Mask blank, phase shift mask, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11415875-B2
Application number	US-202117231282-A
Country	US
Kind code	B2
Filing date	Apr 15, 2021
Priority date	Feb 22, 2018
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

First claim

The invention claimed is:

1. A mask blank comprising:
a transparent substrate; and
a phase shift film containing silicon and nitrogen, and formed on the transparent substrate,
wherein the phase shift film is a single-layer film having a composition gradient portion,
wherein the composition gradient portion is formed on a surface of the phase shift film on the side opposite from the transparent substrate and in a region adjacent to the surface,
wherein the composition gradient portion is increased in oxygen content,
wherein, when the phase shift film is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of an Si2p narrow spectrum in the phase shift film and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of an Si2p narrow spectrum in the transparent substrate, a numerical value (PSi_f)/(PSi_s) is 1.09 or less where the numerical value is obtained by dividing the maximum peak PSi_f in the phase shift film by the maximum peak PSi_s in the transparent substrate.

2. The mask blank according to claim 1 , wherein a region of the phase shift film other than the composition gradient portion has a nitrogen content of 50 atomic % or more.

3. The mask blank according to claim 1 , wherein a region of the phase shift film other than the composition gradient portion has a silicon content of 35 atomic % or more.

4. The mask blank according to claim 1 , wherein a region of the phase shift film other than the composition gradient portion has an oxygen content of 10 atomic % or less.

5. The mask blank according to claim 1 , wherein the maximum peak of photoelectron intensity in the Si2p narrow spectrum is the maximum peak at a bond energy within a range of 96 [eV] or more and 106 [eV] or less.

6. The mask blank according to claim 1 , wherein the X-ray photoelectron spectroscopy to which the phase shift film is subjected is carried out using AlKα X-rays.

7. The mask blank according to claim 1 , wherein a ratio of the proportion of Si 3 N 4 bonds that exist in an area of the phase shift film other than the composition gradient portion to a total proportion of Si 3 N 4 bonds, Si a N b bonds (where b/[a+b]<4/7), Si—O bonds, and Si—ON bonds that exist in the area of the phase shift film other than the composition gradient portion is 0.88 or more.

8. The mask blank according to claim 1 , wherein a transmittance of the phase shift film with respect to exposure light of an ArF excimer laser is 10% or more; and
the phase shift film is configured to transmit the exposure light so that transmitted light has a phase difference of 150 degrees or more and 200 degrees or less with respect to the exposure light transmitted through air for a same distance as a thickness of the phase shift film.

9. The mask blank according to claim 1 , comprising a light shielding film formed on the phase shift film.

10. A phase shift mask comprising:
a transparent substrate; and
a phase shift film with a transfer pattern containing silicon and nitrogen, and formed on the transparent substrate,
wherein the phase shift film is a single-layer film having a composition gradient portion,
wherein the composition gradient portion is formed on a surface of the phase shift film on the side opposite from the transparent substrate and in a region adjacent to the surface,
wherein the composition gradient portion is increased in oxygen content,
wherein, when the phase shift film is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of an Si2p narrow spectrum in the phase shift film and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of an Si2p narrow spectrum in the transparent substrate, a numerical value (PSi_f)/(PSi_s) is 1.09 or less where the numerical value is obtained by dividing the maximum peak PSi_f in the phase shift film by the maximum peak PSi_s in the transparent substrate.

11. The phase shift mask according to claim 10 , wherein the phase shift film other than the composition gradient portion has a nitrogen content of 50 atomic % or more.

12. The phase shift mask according to claim 10 , wherein the phase shift film other than the composition gradient portion has a silicon content of 35 atomic % or more.

13. The phase shift mask according to claim 10 , wherein the phase shift film other than the composition gradient portion has an oxygen content of 10 atomic % or less.

14. The phase shift mask according to claim 10 , wherein the maximum peak of photoelectron intensity in the Si2p narrow spectrum is the maximum peak at a bond energy within a range of 96 [eV] or more and 106 [eV] or less.

15. The phase shift mask according to claim 10 , wherein the X-ray photoelectron spectroscopy to which the phase shift film is subjected is carried out using AlKα X-rays.

16. The phase shift mask according to claim 10 , wherein a ratio of the proportion of Si 3 N 4 bonds that exist in an area of the phase shift film other than the composition gradient portion to a total proportion of Si 3 N 4 bonds, Si a N b bonds (where b/[a+b]<4/7), Si—O bonds, and Si—ON bonds that exist in the area of the phase shift film other than the composition gradient portion is 0.88 or more.

17. The phase shift mask according to claim 10 , wherein a transmittance of the phase shift film with respect to exposure light of an ArF excimer laser is 10% or more; and
the phase shift film is configured to transmit the exposure light so that transmitted light has a phase difference of 150 degrees or more and 200 degrees or less with respect to the exposure light transmitted through air for a same distance as a thickness of the phase shift film.

18. The phase shift mask according to claim 10 , comprising a light shielding film formed on the phase shift film and provided with a light shielding pattern.

19. A method of manufacturing a semiconductor device, comprising using the phase shift mask according to claim 10 to exposure-transfer a transfer pattern to a resist film on a semiconductor substrate.

Assignees

• Hoya Corp

Inventors

• Maeda Hitoshi
• Ohkubo Ryo
• Horigome Yasutaka

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F1/38

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F1/26 Primary

  Phase shift masks [PSM]; PSM blanks; Preparation thereof · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title