Vat resin with additives for thiourethane polymer stereolithography printing

US11427718B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11427718-B2
Application numberUS-201816170342-A
CountryUS
Kind codeB2
Filing dateOct 25, 2018
Priority dateOct 27, 2017
Publication dateAug 30, 2022
Grant dateAug 30, 2022

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

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A vat resin for three-dimensional stereolithography printing of a thiourethane polymer part comprising a liquid mixture including a first type of monomer, a second type of monomer, a photolatent base decomposable upon exposure to a light to form a non-nucleophillic base catalyst having a pKa greater than 7, an anionic step-growth polymerization reaction inhibitor having an acidic group configured to form an acid-base pair with the non-nucleophillic base and a light absorber having an absorbance in the liquid mixture that is greater than an absorbance of the photolatent base at a wavelength of the light used for the exposure. Methods of preparing the vat resin and three-dimensional stereolithography printing a thiourethane polymer part using the vat resin are also disclosed.

First claim

Opening claim text (preview).

What is claimed is: 1. A vat resin for three-dimensional stereolithography printing of a thiourethane polymer part comprising: a liquid mixture including: a first type of monomer including two or more thiol functional groups, a second type of monomer including two or more isocyanate functional groups, a photolatent base, wherein the photolatent base is decomposable upon exposure to a light to form a non-nucleophillic base catalyst having a pKa greater than 7; an anionic step-growth polymerization reaction inhibitor, the inhibitor having an acidic group configured to form an acid-base pair with the non-nucleophillic base; and a light absorber having an absorbance in the liquid mixture that is greater than an absorbance of the photolatent base at a wavelength of the light used for the exposure. 2. The vat resin of claim 1 , wherein the vat resin is substantially free of water. 3. The vat resin of claim 1 , wherein a mole ratio of the photolatent base to the anionic step-growth polymerization reaction inhibitor is in a range from about 5:1 to 15:1. 4. The vat resin of claim 1 , wherein the anionic step-growth polymerization reaction inhibitor is a strong organic acid and is non-oxidizing with respect to oxidize the thiol functional groups of the first type of monomer in the liquid mixture. 5. The vat resin of claim 1 , wherein the anionic step-growth polymerization reaction inhibitor includes one or more of octanoic acid, methanesulfonic acid, trifluoromethanesulfonic acid or carboxlic acid. 6. The vat resin of claim 1 , wherein the anionic step-growth polymerization reaction inhibitor includes p-toluenesulfonic acid has a concentration in the liquid mixture in a range from about 0.001 to 0.2 wt %. 7. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has an absorbance that is at least about 1 percent higher than the absorbance of the photolatent base at the wavelength of the light that the vat resin is exposed to. 8. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has molar extinction coefficient of at least about 10000 M −1 cm −1 at the wavelength used to activate the photolatent base. 9. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has a concentration of 1 mM or less and an absorbance of at least about 1 at a wavelength of the light used for the exposure. 10. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has a concentration that is in a range from about 0.001 to 1 wt %. 11. The vat resin of claim 1 , wherein the light absorber in the liquid mixture includes 2,2′-(2,5-thiophenediyl)bis(5-tert-butylbenzoxazole. 12. The vat resin of claim 1 , wherein the photolatent base is or includes 5-(2′-(methyl)thioxanthone)-1,5-diazabicyclo[4.3.0]non-5-ene tetraphenylborate. 13. The vat resin of claim 1 , wherein first type of monomer includes one of more of: 2,2′-(ethylenedioxy)diethanethiol, decanedithiol, hexanedithiol, glycol dimercaptoacetate, glycol dimercaptopropionate, thiobisbenzenethiol, xylene dithiol, pentaerythritol tetramercaptoacetate, pentaerythritol tetramercaptopropionate, dipentaerythritol hexamercaptopropionate, trimethylolpropane trimercaptoacetate, trimethylolpropane trimercaptoacetate, or tris[2-(3-mercaptopropionyloxy)ethyl] isocyanurate. 14. The vat resin of claim 1 , wherein second type of monomer includes one of more of: hexamethylene diisocyanate, trimethylhexamethylene diisocyanate, diisocyanatooctane, isophorone diisocyanate, xylene diisocyanate, toluene diisocyanate, phenylene diisocyanate, bis(isocyanatomethyl)cyclohexane, 4,4′-methylenebis(phenyl isocyanate), 4,4′-methylenebis(cyclohexyl isocyanate), or tris(6-isocyanatohexyl)isocyanurate. 15. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has an absorbance in a range of about 5 to 10 percent higher than the absorbance of the photolatent base at the wavelength of the light that the vat resin is exposed to. 16. The vat resin of claim 1 , wherein the light absorber in the liquid mixture has an absorbance in a range of about 10 to 20 percent higher than the absorbance of the photolatent base at the wavelength of the light that the vat resin is exposed to.

Assignees

Inventors

Classifications

  • Materials specially adapted for additive manufacturing · CPC title

  • acyclic · CPC title

  • Reaction retarding agents · CPC title

  • being toluene diisocyanate including isomer mixtures · CPC title

  • having two nitrogen atoms in the condensed ring system · CPC title

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What does patent US11427718B2 cover?
A vat resin for three-dimensional stereolithography printing of a thiourethane polymer part comprising a liquid mixture including a first type of monomer, a second type of monomer, a photolatent base decomposable upon exposure to a light to form a non-nucleophillic base catalyst having a pKa greater than 7, an anionic step-growth polymerization reaction inhibitor having an acidic group configur…
Who is the assignee on this patent?
Univ Texas, Adaptive 3D Tech
What technology area does this patent fall under?
Primary CPC classification C09D11/101. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Aug 30 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).