 1 mOhm·cm 2 .

18. The method of claim 10 , wherein absorption of the engineered substrate is less than 10%.

19. The method of claim 10 , wherein the total area-normalized series resistance of the engineered substrate is less than 5 mOhm·cm 2 .

Assignees

• Soitec Silicon On Insulator

Inventors

• Aulnette Cécile
• Dimroth Frank
• Oliva Eduard

Classifications

• H10P10/128 Primary

  by direct semiconductor to semiconductor bonding · CPC title

• H10F77/935

  for photovoltaic devices or modules · CPC title

• H10F77/48

  Back surface reflectors [BSR] · CPC title

• H10F71/1272

  comprising at least three elements, e.g. GaAlAs or InGaAsP · CPC title

• H10F10/163

  comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells · CPC title