Semiconductor power module to protect against short circuit event
US-10304788-B1 · May 28, 2019 · US
US11410914B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11410914-B2 |
| Application number | US-202016926008-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 10, 2020 |
| Priority date | Sep 24, 2019 |
| Publication date | Aug 9, 2022 |
| Grant date | Aug 9, 2022 |
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A power module includes: a base plate having a first surface; electrode plate provided at the first surface; a wire connected to a semiconductor chip and the electrode plate; a metal member connected to the electrode plate; a terminal plate; a first resin layer, a connection portion of the wire and the semiconductor chip being disposed inside the first resin layer; and a second resin layer provided on the first resin layer and having a lower elastic modulus than the first resin layer. The terminal plate includes a bonding portion contacting an upper surface of the metal member, a curved portion curved upward from the bonding portion. The curved portion is disposed inside the second resin layer, and a length from the first surface of a lower surface of the bonding portion is greater than a length from the first surface of the connection portion.
Opening claim text (preview).
What is claimed is: 1. A power module, comprising: a base plate having a first surface; a plurality of electrode plates provided at the first surface; a semiconductor chip provided on the first surface; a wire connected to the semiconductor chip and one of the electrode plates; a metal member connected to one of the electrode plates; a terminal plate including a bonding portion, a curved portion, a first intermediate portion, a second intermediate portion, and a draw-out portion, the terminal plate being formed by stamping and bending a copper plate, the bonding portion contacting an upper surface of the metal member and extending along the upper surface, the curved portion being curved upward from the bonding portion, the first intermediate portion extending upward in a vertical direction from the curved portion, the second intermediate portion extending along the first surface of the base plate from the first intermediate portion, the draw-out portion being drawn out externally from the second intermediate portion; a first resin layer, a connection portion of the wire and the semiconductor chip being disposed inside the first resin layer; and a second resin layer provided on the first resin layer, the curved portion being disposed inside the second resin layer, an elastic modulus of the second resin layer being less than an elastic modulus of the first resin layer, a length from the first surface to a lower surface of the bonding portion being greater than a length from the first surface to the connection portion, wherein a wedge-like gap is formed between the lower surface of the curved portion of the terminal plate and the upper surface of the metal member, and the second resin layer enters the wedge-like gap. 2. The module according to claim 1 , wherein an upper surface of the first resin layer is positioned higher than the connection portion and positioned lower than the bonding portion. 3. The module according to claim 1 , further comprising a bonding member contacting the metal member and the one of the electrode plates. 4. The module according to claim 1 , wherein a thermal expansion coefficient of the first resin layer is less than a thermal expansion coefficient of the second resin layer. 5. The module according to claim 1 , wherein the first resin layer includes an epoxy resin. 6. The module according to claim 1 , wherein the second resin layer is a gel. 7. The module according to claim 1 , wherein the bonding portion of the terminal plate is bonded to the upper surface of the metal member by ultrasonic bonding. 8. The module according to claim 1 , wherein the wire is formed of aluminum. 9. The module according to claim 1 , further comprising a connection effect portion that has reduced bendability, and formed at an end portion of the wire at the connection effect portion side by connecting the connection portion and the semiconductor chip, and the length from the first surface to the lower surface of the bonding portion is greater than a length from the first surface to an upper end of the connection effect portion. 10. The module according to claim 9 , wherein an upper surface of the first resin layer is positioned higher than an upper end of the connection effect portion.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
using a polymer adhesive, e.g. an adhesive based on silicone or epoxy · CPC title
Die-attach connectors and bond wires · CPC title
Package configurations · CPC title
by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title
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