Low resistance microfabricated filter

US11413383B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11413383-B2
Application numberUS-202017092616-A
CountryUS
Kind codeB2
Filing dateNov 9, 2020
Priority dateMay 16, 2012
Publication dateAug 16, 2022
Grant dateAug 16, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present technology provides micro fabricated filtration devices, methods of making such devices, and uses for microfabricated filtration devices. The devices may allow diffusion to occur between two fluids with improved transport resistance characteristics as compared to conventional filtration devices. The devices may include a compound structure that includes a porous membrane overlying a support structure. The support structure may define a cavity and a plurality of recesses formed in a way that can allow modified convective flow of a first fluid to provide improved diffusive transport between the first fluid and a second fluid through the membrane.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of making a microfabricated filtration device, the method comprising: depositing a dielectric layer over a semiconductor substrate; forming a first layer of a membrane material on the dielectric layer and etching a pattern in the first membrane material layer; forming a sacrificial dielectric layer over the patterned first membrane material layer and forming a second membrane material layer over the sacrificial dielectric layer; forming a protective layer over the second membrane material layer; etching the substrate with a first etchant process that produces a cavity that does not extend to the layers of membrane material; etching the substrate with a second etchant process that forms a plurality of recesses through the remaining portion of the substrate and through the dielectric layer; and etching the filtration device with a third etchant process that removes the sacrificial dielectric layer forming pores through the membrane material layers, which provides access to the recesses such that the combination of the pores, recesses, and the cavity produce apertures through the filtration device. 2. The method of claim 1 , wherein the first etchant process comprises a wet etchant. 3. The method of claim 2 , wherein the first etchant process is anisotropic. 4. The method of claim 2 , wherein the first etchant process is isotropic. 5. The method of claim 1 , wherein the first and second etchant processes comprise a reactive ion etch. 6. The method of claim 1 , wherein the membrane material comprises silicon or polysilicon membrane. 7. The method of claim 6 , wherein the pores have a width of less than 100 nm. 8. The method of claim 6 , wherein the pores have a width of less than 10 nm. 9. The method of claim 7 , wherein the plurality of recesses are rectangular and repeat along a width of the cavity and along a length of the cavity, the plurality of recesses each comprising a length of 500 μm or less. 10. The method of claim 8 , wherein the plurality of recesses comprise length by width measurements of 100 μm by 50 μm. 11. The method of claim 8 , wherein the plurality of recesses comprise length by width measurements of 250 μm by 50 μm. 12. The method of claim 1 , wherein the pores have a width of less than 100 nm. 13. The method of claim 1 , wherein the pores have a width of less than 10 nm. 14. The method of claim 1 , wherein the plurality of recesses are rectangular and repeat along a width of the cavity and along a length of the cavity, the plurality of recesses each comprising a length of 500 μm or less. 15. The method of claim 1 , wherein the plurality of recesses comprise length by width measurements of 100 μm by 50 μm. 16. The method of claim 1 , wherein the plurality of recesses comprise length by width measurements of 250 μm by 50 μm. 17. The method of claim 1 , wherein the protective layer comprises silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide.

Assignees

Inventors

Classifications

  • Other shaped material, e.g. perforated or porous sheets · CPC title

  • Nanofiltration · CPC title

  • by selective elimination of components, e.g. by leaching · CPC title

  • Electrical properties · CPC title

  • Batch-systems · CPC title

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Frequently asked questions

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What does patent US11413383B2 cover?
The present technology provides micro fabricated filtration devices, methods of making such devices, and uses for microfabricated filtration devices. The devices may allow diffusion to occur between two fluids with improved transport resistance characteristics as compared to conventional filtration devices. The devices may include a compound structure that includes a porous membrane overlying a…
Who is the assignee on this patent?
Univ California
What technology area does this patent fall under?
Primary CPC classification B01D39/1692. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Aug 16 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).