Thin film transistor array substrate for digital x-ray detector device and digital x-ray detector device including the same

Patent metadata

Field	Value
Publication number	US-11430826-B2
Application number	US-202017125393-A
Country	US
Kind code	B2
Filing date	Dec 17, 2020
Priority date	Dec 20, 2019
Publication date	Aug 30, 2022
Grant date	Aug 30, 2022

Abstract

A thin film transistor array substrate for a digital X-ray detector device includes a base substrate where a driving area and a non-driving area are defined; at least one readout circuit pad disposed in the non-driving area and electrically connected to the drive area; at least one readout circuit pad connection line electrically connecting the driving area to the at least one readout circuit pad; and at least one electrostatic induction line electrically connected to the at least one readout circuit pad connection line, wherein the at least one electrostatic induction line has a greater resistance than a resistance of the at least one readout circuit pad connection line.

First claim

What is claimed is:

1. A thin film transistor array substrate for a digital X-ray detector device, comprising:
a base substrate where a driving area and a non-driving area are defined;
at least one readout circuit pad disposed in the non-driving area and electrically connected to the drive area;
at least one readout circuit pad connection line electrically connecting the driving area to the at least one readout circuit pad; and
at least one electrostatic induction line electrically connected to the at least one readout circuit pad connection line,
wherein the at least one electrostatic induction line has a greater resistance than a resistance of the at least one readout circuit pad connection line.

2. The thin film transistor array substrate of claim 1 , wherein the at least one electrostatic induction line does not overlap with the at least one readout circuit pad connection line and is disposed between the at least one readout circuit pad connection lines that are adjacent to each other.

3. The thin film transistor array substrate of claim 2 , wherein the at least one electrostatic induction line has a width that is smaller than a width of the at least one readout circuit pad connection line.

4. The thin film transistor array substrate of claim 3 , further comprising at least one capacitor disposed below the at least one electrostatic induction line.

5. The thin film transistor array substrate of claim 2 , wherein the driving area comprises a driving thin film transistor, a PIN diode, and a bias electrode,
wherein the driving thin film transistor comprises an active layer, a first electrode, a second electrode and a gate electrode,
wherein the PIN diode is electrically connected to the driving thin film transistor and comprises an upper electrode, a PIN layer and a lower electrode, and
wherein the bias electrode is electrically connected to the PIN diode.

6. The thin film transistor array substrate of claim 5 , wherein the at least one electrostatic induction line is made of a same material as the bias electrode and disposed on a same layer as the bias electrode.

7. The thin film transistor array substrate of claim 5 , further comprising first and second electrostatic induction capacitor electrodes disposed below the at least one electrostatic induction line.

8. The thin film transistor array substrate of claim 7 , wherein the first electrostatic induction capacitor electrode is made of a same material as the first electrode and the second electrode and is disposed on a same layer as the first electrode and the second electrode.

9. The thin film transistor array substrate of claim 7 , wherein the second electrostatic induction capacitor electrode is made of a same material as the gate electrode and is disposed on a same layer as the gate electrode.

10. The thin film transistor array substrate of claim 1 , wherein the at least one electrostatic induction line overlaps with the at least one readout circuit pad connection line and is disposed below the at least one readout circuit pad connection line.

11. The thin film transistor array substrate of claim 10 , wherein the at least one electrostatic induction line is made of material comprising indium tin oxide (ITO).

12. The thin film transistor array substrate of claim 10 , wherein the at least one electrostatic induction line has a pattern has a repeatedly increased or decreased width.

13. The thin film transistor array substrate of claim 10 , wherein the driving area comprises a driving thin film transistor, a PIN diode, and a bias electrode,
wherein the driving thin film transistor comprises an active layer, a first electrode, a second electrode, and a gate electrode,
wherein the PIN diode is electrically connected to the driving thin film transistor and includes an upper electrode, a PIN layer, and a lower electrode,
wherein the bias electrode is electrically connected to the PIN diode, and
wherein the at least one electrostatic induction line is made of a same material as the upper electrode and is disposed on a same layer as the upper electrode.

14. The thin film transistor array substrate of claim 1 , wherein the at least one electrostatic induction line is further connected below the at least one readout circuit pad.

15. A digital X-ray detector device, comprising:
a base substrate where a driving area and a non-driving area are defined;
at least one readout circuit pad disposed in the non-driving area and electrically connected to the drive area;
at least one readout circuit pad connection line electrically connecting the driving area to the at least one readout circuit pad;
at least one electrostatic induction line electrically connected to the at least one readout circuit pad connection line, wherein the at least one electrostatic induction line has a greater resistance than a resistance of the at least one readout circuit pad connection line;
a readout circuitry configured to be connected to the readout circuit pad;
at least one readout circuitry connection line disposed above the base substrate and configured to electrically connect the readout circuit pad to the readout circuitry; and
a scintillator layer disposed above the thin film transistor array substrate,
wherein the at least one electrostatic induction line is further connected to the at least one readout circuitry connection line.

16. A thin film transistor array substrate having a driving area and a non-driving area for a digital X-ray detector device, comprising:
one or more readout circuit pads disposed in the non-driving area and electrically connected to the drive area;
one or more readout circuit pad connection lines electrically connecting the driving area to the one or more readout circuit pads;
one or more electrostatic induction lines electrically connected to the one or more readout circuit pad connection lines and having a greater resistance than a resistance of the one or more readout circuit pad connection lines; and
one or more capacitors having first and second electrostatic induction capacitor electrodes and disposed below the one or more electrostatic induction lines.

17. The thin film transistor array substrate of claim 16 , wherein the one or more electrostatic induction lines do not overlap with the one or more readout circuit pad connection lines and is disposed between the one or more readout circuit pad connection lines that are adjacent to each other.

18. The thin film transistor array substrate of claim 16 , wherein the one or more electrostatic induction lines have a width that is smaller than a width of the one or more readout circuit pad connection lines.

19. The thin film transistor array substrate of claim 16 , wherein the one or more electrostatic induction lines overlap with the one or more readout circuit pad connection lines and are disposed below the one or more readout circuit pad connection lines.

20. The thin film transistor array substrate of claim 16 , wherein the one or more electrostatic induction lines are further connected below the one or more readout circuit pads.

Assignees

• Lg Display Co Ltd

Inventors

• Kong Minsuk
• Kim Soyoung
• Kang Moonsoo
• Yoon Jaeho

Classifications

• H10D86/40

  characterised by multiple TFTs · CPC title

• G01T1/2018

  Scintillation-photodiode combinations · CPC title

• G01T1/20184

  Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits · CPC title

• G01T1/247

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• G01T1/161

  Applications in the field of nuclear medicine, e.g. in vivo counting {(apparatus for radiation diagnosis A61B6/00)} · CPC title