Hardmask composition, hardmask layer and method of forming patterns

Patent metadata

Field	Value
Publication number	US-11409197-B2
Application number	US-201916722720-A
Country	US
Kind code	B2
Filing date	Dec 20, 2019
Priority date	Dec 21, 2018
Publication date	Aug 9, 2022
Grant date	Aug 9, 2022

Abstract

A hardmask composition, a hardmask layer, and a method of forming patterns, the composition including a solvent; and a compound represented by Chemical Formula 1,

wherein, in Chemical Formula 1, A is a C6 to C30 aromatic moiety, n is an integer of 2 or more, and each B is independently a group represented by Chemical Formula 2,

First claim

What is claimed is:

1. A hardmask composition, comprising:
a solvent; and
a compound represented by Chemical Formula 1,

wherein, in Chemical Formula 1,
A is a C6 to C30 aromatic moiety,
n is an integer of 2 or more, and
each B is independently a group represented by Chemical Formula 2,

wherein, in Chemical Formula 2,

is a linking point with A in Chemical Formula 1, and
R 1 to R 5 are each independently hydrogen, a substituted or unsubstituted aryl group of Group 2, or an unsubstituted heteroaryl group of Group 3, in which the substituted or unsubstituted aryl groups of Group 2 are separate or an adjacent two thereof are linked with each other to form a ring and the unsubstituted heteroaryl groups of Group 3 are separate, at least one of R 1 to R 5 being a substituted or unsubstituted aryl group of Group 2 or an unsubstituted heteroaryl group of Group 3:

wherein, in Group 2 and Group 3,

is a linking point.

2. The hardmask composition as claimed in claim 1 , wherein A is a benzene moiety, a naphthalene moiety, an anthracene moiety, a tetracene moiety, a pentacene moiety, a biphenyl moiety, a terphenyl moiety, a quaterphenyl moiety, a quinquephenyl moiety, a phenanthrene moiety, a pyrene moiety, a fluoranthene moiety, a benzophenanthrene moiety, a chrysene moiety, a perylene moiety, a benzopyrene moiety, a picene moiety, a benzofluoranthene moiety, a dibenzofluoranthene moiety, a benzoperylene moiety, a coronene moiety, a naphthoanthracene moiety, or a triphenylene moiety.

3. The hardmask composition as claimed in claim 1 , wherein A is a moiety of a compound of Group 1:

4. The hardmask composition as claimed in claim 1 , wherein at least one of R 1 to R 5 is:
an unsubstituted heteroaryl group of Group 3; or
an aryl group of Group 2 substituted with a hydroxy group, an amino group, a mercapto group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthiol group, or a substituted or unsubstituted C1 to C20 alkylamino group.

5. The hardmask composition as claimed in claim 1 , wherein the group represented by Chemical Formula 2 is represented by one of Chemical Formulae 3-1 to 3-5:

wherein, in Chemical Formulae 3-1 to 3-5,
R a to R e are each independently hydrogen, a hydroxy group, an amino group, a mercapto group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthiol group, or a substituted or unsubstituted C1 to C20 alkylamino group,
at least one of R a to R e is a hydroxy group, an amino group, a mercapto group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C1 to C30 alkylthiol group, or a substituted or unsubstituted C1 to C20 alkylamino group,
HAr is an unsubstituted heteroaryl group of Group 3,
m is 0 or 1, and

is a linking point with A in Chemical Formula 1.

6. The hardmask composition as claimed in claim 1 , wherein n is an integer satisfying 2≤n≤k/2, in which k is a number of substitutable positions of A in Chemical Formula 1.

7. The hardmask composition as claimed in claim 1 , wherein the compound represented by Chemical Formula 1 is represented by one of Chemical Formulae 4-1 to 4-4:

wherein, in Chemical Formula 4-1 to Chemical Formula 4-4, B 1 to B 11 are each independently a group represented by Chemical Formula 2.

8. A hardmask layer comprising a cured product of the hardmask composition as claimed in claim 1 .

9. The hardmask layer as claimed in claim 8 , wherein the cured product includes a condensed polycyclic aromatic hydrocarbon.

10. A method of forming patterns, the method comprising:
applying the hardmask composition as claimed in claim 1 on a material layer and heat- treating the resultant to form a hardmask layer;
forming a photoresist layer on the hardmask layer;
exposing and developing the photoresist layer to form a photoresist pattern;
selectively removing the hardmask layer using the photoresist pattern to expose a portion of the material layer; and
etching an exposed portion of the material layer.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Lim Jaebum
• Kim Sunghwan
• Kim Seunghyun
• Kim Taeho
• Park Yushin
• Yang Sunyoung

Classifications

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/162

  Coating on a rotating support, e.g. using a whirler or a spinner · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/09

  characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title