MEMS RF-switch with near-zero impact landing

Patent metadata

Field	Value
Publication number	US-11417487-B2
Application number	US-201716343912-A
Country	US
Kind code	B2
Filing date	Sep 14, 2017
Priority date	Sep 29, 2016
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

First claim

What is claimed is:

1. A MEMS ohmic switch ( 300 ), comprising:
a substrate ( 101 ) having one or more anchor electrodes ( 108 ), a plurality of pull-down electrodes ( 104 A- 104 C), a first RF electrode ( 302 ), and a second RF electrode ( 304 ) disposed thereon;
a MEMS bridge coupled to the one or more anchor electrodes ( 108 ) with an anchor contact layer ( 208 );
a dielectric layer ( 202 ) disposed over the plurality of pull-down electrodes ( 104 A- 104 C);
a center stopper ( 314 ) coupled to the dielectric layer ( 202 ) and disposed under a substantially center of the MEMS bridge, wherein the center stopper ( 314 ) is disposed between the first RF electrode ( 302 ) and the second RF electrode ( 304 );
a first RF contact ( 306 ) coupled to the first RF electrode ( 302 ) and a second RF contact ( 308 ) coupled to the second RF electrode ( 304 ); and
a first additional stopper ( 310 ) disposed on the dielectric layer ( 202 ), wherein the first additional stopper ( 310 ) is disposed between the anchor contact layer ( 208 ) and the first RF contact ( 306 ) and wherein the first RF contact ( 306 ) is disposed between the first additional stopper ( 310 ) and the center stopper ( 314 ).

2. The MEMS ohmic switch ( 300 ) of claim 1 , wherein the MEMS bridge is stiff between the center stopper ( 314 ) and the first additional stopper ( 310 ).

3. The MEMS ohmic switch ( 300 ) of claim 1 , wherein the center stopper ( 314 ) extends above the substrate ( 101 ) by a distance that is equal to or greater than a distance the first RF contact ( 306 ) extends above the substrate ( 101 ).

4. The MEMS ohmic switch ( 300 ) of claim 1 , wherein the first additional stopper ( 310 ) extends above the substrate ( 101 ) by a distance that is greater than a distance the first RF contact ( 306 ) extends above the substrate ( 101 ).

5. The MEMS ohmic switch ( 300 ) of claim 1 , wherein the second RF contact ( 308 ) is disposed between the center stopper ( 314 ) and an additional anchor contact layer ( 208 ).

6. The MEMS ohmic switch ( 300 ) of claim 5 , wherein the second additional stopper ( 312 ) is disposed between the anchor contact layer ( 208 ) and the center stopper ( 314 ).

7. The MEMS ohmic switch ( 300 ) of claim 1 , further comprising a second additional stopper ( 312 ) disposed on the dielectric layer ( 202 ).

8. The MEMS ohmic switch ( 300 ) of claim 1 , wherein heights above the substrate ( 101 ) for the first RF contact ( 306 ), center stopper ( 314 ) and the first additional stopper ( 310 ) are set such that upon increasing a voltage on one of the plurality of pull-down electrodes ( 104 A- 104 C), the MEMS bridge first comes into contact with the center stopper ( 314 ), then the first additional stopper ( 310 ) and then the first RF contact ( 306 ) and wherein upon decreasing the voltage to the one of the plurality of pull-down electrodes ( 104 A- 104 C), the MEMS bridge first disengages the first RF contact ( 306 ).

9. The MEMS ohmic switch ( 300 ) of claim 1 , wherein a height above the substrate ( 101 ) for the first RF contact ( 306 ) is set such that upon increasing a voltage applied to one of the plurality of pull-down electrodes ( 104 A- 104 C), the MEMS bridge lands on the first RF contact ( 306 ) without showing a snap-in behavior.

10. A method of operating a MEMS ohmic switch ( 300 ), wherein the switch ( 300 ) includes:
a substrate ( 101 ) having one or more anchor electrodes ( 108 ), a plurality of pull-down electrodes ( 104 A- 104 C), a first RF electrode ( 302 ), and a second RF electrode ( 304 ) disposed thereon;
a MEMS bridge coupled to the one or more anchor electrodes ( 108 ) with an anchor contact layer ( 208 );
a dielectric layer ( 202 ) disposed over the plurality of pull-down electrodes ( 104 A- 104 C);
a center stopper ( 314 ) coupled to the dielectric layer ( 202 ) and disposed under a substantial center of the MEMS bridge, wherein the center stopper ( 314 ) is disposed between the first RF electrode ( 302 ) and the second RF electrode ( 304 );
a first RF contact ( 306 ) coupled to the first RF electrode ( 302 ) and a second RF contact ( 308 ) coupled to the second RF electrode ( 304 ); and
an additional stopper ( 310 ) disposed on the dielectric layer ( 202 ), wherein the additional stopper ( 310 ) is disposed between the anchor contact layer ( 208 ) and the first RF contact ( 306 ) and wherein the first RF contact ( 306 ) is disposed between the additional stopper ( 310 ) and the center stopper ( 314 ), the method comprising:
moving the MEMS bridge a first distance to contact the center stopper ( 314 ) by applying a voltage to one or more of the plurality of pull-down electrodes ( 104 A- 104 C);
moving the MEMS bridge a second distance to contact the additional stopper ( 310 ) by continuing the voltage or by applying a first additional voltage to one or more of the plurality of pull-down electrodes ( 104 A- 104 C); and
moving the MEMS bridge a third distance to contact the RF contact ( 306 ) by continuing the voltage or by applying a second additional voltage to one or more of the plurality of pull-down electrodes ( 104 A- 104 C).

11. The method of claim 10 , wherein once the MEMS bridge has moved the first distance, but before the MEMS bridge has moved the second distance, the MEMS bridge is spaced from the first RF contact ( 306 ) and the additional stopper ( 310 ).

12. The method of claim 10 , wherein once the MEMS bridge has moved the second distance, but before the MEMS bridge has moved the third distance, the MEMS bridge is spaced from the first RF contact ( 306 ).

13. The method of claim 10 , wherein once the MEMS bridge has moved the second distance, the MEMS bridge remains in contact with the center stopper ( 314 ).

14. The method of claim 10 , wherein once the MEMS bridge has moved the third distance, the MEMS bridge remains in contact with the center stopper ( 314 ) and the additional stopper ( 310 ).

Assignees

• Cavendish Kinetics Inc
• Qorvo Us Inc

Inventors

• Knipe Richard L
• Van Kampen Robertus Petrus
• Huffman James Douglas
• Barron Lance

Classifications

• H01H2059/0072

  with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position · CPC title

• H01H2001/0084

  with perpendicular movement of the movable contact relative to the substrate · CPC title

• H01H1/0036

  Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009) · CPC title

• H01H59/0009 Primary

  making use of micromechanics · CPC title

• H01H2001/0057

  the contact materials containing refractory materials, e.g. tungsten · CPC title