Thermoelectric conversion element

Patent metadata

Field	Value
Publication number	US-11417818-B2
Application number	US-201816772020-A
Country	US
Kind code	B2
Filing date	Dec 14, 2018
Priority date	Dec 20, 2017
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

The purpose of the present invention is to make it possible to ensure a strength that allows thermoelectric evaluation to be performed even when sintering is carried out at a temperature lower than the minimum sintering temperature of a power generation layer, in a thermoelectric conversion element. For this purpose, this thermoelectric conversion element is characterized by being provided with a power generation layer and support layers including a sintered body, wherein the power generation layer is provided with a metal-magnetic insulator composite structure in which metal is formed in a net shape around a granulated magnetic body, the support layers are formed so as to be in contact with the top and bottom or the right and left of the power generation layer, and the minimum sintering temperature of the support layers is lower than the minimum sintering temperature of the power generation layer.

First claim

The invention claimed is:

1. A thermoelectric conversion element comprising a support layer including a power generation layer and a sintered body, wherein the power generation layer includes a metal-magnetic body composite structure in which a metal is formed in a net shape, around a granulated magnetic body, the support layer is formed in such a way as to be in contact with a top and a bottom or a left and a right of the power generation layer, and a minimum sintering temperature of the support layer is lower than a minimum sintering temperature of the power generation layer.

2. The thermoelectric conversion element according to claim 1 , wherein the metal exists in a net shape in such a way as to fill a gap between a particle and a particle of the magnetic body.

3. The thermoelectric conversion element according to claim 2 , wherein the support layer is disposed on four sides in such a way as to surround the power generation layer.

4. The thermoelectric conversion element according to claim 2 , wherein the magnetic body has magnetism in an in-plane direction.

5. The thermoelectric conversion element according to claim 2 , wherein the support layer is composed of an insulator material or a semiconductor material of which resistivity is equal to or more than 1Ωm.

6. The thermoelectric conversion element according to claim 2 , wherein a melting point of a material constituting the supporting layer is equal to or more than 600° C. and equal to or less than 1,200° C.

7. The thermoelectric conversion element according to claim 1 , wherein the support layer is disposed on four sides in such a way as to surround the power generation layer.

8. The thermoelectric conversion element according to claim 7 , wherein the magnetic body has magnetism in an in-plane direction.

9. The thermoelectric conversion element according to claim 7 , wherein the support layer is composed of an insulator material or a semiconductor material of which resistivity is equal to or more than 1Ωm.

10. The thermoelectric conversion element according to claim 7 , wherein a melting point of a material constituting the supporting layer is equal to or more than 600° C. and equal to or less than 1,200° C.

11. The thermoelectric conversion element according to claim 1 , wherein the magnetic body has magnetism in an in-plane direction.

12. The thermoelectric conversion element according to claim 11 , wherein the support layer is composed of an insulator material or a semiconductor material of which resistivity is equal to or more than 1Ωm.

13. The thermoelectric conversion element according to claim 11 , wherein a melting point of a material constituting the supporting layer is equal to or more than 600° C. and equal to or less than 1,200° C.

14. The thermoelectric conversion element according to claim 1 , wherein the support layer is composed of an insulator material or a semiconductor material of which resistivity is equal to or more than 1Ωm.

15. The thermoelectric conversion element according to claim 1 , wherein a melting point of a material constituting the supporting layer is equal to or more than 600° C. and equal to or less than 1,200° C.

16. The thermoelectric conversion element according to claim 15 , wherein a material constituting the support layer is Bi2O3.

17. The thermoelectric conversion element according to claim 1 , wherein the metal is composed of a ferromagnetic metal material having magnetism.

18. The thermoelectric conversion element according to claim 17 , wherein the metal has a same magnetization direction as the magnetic body.

19. The thermoelectric conversion element according to claim 1 , wherein a pair of electrodes are provided in the power generation layer.

20. A method of manufacturing a thermoelectric conversion element, comprising: sandwiching a power generation layer powder formed by coating a periphery of a granulated magnetic body with a metal, between support layer powders of which a minimum sintering temperature is lower than a minimum sintering temperature of the power generation layer powder; and press-molding and thereafter sintering.

Assignees

• Nec Corp

Inventors

• Kirihara Akihiro
• Ishida Masahiko

Classifications

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• B22F2998/10

  Processes characterised by the sequence of their steps · CPC title

• C22C2202/02

  Magnetic · CPC title

• B22F7/02

  of composite layers {(B22F7/002 takes precedence)} · CPC title

• B22F7/08 Primary

  with one or more parts not made from powder {(B22F7/062 takes precedence)} · CPC title