Backside binary grated lens coupled to front side waveguide

US11409046B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11409046-B2
Application numberUS-202016739418-A
CountryUS
Kind codeB2
Filing dateJan 10, 2020
Priority dateJun 30, 2015
Publication dateAug 9, 2022
Grant dateAug 9, 2022

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A wafer structure includes a diffractive lens disposed on a backside of a wafer and coupled to a front side waveguide, the diffractive lens being configured to receive light and focus the light to the front side waveguide.

First claim

Opening claim text (preview).

What is claimed: 1. A method comprising: forming a waveguide to a front side of a semiconductor wafer; forming an insulator layer on a backside of the semiconductor wafer; etching a plurality of trenches through the insulator layer; and forming segments by filling the plurality of trenches with material, wherein each of the segments extends from a first surface of the insulator layer to a second surface of the insulator layer, wherein the insulator layer and the segments constitute a diffractive lens configured to receive light and focus the light to the waveguide connected to the front side of the semiconductor wafer. 2. The method of claim 1 , wherein the material has a substantially different index of refraction than the insulator layer. 3. The method of claim 1 , wherein the plurality of trenches are filled with a silicon nitride material. 4. The method of claim 1 , further comprising providing a coupler including a polysilicon material and connecting the waveguide to the semiconductor wafer, wherein the coupler receives light redirected by the insulator layer and the material filled in the trenches. 5. The method of claim 4 , wherein the coupler includes a polysilicon material. 6. The method of claim 1 , wherein the light is received by the lens from an optical fiber. 7. The method of claim 1 , wherein the diffractive lens is a binary diffractive lens. 8. The method of claim 1 , wherein the trenches that each extend from the first surface of the insulator layer to the second surface of the insulator layer, the second surface of the insulator layer contacting the backside of the semiconductor wafer. 9. The method of claim 8 , wherein each of the segments comprises an insulator material with a surface that is co-planar with the first surface of the insulator layer. 10. The method of claim 1 , wherein each of the segments comprises an insulator material with a surface that is co-planar with the first surface of the insulator layer. 11. The method of claim 1 , wherein the diffractive lens is formed on a backside of the semiconductor wafer and coupled to the frontside of the semiconductor wafer. 12. The method of claim 11 , wherein the trenches each extend from the first surface of the insulator layer to the second surface of the insulator layer, and the second surface of the insulator layer contacting the backside of the semiconductor wafer. 13. The method of claim 12 , wherein the material of the segments comprises insulator material with a surface that is co-planar with the first surface of the insulator layer. 14. The method of claim 13 , wherein the insulator material is different than the insulator layer. 15. The method of claim 14 , further comprising planarizing the insulator material so that the insulator material is co-planar with the first surface of the insulator layer. 16. The method of claim 15 , wherein the diffractive lens comprises a binary diffractive grated lens having a diffraction grating that redirects light to the frontside of the semiconductor wafer. 17. The method of claim 15 , further comprising forming a coupler on the frontside of the semiconductor wafer, the forming of the coupler comprising forming polysilicon material covered with an oxide material over the semiconductor wafer, the coupler being coupled to the waveguide and extending on a semiconductor on insulator layer formed on the frontside of the semiconductor wafer. 18. The method of claim 1 , wherein a width of each of the segments and a distance between each of the segments vary across the diffractive lens. 19. The method of claim 18 , wherein the segments are formed as concentric circles when viewed from a top.

Assignees

Inventors

Classifications

  • for use between fibre and thin-film device · CPC title

  • G02B6/32Primary

    having lens focusing means {positioned between opposed fibre ends (with lens being an integral part of the single fibre end G02B6/262)} · CPC title

  • operating by diffraction, e.g. grating (G02B6/29301 takes precedence; spectrometers using gratings G01J3/18) · CPC title

  • utilising prism or grating {(G02B6/293 takes precedence)} · CPC title

  • and having an integrated mode-size expanding section, e.g. tapered waveguide · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US11409046B2 cover?
A wafer structure includes a diffractive lens disposed on a backside of a wafer and coupled to a front side waveguide, the diffractive lens being configured to receive light and focus the light to the front side waveguide.
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification G02B6/32. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Aug 09 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).