Semiconductor device
US-2019228978-A1 · Jul 25, 2019 · US
US11407641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11407641-B2 |
| Application number | US-202016895170-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 8, 2020 |
| Priority date | Jun 8, 2020 |
| Publication date | Aug 9, 2022 |
| Grant date | Aug 9, 2022 |
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A method of preparing graphdiyne-based material and a substrate for use in such material preparation process. The method includes the steps of: disposing an alkynye-based monomer on a substrate; maintaining a planar structure of each of a plurality of molecules of the monomer on a surface of the substrate; and initiating polymerization of the monomer on the substrate to synthesize a two-dimensional crystalline layer of the graphdiyne-based material on the substrate.
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The invention claimed is: 1. A method of preparing a graphdiyne-based material comprising the steps of: disposing an alkynye-based monomer on a substrate; maintaining a planar structure of each of a plurality of molecules of the monomer on a surface of the substrate; and initiating polymerization of the monomer on the substrate to synthesize a two-dimensional crystalline layer of the graphdiyne-based material on the substrate. 2. The method of preparing a graphdiyne-based material according to claim 1 , wherein the substrate is arranged to reduce chemisorption between each of the plurality of molecules of the monomer and the surface of the substrate. 3. The method of preparing a graphdiyne-based material according to claim 2 , wherein the reduction of chemisorption causes an increase in monomer-substrate distance, thereby preventing configuration distortion of each of the plurality of molecules of the monomer. 4. The method of preparing a graphdiyne-based material according to claim 1 , wherein the alkynye-based monomer comprising a structure of Formula (I): wherein R 1 -R 6 are independently selected from hydrogen, a trimethylsilyl group, or a halogen. 5. The method of preparing a graphdiyne-based material according to claim 1 , wherein the alkynye-based monomer including the structure of Formula (I), and wherein R 1 -R 3 are identical and being H, SiMe 3 , Cl, Br, or I; and wherein R 4 -R 6 are identical and being H, C≡CSiMe 3 , Cl, Br, or I. 6. The method of preparing a graphdiyne-based material according to claim 1 , wherein the alkynye-based monomer including the structure of Formula (I), and wherein R 1 -R 6 are identical and being H. 7. The method of preparing a graphdiyne-based material according to claim 1 , further comprising the step of disposing a polymerization catalyst on the substrate, prior to the step of disposing the alkynye-based monomer on the substrate. 8. The method of preparing a graphdiyne-based material according to claim 7 , wherein the step of disposing a polymerization catalyst including the step of dissolving the polymerization catalyst in a solvent mixture. 9. The method of preparing a graphdiyne-based material according to claim 7 , wherein the polymerization catalyst includes PdCl 2 (PPh 3 ) 2 and CuI. 10. The method of preparing a graphdiyne-based material according to claim 8 , wherein the solvent mixture includes tetrahydrofuran and trimethylamine at a volume ratio of 1:1. 11. The method of preparing a graphdiyne-based material according to claim 1 , wherein the substrate is a zinc-based material. 12. The method of preparing a graphdiyne-based material according to claim 11 , wherein the zinc-based material includes zinc plate and zinc powder.
Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 · CPC title
Two-dimensional structures · CPC title
with zinc, cadmium or mercury · CPC title
Carbon · CPC title
with platinum group metals · CPC title
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